TLP719 [TOSHIBA]
TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC; 东芝PHOTOCOUPLER的GaAlAs IRED + PHOTO - IC型号: | TLP719 |
厂家: | TOSHIBA |
描述: | TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC |
文件: | 总5页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP719
TOSHIBA PHOTOCOUPLER GaAlAs IRED + PHOTO- IC
Preliminary
TLP719
DIGITAL LOGIC GROUND ISOLATION.
Unit in mm
LINE RECEIVER.
4.58
MICROPROCESSOR SYSTEM INTERFACES.
SWITCHING POWER SUPPLY FEEDBACK CONTROL.
TRANSISTOR INVERTOR.
The TOSHIBA TLP719 consists of a GaAlAs high-output light
emitting diode and a high speed detector.
7.62±0.25
This unit is 6-lead SDIP. TLP719 is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP719 has a Faraday shield integrated on the photodetector chip provides
an effective common mode noise transient immunity.
1.27
1.25
0.4
So this is suitable for application in noisy environmental condition.
9.7±0.3
TOSHIBA
Weight: ---g
·
·
·
·
Open Collector
Package Type
: SDIP6
PIN CONFIGURATION (Top view)
Isolation voltage : 5000 Vrms (Min.)
Common mode Transient Immunity
1:ANODE
2:N.C.
1
6
: ±10kV/us(Min.) @VCM=400V
= 0.8µs , t = 0.8µs (Max.)
·
Switching speed : t
3:CATHODE
pHL
pLH
5
4
2
3
4:EMITTER(GND)
5:COLLECTOR(OUTPUT)
6:VCC
@ I = 16mA ,VCC = 5V,
F
R = 1.9kO ,Ta = 25°C
L
SHIELD
·
·
TTL Compatible
Construction Mechanical Rating
7.62 mm pich
standard type
10.16 mm pich
TLPXXXF type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.4 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.4 mm (Min)
SCHEMATIC
IF
1
ICC
IO
VCC
6
VO
5
VF
3
GND
4
SHIELD
A 0.1µF bypass capacitor must be
connected between pins 4 and 6.
1
2003-09-5
TLP719
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
(Note 2)
I
25
50
mA
mA
F
Pulse forward current
I
FP
Peak transient forward
current
I
1
5
A
V
FPT
(Note 3)
(Note 4)
Reverse voltage
V
P
R
Diode power dissipation
45
mW
D
Junction Temperature
Output current
Tj
125
8
°C
mA
mA
V
I
O
Peak output current
I
16
OP
Output voltage
V
O
- 0.5~20
- 0.5~30
100
Supply voltage
V
CC
V
Output power dissipation
Junction Temperature
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
(Note 5)
P
O
mW
°C
°C
°C
°C
Tj
125
T
T
- 55~100
- 55~125
260
opr
opr
T
sol
BV
Isolation voltage
(AC, 1min., R.H.= 60%)
5000
Vrms
S
(Note 6)
(Note 1) Derate 0.45mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 0.9mA / °C above 70°C.
(Note 3) Pulse width = 1µs, 300pps.
(Note 4) Derate 0.8mW / °C above 70°C.
(Note 5) Derate 1.8mW / °C above 70°C.
(Note 6) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and
pins 4, 5 and 6 shorted together.
2
2003-09-5
TLP719
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
I
I
= 16mA
= 16mA
1.65
- 2
?
1.85
?
V
mV / °C
µA
F
F
Forward voltage
Temperature coefficient
?V / ?Ta
?
?
F
F
Reverse current
I
R
V
= 5V
10
R
F
Capacitance between
terminal
C
V
= 0V , f = 1MHz
?
?
?
45
3
?
pF
nA
T
I
I
I
I
= 0mA ,V
= V = 5.5V
O
500
5
OH (1)
OH (2)
F
CC
= 0mA ,V
= 20V
= 30V
F
CC
?
High level output current
V
O
µA
I
V
= 0mA ,V
= 30V
F
CC
I
?
?
?
50
1
OH
= 20V,Ta = 70°C
O
High level supply
voltage
I
I
F
= 0mA ,V
CC
= 30V
0.01
µA
CCH
Supply voltage
Output voltage
V
I
I
= 0.01mA
30
20
?
?
?
?
V
V
CC
CC
V
= 0.5mA
O
O
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
Test Condition
Min.
20
?
Typ.
?
Max.
?
Unit
%
I
V
= 16mA ,V
= 4.5V
= 4.5V
F
O
CC
I
O
/ I
F
= 0.4V
I
= 16mA ,V
= 2.4mA
F
CC
Low level output voltage
V
OL
?
0.4
V
I
O
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
Test Condition
Min.
?
Typ.
0.8
Max.
Unit
pF
O
C
R
V = 0V , f = 1MHz
(Note 6)
(Note 6)
?
?
S
S
12
14
R.H. = 60% ,V = 500V
S
1×10
10
AC,1 minute
5000
?
?
?
?
V
rms
Isolation voltage
BV
S
AC,1 second , in oil
DC,1 minute , in oil
?
?
10000
10000
Vdc
3
2003-09-5
TLP719
Switching Characteristics
(Ta = 25°C, Vcc = 5V)
Test
Cir-
cuit
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
I
R
= 0? 16mA
F
Propagation delay time
Propagation delay time
(H? L)
(L? H)
t
t
?
?
?
?
0.8
0.8
µs
µs
pHL
= 1.9kO
L
Fig1
Fig2
I
= 16? 0mA
F
pLH
R = 1.9kO
L
Common mode transient
immunity at logic high output
I
= 0mA , V
CM
= 400V
p p
F
-
CM
10000
?
?
?
?
V / µs
V / µs
H
R = 1.9kO
(Note 7)
(Note 7)
L
Common mode transient
immunity at logic low output
I
= 16mA , V = 400V
CM p p
-
F
CM
- 10000
L
R = 1.9kO
L
(Note 7) : CM is the maximum rate of fall of the common mode voltage that can be
L
sustained with the output voltage in the logic low state(V < 0.8V).
O
CM is the maximum rate of rise of the common mode voltage that can be
H
sustained with the output voltage in the logic high state(V >2V).
O
Fig 1.Switching Time Test Circuit
Vcc=5V
IF
→
1
2
3
6
PULSE INPUT
(PW=100µs
F
RL
tpHL
tpLH
Duty=10%)
5
4
VO
MONITORING NODE
Vo
5V
0.1µF
IF MONITORING NODE
1.5V
VOL
Fig 2.Common Mode Noise Immunity Test Circuit.
Vcc=5V
1
6
5
4
IF
400V
→
90%
RL=1.9kΩ
SW
A
2
3
B
Vo
0.1µF
10%
0V
VCM
VOH
320 (V)
tr (µs)
tr
tf
CMH=
CMH
SW:B (IF=0mA)
2V
320 (V)
tf (µs)
CML=-
-
0.8V
CML
+
VOL
VCM
SW:A (IF=16mA)
4
2003-09-5
TLP719
RESTRICTIONS ON PRODUCT USE
020704EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is
harmful to the human body. Do not break, cut, crushu or dissolve chemically.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2003-09-5
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