TPC6D03 [TOSHIBA]
High-Speed Switching Applications; 高速开关应用
| 型号： | TPC6D03 |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications |
| 文件： | 总7页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6D03
TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode
TPC6D03
High-Speed Switching Applications
DC-DC Converter Applications
Unit: mm
•
A PNP transistor and a Schottky barrier diode are mounted on a
compact and slim package.
Maximum Ratings
Transistor (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage
Emitter-base voltage
V
V
V
V
−20
−20
V
V
CBO
CEO
ECO
EBO
−9.5
−9.5
−1.2
−2.0
−120
V
V
DC
Collector current
Pulse
I
A
C
I
A
CP
Base current
I
B
mA
Collector power dissipation
(Q1 single-device operation)
P
C
400
150
mW
°C
(Note 1)
Junction temperature
T
j
JEDEC
JEITA
―
―
Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
TOSHIBA
2-3T1F
Repetitive peak reverse voltage
Average forward current
V
30
V
A
RRM
Weight: 0.011 g (typ.)
I
0.7
F (AV)
Peak one cycle surge forward current
(sine wave)
I
7.0
A
FSM
Power dissipation
(D1 single-device operation)
P
D
320
125
mW
°C
(Note 1)
Junction temperature
T
j
Maximum Ratings for Transistor and Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Total power dissipation
(simultaneous operation)
P
T
(Note 2)
600
mW
°C
Storage temperature range
T
stg
−55~150
Thermal Resistance Characteristics
(for transistor and diode)
Characteristics
Symbol
Max
312
Unit
Thermal resistance, junction to
ambient (single-device operation)
R
th (j-a)
(Note 1)
°C/W
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick,
Cu area: 645 mm2)
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Total power dissipation value when two devices are operated at the same time
1
2004-09-02
TPC6D03
Electrical Characteristics (Ta = 25°C)
Transistor
Characteristics
Collector cut-off current
Symbol
Test Condition
= −20 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
⎯
⎯
⎯
⎯
−100
−100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
= −9.5 V, I = 0
C
EBO
Collector-emitter breakdown voltage
V
I
= −10 mA, I = 0
−20
140
85
⎯
⎯
(BR) CEO
C
B
h
h
(1)
(2)
V
V
= −2 V, I = −0.15 A
⎯
350
⎯
FE
CE
CE
C
DC current gain
= −2 V, I = −0.5 A
⎯
FE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
V
I
I
= −0.5 A, I = −16.7 mA
⎯
−0.17
−1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= −0.5 A, I = −16.7 mA
⎯
⎯
B
t
r
⎯
40
135
37
See Figure 1 circuit diagram.
Switching time
V
I
−12 V, R = 24 Ω
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
= −I = −16.7 mA
t
f
⎯
⎯
B1
B2
V
CC
20 µs
I
I
B1
B2
I
Output
B2
Input
I
B1
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Timing Chart
Circuit Configuration Marking
Lot No.
6
5
2
4
Lot code (month)
Q1
D1
Part No.
(or abbreviation code)
H8C
Product-specific code
Pin #1
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
3
Diode
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
V
I
I
I
= 0.5 A
= 0.7 A
= 3 mA
⎯
⎯
30
⎯
⎯
0.35
0.38
40
0.4
0.43
⎯
V
V
FM (1)
FM (2)
F
F
R
Peak forward voltage
Repetitive peak reverse voltage
Repetitive peak reverse current
Junction capacitance
V
V
RRM
I
V
V
= 10 V
25
100
⎯
µA
pF
RRM
R
R
C
j
= 10 V, f = 1 MHz
19
Handling Precaution
Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products.
This current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration during design.
2
2004-09-02
TPC6D03
Transistor
I
– V
h – I
FE C
C
CE
−1.6
1000
100
10
Common emitter
Ta = 25°C
Single
nonrepetitive pulse
−30
−20
Ta = 100°C
−15
25
−1.2
−0.8
−0.4
0
−55
−10
−8
−6
−4
I
B
= −2 mA
Common emitter
= −2 V
V
CE
Single nonrepetitive pulse
0
1
0
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
−0.7
−0.001
−0.01
−0.1
−1
(A)
−10
Collector-emitter voltage
V
(V)
Collector current
I
C
CE
V
– I
C
V
– I
CE (sat)
BE (sat) C
−1
−0.1
−10
Common emitter
/I = 30
Common emitter
/I = 30
I
C
B
I
C
B
Single nonrepetitive pulse
Single nonrepetitive pulse
25
25
−55
−1
Ta = 100°C
−55
−0.01
−0.001
Ta = 100°C
−0.1
−0.001
−0.001
−0.01
−0.1
−1
(A)
−10
−0.01
−0.1
−1
(A)
−10
Collector current
I
C
Collector current
I
C
Safe Operating Area
−10
*: Single nonrepetitive pulse Ta = 25°C
Q1 single-device operation.
I
– V
BE
C
−1.5
−1.2
−0.9
−0.6
−0.3
0
When the device is mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Common emitter
= −2 V
V
CE
I
max (pulsed) *
10 ms* 1 ms*
100 ms*
100 µs*
C
Single nonrepetitive pulse
I
max (continuous)
C
−1
10 s*
DC operation
(Ta = 25°C)
Ta = 100°C
25 −55
−0.1
Note that the curves for 100
ms, 10 s and DC operation will
be different when the devices
aren’t mounted on an FR4
board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm2).
These characteristic curves
must be derated linearly with
increase in temperature.
−0.01
−0.1
0
−0.3
−0.6
−0.9
−1.2
(V)
−1.5
−1
−10
−100
Base-emitter voltage
V
BE
Collector-emitter voltage
V
(V)
CE
3
2004-09-02
TPC6D03
Diode
I
– V
P
– I
F (AV)
F
F
F (AV)
10
0.5
0.4
0.3
0.2
0.1
0
DC
180
1
0.1
120
90
60
125
α = 30°
Rectangular
waveform
Ta = 25°C
0.01
0.001
0°
α 360°
Conduction angle α
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage
V
(V)
Average forward current
I
(A)
F
F (AV)
Ta max – I
C – V
j
(typical)
F (AV)
R
140
120
100
80
100
10
1
Rectangular
waveform
f = 1 MHz
Ta = 25°C
DC
0°
α 360°
I
F (AV)
Conduction angle α
V
R
= 15 V
60
180
40
α = 120°
20
0
0
0.2
0.4
0.6
0.8
1.0
I
1.2
1.4
Average forward current
(A)
1
10
100
F (AV)
Reverse voltage
V
(V)
R
4
2004-09-02
TPC6D03
Diode
Surge forward current (non-repetitive)
I
– T
(typical)
R
j
8
6
4
2
0
100
10
f = 50 Hz
Ta = 25°C
Pulse measurement
(one cell)
30
20
15
10
5
1
0.1
0.01
V
R
= 3 V
1
10
100
0
50
Junction temperature
100
150
Number of cycles
T
j
(°C)
P
– V
(typical)
R (AV)
R
1.2
1.0
0.8
0.6
0.4
0.2
0
Rectangular waveform
360°
0°
DC
300
V
R
α
Conduction angle α
T = 125°C
240
180
j
120
α = 60°
0
10
Reverse voltage
20
30
V
(V)
R
5
2004-09-02
TPC6D03
Transistor and Diode
r
– t
w
th (j-a)
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Either at Q1 or D1 single-operation
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Permissible Power Dissipation for
Simultaneous Operation
0.5
0.4
0.3
0.2
0.1
0
(0.25, 0.35)
DC operation
Ta = 25°C
Mounted on an FR4
board (glass epoxy,
1.6 mm thick,
Cu area: 645 mm2)
0
0.1
0.2
0.3
0.4
0.5
Permissible power dissipation for D1
P
(W)
D
6
2004-09-02
TPC6D03
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
7
2004-09-02
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