TPC6901 [TOSHIBA]
TRANSISTOR 1000 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-3T1A, 6 PIN, BIP General Purpose Small Signal;
| 型号： | TPC6901 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 1000 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-3T1A, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6901
TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type
TPC6901
High-Speed Switching Applications
Unit: mm
MOS Gate Drive Applications
•
•
•
NPN and PNP transistors are mounted on a compact and slim
package.
High DC current gain: NPN h
= 400 to 1000
= 200 to 500
FE
: PNP h
FE
Low collector-emitter saturation voltage
: NPN V
: PNP V
= 0.17 V (max)
= 0.23 V (max)
CE (sat)
CE (sat)
•
High-speed switching: NPN t = 85 ns (typ.)
f
: PNP t = 70 ns (typ.)
f
Maximum Ratings
=
(Ta 25°C)
Rating
Characteristics
Symbol
Unit
NPN
100
80
PNP
50
Collector-base voltage
V
−
V
V
V
V
A
A
A
CBO
V
−50
50
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
CEX
CEO
EBO
JEDEC
JEITA
―
―
V
V
50
−
7
−7
TOSHIBA
2-3T1A
I
1.0
2.0
0.1
0.7
DC (Note 1)
C
Collector current
Weight: 0.011 g (typ.)
I
−2.0
−0.1
Pulse (Note 1)
CP
Base current
I
B
Collector power
dissipation (t=10 s)
(Note 2)
Single-device
operation
P (1)
500
400
330
mW
C
Single-device
operation
P (2)
C
Collector power
dissipation (DC)
(Note 2)
mW
Single-device
value at dual
operation
P (3)
C
Thermal resistance,
junction to ambient
(t=10 s) (Note 2)
Single-device
operation
R
R
R
(1)
250
312
°C/W
°C/W
th (j-a)
th (j-a)
th (j-a)
Single-device
operation
(2)
(3)
Thermal resistance,
junction to ambient
(DC) (Note 2)
Single-device
value at dual
operation
378
150
Junction temperature
T
j
°C
°C
Storage temperature range
T
stg
−55 to 150
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
1
2004-07-07
TPC6901
Circuit Configuration
Marking
Lot No.
6
5
4
Lot code (month)
Part No.
(or abbreviation code)
H6A
Product-specific code
Pin #1
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2
3
Electrical Characteristics (Ta = 25°C) : NPN
Characteristics
Collector cut-off current
Symbol
Test Condition
= 100 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
100
100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
= 7 V, I = 0
C
EBO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
50
400
200
⎯
(BR) CEO
C
B
h
(1)
(2)
V
V
= 2 V, I = 0.1 A
1000
⎯
FE
FE
CE
CE
C
DC current gain
h
= 2 V, I = 0.3 A
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 300 mA, I = 6 mA
0.17
1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= 300 mA, I = 6 mA
⎯
B
C
ob
V
= 10 V, I = 0, f = 1 MHz
⎯
pF
CB
E
t
⎯
35
680
85
⎯
See Figure 1 circuit diagram.
r
Switching time
V
I
≈ 30 V, R = 100 Ω
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
= −I = 10 mA
t
f
⎯
⎯
B1
B2
Electrical Characteristics (Ta = 25°C) : PNP
Characteristics
Collector cut-off current
Symbol
Test Condition
= −50 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
−100
−100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
= −7 V, I = 0
C
EBO
Collector-emitter breakdown voltage
V
I
= −10 mA, I = 0
−50
200
125
⎯
(BR) CEO
C
B
h
h
(1)
(2)
V
V
= −2 V, I = −0.1 A
500
⎯
FE
CE
CE
C
DC current gain
= −2 V, I = −0.3 A
FE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= −300 mA, I = −10 mA
0.23
1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= −300 mA, I = −10 mA
⎯
B
C
ob
V
= −10 V, I = 0, f = 1 MHz
⎯
pF
CB
E
t
⎯
60
280
70
⎯
See Figure 1 circuit diagram.
r
Switching time
V
I
≈ 30 V, R = 100 Ω
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
= −I = −10 mA
t
f
⎯
⎯
B1
B2
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2004-07-07
TPC6901
V
CC
V
CC
20 µs
I
B2
I
I
I
I
I
I
B1
B1
B2
B2
B1
Output
Output
B1
Input
Input
I
B2
20 µs
Duty cycle < 1%
Duty cycle < 1%
Figure 3 Switching Time Test Circuit & Figure 4 Switching Time Test Circuit &
Timing Chart (NPN) Timing Chart (PNP)
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2004-07-07
TPC6901
NPN
I
– V
h – I
FE C
C
CE
1.0
0.8
0.6
0.4
0.2
0
10000
10
8
15
20
Ta = 100°C
6
4
1000
100
25°C
−55°C
2
I
= 1 mA
B
10
1
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0.001
0.01
0.1
1
0
0.2
0.4
0.6
0.8 1.0 1.2
Collector current
I
C
(A)
Collector−emitter voltage
V
CE
(V)
V
– I
C
V
– I
CE (sat)
BE (sat) C
1
10
Common emitter
= 50
Single nonrepetitive pulse
Common emitter
= 50
Single nonrepetitive pulse
β
β
Ta = −55°C
0.1
1
25°C
Ta = 100°C
100°C
−55°C
25°C
0.01
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
Collector current
I
C
(A)
Collector current
I
C
(A)
Safe Operation Area
10
10 ms* 1 ms*
100 µs*
I
I
max (Pulsed)*
10 µs*
C
I
– V
BE
C
100 ms*
1.0
0.8
max (Continuous)*
C
Common emitter
1
VCE = 2 V
Single nonrepetitive pulse
10 s*
DC operation
Ta = 25°C
−55°C
Ta = 100°C
0.1
0.6
0.4
0.2
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2).
25°C
0.01
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
V
CEO
max
0
0
0.001
0.2
0.4
0.6
0.8
1.0
BE
1.2
0.1
1
10
100
Base−emitter saturation voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
4
2004-07-07
TPC6901
PNP
I
– V
h – I
FE C
C
CE
−1.0
−0.8
−0.6
10000
Common emitter
= −2 V
−100
−50
−40
−30
V
CE
Single nonrepetitive pulse
−20
−15
1000
100
Ta = 100°C
−10
−5
25°C
−55°C
−0.4
−0.2
0
−2
I
= −1 mA
B
10
1
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0.001
0.01
0.1
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Collector current −I
(A)
C
Collector−emitter voltage
V
CE
(V)
V
– I
C
V
– I
CE (sat)
BE (sat) C
10
1
10
Common emitter
Common emitter
β = 30
β = 30
Single nonrepetitive pulse
Single nonrepetitive pulse
Ta = −55°C
0.1
0.01
1
Ta = 100°C
−55°C
100°C
25°C
25°C
0.001
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
Collector current −I
(A)
Collector current −I
(A)
C
C
Safe operation area
10
1 ms* 100 µs* 10 µs*
10 ms*
I
C
max (Pulse)*
I
– V
BE
C
−1.0
−0.8
−0.6
−0.4
−0.2
0
1
I
max (Continuous)*
C
100 ms*
Common emitter
= −2 V
V
CE
10 s*
Single nonrepetitive pulse
DC operation
Ta = 25°C
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2).
Ta = 100°C
−55°C
25°C
0.01
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
V
max
CEO
0.001
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
0.1
1
10
100
Base−emitter saturation voltage
V
BE
(V)
Collector−emitter voltage
V
CE
(V)
5
2004-07-07
TPC6901
Common
r
– t
w
th
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Permissible Power Dissipation for
Simultaneous Operation
0.5
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm2)
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
Permissible power dissipation for Q1
PC (W)
Collector power dissipation at the single-device
operation is 0.4W.
Collector power dissipation at the single-device value at
dual operation is 0.33W.
Collector power dissipation at the dual operation is set
to 0.66W.
6
2004-07-07
TPC6901
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
7
2004-07-07
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