TPC6902(TE85L,F) [TOSHIBA]
TRANSISTOR,BJT,PAIR,COMPLEMENTARY,30V V(BR)CEO,2A I(C),TSOP;型号: | TPC6902(TE85L,F) |
厂家: | TOSHIBA |
描述: | TRANSISTOR,BJT,PAIR,COMPLEMENTARY,30V V(BR)CEO,2A I(C),TSOP |
文件: | 总7页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPC6902
TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
TPC6902
High-Speed Switching Applications
Unit: mm
MOS Gate Drive Applications
NPN and PNP transistors are mounted on a compact and slim package.
High DC current gain
: NPN h = 200 to 500 (I = 0.2 A)
FE C
: PNP h = 200 to 500 (I = -0.2 A)
FE
C
Low collector-emitter saturation voltage
: NPN V
: PNP V
= 0.14 V (max)
= -0.2 V (max)
CE (sat)
CE (sat)
High-speed switching
: NPN t = 45 ns (typ.)
f
: PNP t = 40 ns (typ.)
f
Absolute Maximum Ratings (Ta = 25°C)
Rating
NPN
Characteristics
Collector-base voltage
Symbol
Unit
PNP
- 30
- 30
- 30
- 7
V
60
50
30
7
V
V
V
V
A
A
A
CBO
V
CEX
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
V
V
JEDEC
JEITA
―
―
I
DC
2.0
8.0
0.5
- 1.7
- 8.0
- 0.5
C
Collector current
(Note 1)
I
Pulse
CP
TOSHIBA
2-3T1A
Base current
I
B
Weight: 0.011 g (typ.)
Collector power
dissipation (t=10 s)
(Note 2)
Single-device
operation
P
P
P
1.0
0.7
W
C
C
C
Single-device
operation
Collector power
dissipation (DC)
(Note 2)
W
Single-device
value at dual
operation
0.6
Thermal resistance,
junction to ambient
Single-device
operation
R
R
R
125
178
°C/W
°C/W
th (j-a)
th (j-a)
th (j-a)
(t=10 s)
(Note 2)
Single-device
operation
Thermal resistance,
junction to ambient (DC)
(Note 2)
Single-device
value at dual
operation
208
150
Junction temperature
T
°C
°C
j
Storage temperature range
T
stg
−55 to 150
Note 1: Ensure that the junction temperature does not exceed 150°C.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-10
TPC6902
Figure 1. Circuit configuration (top view)
Figure 2. Marking
Lot No.
Lot code (month)
6
5
4
Part No.
(or abbreviation code)
H6C
Product-specific code
Pin #1
Lot code
(year)
Note 4
1
2
3
Q1
Q2
(NPN) (PNP)
Note 4: A dot marking identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-09-10
TPC6902
Electrical Characteristics (Ta = 25°C) : NPN
Characteristics
Collector cut-off current
Symbol
Test Condition
= 60 V, I = 0
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
100
100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
30
200
125
50
⎯
⎯
C
B
h
FE
h
FE
h
FE
(1)
(2)
(3)
V
V
V
= 2 V, I = 0.2 A
⎯
500
⎯
CE
CE
CE
C
DC current gain
= 2 V, I = 0.6 A
⎯
C
= 2 V, I = 2 A
⎯
⎯
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 0.6 A, I = 20 mA
⎯
0.14
1.1
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= 0.6 A, I = 20 mA
⎯
⎯
B
C
V
= 10 V, I = 0, f = 1 MHz
⎯
14
45
580
45
pF
ob
CB
E
t
⎯
⎯
r
See Figure 1 circuit diagram.
≈ 18 V, R = 30 Ω
Switching time
ns
Storage time
Fall time
t
V
⎯
⎯
stg
CC
L
I
B1
= I = 20 mA
B2
t
f
⎯
⎯
Electrical Characteristics (Ta = 25°C) : PNP
Characteristics
Collector cut-off current
Symbol
Test Condition
= - 30 V, I = 0
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
- 100
- 100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= - 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= - 10 mA, I = 0
-30
200
125
50
⎯
⎯
C
B
h
FE
h
FE
h
FE
(1)
(2)
(3)
V
V
V
= - 2 V, I = - 0.2 A
⎯
500
⎯
CE
CE
CE
C
DC current gain
= - 2 V, I = - 0.6 A
⎯
C
= - 2 V, I = -2A
⎯
⎯
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= - 0.6 A, I = - 20 mA
⎯
- 0.2
- 1.1
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= - 0.6 A, I = - 20 mA
⎯
⎯
B
C
V
= - 10 V, I = 0, f = 1 MHz
⎯
16.5
40
280
40
pF
ob
CB
E
t
⎯
⎯
r
See Figure 2 circuit diagram.
≈ - 18V, R = 30 Ω,
Switching time
ns
Storage time
Fall time
t
V
⎯
⎯
stg
CC
L
I
B1
= I = 20 mA
B2
t
f
⎯
⎯
V
CC
V
CC
20 μs
I
B2
R
L
R
L
0
I
I
B1
Output
B1
I
I
B1
Output
I
B1
Input
0
Input
I
B2
20 μs
Duty cycle < 1%
I
B2
B2
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Figure 2 Switching Time Test Circuit &
Timing Chart (NPN) Timing Chart (PNP)
3
2009-09-10
TPC6902
NPN
I
– V
h
– I
FE C
C
CE
1000
2
1.6
1.2
0.8
0.4
0
30mA
Ta = 100°C
10mA
7mA
5mA
25°C
−25°C
100
3mA
10
I
=1mA
B
Common emitter
= 2 V
V
CE
Common emitter Ta = 25°C
Single pulse test
Single pulse test
1
0.0001
0
2
4
6
8
10
0.001
0.01
0.1
1
10
Collector−emitter voltage
V
(V)
Collector current
I
(A)
CE
C
V
– I
V
– I
BE (sat) C
CE (sat)
C
1
10
Ta = 100°C
Ta = −25°C
25°C
0.1
1
−25°C
100°C
25°C
0.01
0.1
Common emitter
/I = 30
Common emitter
/I = 30
I
I
C
B
C
B
Single pulse test
Single pulse test
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Collector current
I
(A)
Collector current
I
(A)
C
C
Safe operation area
I
– V
BE
C
10
1
10μs*
I
max (Pulse)*
C
2
Common emitter
= 2 V
100μs*
V
I
max (Continuous)
CE
Single pulse test
C
1ms*
1.5
10ms*
−25°C
Ta = 100°C
DC operation
Ta = 25°C
100ms*
10s*
0.1
1
0.5
0
*: Single nonrepetitive pulse
Ta = 25°C
25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm2).
0.01
Single-device operation
These characteristic curves
must be derated linearly with
increase in temperature.
0
0.2
0.4
0.6
0.8
1
1.2
0.001
Base−emitter saturation voltage
V
(V)
0.1
1
10
100
BE
Collector−emitter voltage
V
(V)
CE
4
2009-09-10
TPC6902
PNP
I
– V
h
– I
FE C
C
CE
-2
-1.6
-1.2
-0.8
-0.4
0
1000
-10mA
-30mA
-7mA
-5mA
Ta = 100°C
25°C
−25°C
100
-3mA
10
I
=-1mA
B
Common emitter
= -2 V
V
CE
Single pulse test
Common emitter Ta = 25°C
Single pulse test
1
-0.0001
-0.001
-0.01
-0.1
-1
-10
0
-2
-4
-6
-8
-10
Collector−emitter voltage
V
(V)
Collector current
I
(A)
CE
C
V
– I
V
– I
BE (sat) C
CE (sat)
C
-10
-1
Ta = 100°C
-1
Ta = −25°C
-0.1
25°C
−25°C
100°C
25°C
-0.1
-0.01
Common emitter
/I = 30
Common emitter
/I = 30
I
I
C
C
B
B
Single pulse test
Single pulse test
-0.01
-0.001
-0.001
-0.001
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
Collector current
I
(A)
Collector current
I
(A)
C
C
Safe operation area
I
– V
BE
C
-10
-1
10μs*
-2
I
max (Pulse)*
C
Common emitter
= -2 V
100μs*
V
CE
Single pulse test
I
max (Continuous)
C
1ms*
10ms*
100ms*
-1.5
−25°C
Ta = 100°C
DC operation
Ta = 25°C
-1
-0.1
*: Single nonrepetitive pulse
Ta = 25°C
10s*
25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm2).
-0.5
-0.01
Single-device operation
These characteristic curves
must be derated linearly with
increase in temperature.
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-0.001
-0.1
-1
-10
-100
Base−emitter saturation voltage
V
(V)
BE
Collector−emitter voltage
V
(V)
CE
5
2009-09-10
TPC6902
Common
r
th
– t
w
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645mm2)
Single-device operation
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Permissible Power Dissipation for
Simultaneous Operation
1
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm2)
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
Permissible power dissipation for Q1
PC (W)
Collector power dissipation at the single-device
operation is 0.7W max.
Collector power dissipation at the single-device value at
dual operation is 0.6W max.
Collector power dissipation at the dual operation is set
to 1.2W max.
6
2009-09-10
TPC6902
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2009-09-10
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