TPC6D03(TE85L,F) [TOSHIBA]
MOSFET N-CH 20V, 1.2A, RDSON=OHM;
| 型号： | TPC6D03(TE85L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | MOSFET N-CH 20V, 1.2A, RDSON=OHM |
| 文件： | 总8页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6D03
TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode
TPC6D03
High-Speed Switching Applications
DC-DC Converter Applications
Unit: mm
•
A PNP transistor and a Schottky barrier diode are housed on a compact
and slim package.
Absolute Maximum Ratings
Transistor (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage
Emitter-base voltage
V
V
V
V
−20
−20
V
V
CBO
CEO
ECO
EBO
−9.5
−9.5
−1.2
−2.0
−120
V
V
DC
Collector current
Pulse
I
A
C
I
A
CP
Base current
I
mA
B
Collector power dissipation
(Q1 single-device operation)
P
C
400
150
mW
°C
(Note 1)
Junction temperature
T
j
Diode (Ta = 25°C)
JEDEC
JEITA
―
―
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
V
30
V
A
RRM
TOSHIBA
2-3T1A
I
0.7
F (AV)
Weight: 0.011 g (typ.)
Peak one cycle surge forward current
(sine wave)
I
7.0
A
FSM
Power dissipation
(D1 single-device operation)
P
D
320
125
mW
°C
(Note 1)
Junction temperature
T
j
Transistor and Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Total power dissipation
(simultaneous operation)
P
T
600
mW
°C
(Note 2)
Storage temperature range
T
stg
−55 to 150
Thermal Resistance Characteristics (for transistor and diode)
Characteristics
Symbol
Max
312
Unit
Thermal resistance, junction to
ambient (single-device operation)
R
th (j-a)
(Note 1)
°C/W
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Total power dissipation value when two devices are operated at the same time
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-07-21
TPC6D03
Electrical Characteristics (Ta = 25°C)
Transistor
Characteristics
Collector cut-off current
Symbol
Test Condition
= −20 V, I = 0 A
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
−100
−100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= −9.5 V, I = 0 A
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= −10 mA, I = 0 A
−20
140
85
⎯
⎯
C
B
h
FE
h
FE
(1)
(2)
V
V
= −2 V, I = −0.15 A
⎯
350
⎯
CE
CE
C
DC current gain
⎯
= −2 V, I = −0.5 A
⎯
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
V
I
I
= −0.5 A, I = −16.7 mA
⎯
−0.17
−1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= −0.5 A, I = −16.7 mA
⎯
⎯
B
t
r
⎯
40
135
37
See Figure 1 circuit diagram.
∼
Switching time
V
I
−12 V, R = 24 Ω
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
= −I = −16.7 mA
t
f
⎯
⎯
B1
B2
V
CC
20 μs
I
I
B1
B2
I
Output
B2
Input
I
B1
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Timing Chart
Circuit Configuration Marking
Lot No.
6
5
2
4
Lot code (month)
Q1
D1
Part No.
(or abbreviation code)
H8C
Product-specific code
Pin #1
Lot code
(year)
Note 4
1
3
Note 4: A dot marking identifies the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-07-21
TPC6D03
Diode
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
V
I
I
I
= 0.5 A
= 0.7 A
= 3 mA
⎯
⎯
30
⎯
⎯
0.35
0.38
40
0.4
0.43
⎯
V
V
FM (1)
FM (2)
F
F
R
Peak forward voltage
Repetitive peak reverse voltage
Repetitive peak reverse current
Junction capacitance
V
V
RRM
I
V
V
= 10 V
25
100
⎯
μA
pF
RRM
R
R
C
= 10 V, f = 1 MHz
19
j
Handling Precaution
Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This
current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration during design.
3
2009-07-21
TPC6D03
Transistor
I
– V
h
– I
FE C
C
CE
−1.6
1000
100
10
Common emitter
Ta = 25°C
Single
nonrepetitive pulse
−30
−20
Ta = 100°C
−15
25
−1.2
−0.8
−0.4
0
−55
−10
−8
−6
−4
I
= −2 mA
B
Common emitter
= −2 V
V
CE
Single nonrepetitive pulse
0
1
0
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
−0.7
−0.001
−0.01
−0.1
−1
−10
Collector-emitter voltage
V
(V)
Collector current
I
C
(A)
CE
V
– I
V
– I
BE (sat) C
CE (sat)
C
−1
−0.1
−10
Common emitter
/I = 30
Common emitter
/I = 30
I
C B
I
C B
Single nonrepetitive pulse
Single nonrepetitive pulse
25
25
−55
−1
Ta = 100°C
−55
−0.01
−0.001
Ta = 100°C
−0.1
−0.001
−0.001
−0.01
−0.1
−1
−10
−0.01
−0.1
−1
−10
Collector current
I
C
(A)
Collector current
I
C
(A)
Safe Operating Area
−10
*: Single nonrepetitive pulse Ta = 25°C
Q1 single-device operation.
I
– V
BE
C
−1.5
−1.2
−0.9
−0.6
−0.3
0
When the device is mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Common emitter
= −2 V
V
I
max (pulsed) *
10 ms* 1 ms*
100 ms*
100 μs*
CE
Single nonrepetitive pulse
C
I
max (continuous)
C
−1
10 s*
DC operation
(Ta = 25°C)
Ta = 100°C
25 −55
−0.1
−0.01
Note that the curves for 100
ms, 10 s and DC operation will
be different when the devices
aren’t mounted on an FR4
board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm2).
These characteristic curves
must be derated linearly with
increase in temperature.
0
−0.3
−0.6
−0.9
−1.2
−1.5
−0.1
−1
−10
−100
Base-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
BE
CE
4
2009-07-21
TPC6D03
Diode
I
– V
P
– I
F (AV)
F
F
F (AV)
10
0.5
0.4
0.3
0.2
0.1
0
DC
180
1
0.1
120
90
60
125
α = 30°
Rectangular
waveform
Ta = 25°C
0.01
0.001
0°
α 360°
Conduction angle α
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage
V
(V)
Average forward current
I
(A)
F
F (AV)
Ta max – I
F (AV)
C – V
j
(typical)
R
140
120
100
80
100
10
1
Rectangular
waveform
f = 1 MHz
Ta = 25°C
DC
0°
α 360°
F (AV)
Conduction angle α
I
V
= 15 V
R
60
180
40
α = 120°
20
0
0
0.2
0.4
0.6
0.8
1.0
I
1.2
1.4
Average forward current
(A)
1
10
100
F (AV)
Reverse voltage
V
(V)
R
5
2009-07-21
TPC6D03
Diode
Surge forward current (non-repetitive)
I
– T
(typical)
R
j
8
6
4
2
0
100
10
f = 50 Hz
Ta = 25°C
Pulse measurement
(one cell)
30
20
15
10
5
1
0.1
0.01
V
= 3 V
R
1
10
100
0
50
100
150
Number of cycles
Junction temperature
T
j
(°C)
P
– V
(typical)
R (AV)
R
1.2
1.0
0.8
0.6
0.4
0.2
0
Rectangular waveform
360°
0°
DC
300
V
R
α
Conduction angle α
T = 125°C
240
j
180
120
α = 60°
0
10
20
R
30
Reverse voltage
V
(V)
6
2009-07-21
TPC6D03
Transistor and Diode
r
– t
w
th (j-a)
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Either at Q1 or D1 single-operation
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Permissible Power Dissipation for
Simultaneous Operation
0.5
0.4
0.3
0.2
0.1
0
(0.25, 0.35)
DC operation
Ta = 25°C
Mounted on an FR4
board (glass epoxy,
1.6 mm thick,
Cu area: 645 mm2)
0
0.1
0.2
0.3
0.4
0.5
Permissible power dissipation for D1
P
(W)
D
7
2009-07-21
TPC6D03
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2009-07-21
相关型号：
TPC7.5AHM3/86A
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Transient Suppressor
VISHAY
TPC7.5AHM3/87A
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Transient Suppressor
VISHAY
TPC7.5AHM3_A/H
Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, TO-277A,
VISHAY
TPC7.5AHM3_A/I
Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, TO-277A,
VISHAY
©2020 ICPDF网 联系我们和版权申明