TLP719 [TOSHIBA]

TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC; 东芝PHOTOCOUPLER的GaAlAs IRED + PHOTO - IC
TLP719
型号: TLP719
厂家: TOSHIBA    TOSHIBA
描述:

TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC
东芝PHOTOCOUPLER的GaAlAs IRED + PHOTO - IC

文件: 总5页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP719  
TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC  
Preliminary  
TLP719  
DIGITAL LOGIC GROUND ISOLATION.  
Unit in mm  
LINE RECEIVER.  
4.58  
MICROPROCESSOR SYSTEM INTERFACES.  
SWITCHING POWER SUPPLY FEEDBACK CONTROL.  
TRANSISTOR INVERTOR.  
The TOSHIBA TLP719 consists of a GaAlAs high-output light  
emitting diode and a high speed detector.  
7.62±0.25  
This unit is 6-lead SDIP. TLP719 is 50% smaller than 8PIN DIP  
and has suited the safety standard reinforced insulation class.  
So mounting area in safety standard required equipment can be reduced.  
TLP719 has a Faraday shield integrated on the photodetector chip provides  
an effective common mode noise transient immunity.  
1.27  
1.25  
0.4  
So this is suitable for application in noisy environmental condition.  
9.7±0.3  
TOSHIBA  
Weight: ---g  
·
·
·
·
Open Collector  
Package Type  
: SDIP6  
PIN CONFIGURATION (Top view)  
Isolation voltage : 5000 Vrms (Min.)  
Common mode Transient Immunity  
1:ANODE  
2:N.C.  
1
6
: ±10kV/us(Min.) @VCM=400V  
= 0.8µs , t = 0.8µs (Max.)  
·
Switching speed : t  
3:CATHODE  
pHL  
pLH  
5
4
2
3
4:EMITTER(GND)  
5:COLLECTOR(OUTPUT)  
6:VCC  
@ I = 16mA ,VCC = 5V,  
F
R = 1.9kO ,Ta = 25°C  
L
SHIELD  
·
·
TTL Compatible  
Construction Mechanical Rating  
7.62 mm pich  
standard type  
10.16 mm pich  
TLPXXXF type  
Creepage Distance  
Clearance  
Insulation Thickness  
7.0 mm (Min)  
7.0 mm (Min)  
0.4 mm (Min)  
8.0 mm (Min)  
8.0 mm (Min)  
0.4 mm (Min)  
SCHEMATIC  
IF  
1
ICC  
IO  
VCC  
6
VO  
5
VF  
3
GND  
4
SHIELD  
A 0.1µF bypass capacitor must be  
connected between pins 4 and 6.  
1
2003-09-5  
TLP719  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
(Note 1)  
(Note 2)  
I
25  
50  
mA  
mA  
F
Pulse forward current  
I
FP  
Peak transient forward  
current  
I
1
5
A
V
FPT  
(Note 3)  
(Note 4)  
Reverse voltage  
V
P
R
Diode power dissipation  
45  
mW  
D
Junction Temperature  
Output current  
Tj  
125  
8
°C  
mA  
mA  
V
I
O
Peak output current  
I
16  
OP  
Output voltage  
V
O
- 0.5~20  
- 0.5~30  
100  
Supply voltage  
V
CC  
V
Output power dissipation  
Junction Temperature  
Operating temperature range  
Storage temperature range  
Lead solder temperature (10s)  
(Note 5)  
P
O
mW  
°C  
°C  
°C  
°C  
Tj  
125  
T
T
- 55~100  
- 55~125  
260  
opr  
opr  
T
sol  
BV  
Isolation voltage  
(AC, 1min., R.H.= 60%)  
5000  
Vrms  
S
(Note 6)  
(Note 1) Derate 0.45mA / °C above 70°C.  
(Note 2) 50% duty cycle, 1ms pulse width.  
Derate 0.9mA / °C above 70°C.  
(Note 3) Pulse width = 1µs, 300pps.  
(Note 4) Derate 0.8mW / °C above 70°C.  
(Note 5) Derate 1.8mW / °C above 70°C.  
(Note 6) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and  
pins 4, 5 and 6 shorted together.  
2
2003-09-5  
TLP719  
Electrical Characteristics  
(Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Forward voltage  
V
I
I
= 16mA  
= 16mA  
1.65  
- 2  
?
1.85  
?
V
mV / °C  
µA  
F
F
Forward voltage  
Temperature coefficient  
?V / ?Ta  
?
?
F
F
Reverse current  
I
R
V
= 5V  
10  
R
F
Capacitance between  
terminal  
C
V
= 0V , f = 1MHz  
?
?
?
45  
3
?
pF  
nA  
T
I
I
I
I
= 0mA ,V  
= V = 5.5V  
O
500  
5
OH (1)  
OH (2)  
F
CC  
= 0mA ,V  
= 20V  
= 30V  
F
CC  
?
High level output current  
V
O
µA  
I
V
= 0mA ,V  
= 30V  
F
CC  
I
?
?
?
50  
1
OH  
= 20V,Ta = 70°C  
O
High level supply  
voltage  
I
I
F
= 0mA ,V  
CC  
= 30V  
0.01  
µA  
CCH  
Supply voltage  
Output voltage  
V
I
I
= 0.01mA  
30  
20  
?
?
?
?
V
V
CC  
CC  
V
= 0.5mA  
O
O
Coupled Electrical Characteristics  
(Ta = 25°C)  
Characteristic  
Current transfer ratio  
Symbol  
Test Condition  
Min.  
20  
?
Typ.  
?
Max.  
?
Unit  
%
I
V
= 16mA ,V  
= 4.5V  
= 4.5V  
F
O
CC  
I
O
/ I  
F
= 0.4V  
I
= 16mA ,V  
= 2.4mA  
F
CC  
Low level output voltage  
V
OL  
?
0.4  
V
I
O
Isolation Characteristics  
(Ta = 25°C)  
Characteristic  
Capacitance input to output  
Isolation resistance  
Symbol  
Test Condition  
Min.  
?
Typ.  
0.8  
Max.  
Unit  
pF  
O
C
R
V = 0V , f = 1MHz  
(Note 6)  
(Note 6)  
?
?
S
S
12  
14  
R.H. = 60% ,V = 500V  
S
1×10  
10  
AC,1 minute  
5000  
?
?
?
?
V
rms  
Isolation voltage  
BV  
S
AC,1 second , in oil  
DC,1 minute , in oil  
?
?
10000  
10000  
Vdc  
3
2003-09-5  
TLP719  
Switching Characteristics  
(Ta = 25°C, Vcc = 5V)  
Test  
Cir-  
cuit  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
I
R
= 0? 16mA  
F
Propagation delay time  
Propagation delay time  
(H? L)  
(L? H)  
t
t
?
?
?
?
0.8  
0.8  
µs  
µs  
pHL  
= 1.9kO  
L
Fig1  
Fig2  
I
= 16? 0mA  
F
pLH  
R = 1.9kO  
L
Common mode transient  
immunity at logic high output  
I
= 0mA , V  
CM  
= 400V  
p p  
F
-
CM  
10000  
?
?
?
?
V / µs  
V / µs  
H
R = 1.9kO  
(Note 7)  
(Note 7)  
L
Common mode transient  
immunity at logic low output  
I
= 16mA , V = 400V  
CM p p  
-
F
CM  
- 10000  
L
R = 1.9kO  
L
(Note 7) : CM is the maximum rate of fall of the common mode voltage that can be  
L
sustained with the output voltage in the logic low state(V < 0.8V).  
O
CM is the maximum rate of rise of the common mode voltage that can be  
H
sustained with the output voltage in the logic high state(V >2V).  
O
Fig 1.Switching Time Test Circuit  
Vcc=5V  
IF  
1
2
3
6
PULSE INPUT  
(PW=100µs  
I
F  
RL  
tpHL  
tpLH  
Duty=10%)  
5
4
VO  
MONITORING NODE  
Vo  
5V  
0.1µF  
IF MONITORING NODE  
1.5V  
VOL  
Fig 2.Common Mode Noise Immunity Test Circuit.  
Vcc=5V  
1
6
5
4
IF  
400V  
90%  
RL=1.9kΩ  
SW  
A
2
3
B
Vo  
0.1µF  
10%  
0V  
VCM  
VOH  
320 (V)  
tr (µs)  
tr  
tf  
CMH=  
CMH  
SW:B (IF=0mA)  
2V  
320 (V)  
tf (µs)  
CML=-  
-
0.8V  
CML  
+
VOL  
VCM  
SW:A (IF=16mA)  
4
2003-09-5  
TLP719  
RESTRICTIONS ON PRODUCT USE  
020704EBC  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is  
harmful to the human body. Do not break, cut, crushu or dissolve chemically.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2003-09-5  

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