TLP719_07 [TOSHIBA]
Microprocessor system interfaces; 微处理器系统接口
| 型号： | TLP719_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Microprocessor system interfaces |
| 文件： | 总7页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP719
TOSHIBA PHOTOCOUPLER GaAℓAs IRED + PHOTO−IC
TLP719
Unit in mm
Digital logic ground isolation
4.58±0.25
6 5 4
Line receivers
Microprocessor system interfaces
Switching power supply feedback control
Transistor invertors
The TOSHIBA TLP719 consists of a GaAℓAs high-output light-emitting diode and a
high-speed detector.
This unit is a 6-lead SDIP. The TLP719 is 50% smaller than the 8-pin DIP and
meets the reinforced insulation class requirements of international safety standards.
Therefore the mounting area can be reduced in equipment requiring safety standard
certification.
1
2 3
7.62±0.25
The TLP719 has a Faraday shield integrated on the photodetector chip to provide
an effective common mode noise transient immunity. Therefore this product is
suitable for application in noisy environmental conditions.
1.27±0.2
0.4±0.1
1.25±0.25
9.7±0.3
11-5J1
•
•
•
Open collector
Package type
Isolation voltage
TOSHIBA
11-5J1
: SDIP6
Weight：0.26 g (typ.)
: 5000 Vrms (min)
•
•
Common mode transient immunity
Switching speed
: ±10 kV/us(min) @VCM = 400 V
: tpHL/ tpLH = 0.8 μs (max)
@ IF = 16 mA , VCC = 5 V,
RL = 1.9 kΩ , Ta = 25 °C
•
•
TTL compatible
Construction mechanical rating
PIN CONFIGURATION (Top View)
7.62-mm pitch
standard type
10.16-mm pitch
TLPXXXF type
1 : ANODE
1
6
2 : N.C.
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
3 : CATHODE
5
4
2
3
4 : EMITTER (GND)
5 : COLLECTOR (OUTPUT)
•
•
UL recognized
: UL1577, File No. E67349
6 : V
CC
SHIELD
Option (D4)
TÜV approved
: EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 890 Vpk
Highest permissible over voltage : 8000 Vpk
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
SCHEMATIC
IF
ICC
1
VCC
6
IO
VO
5
VF
3
GND
4
SHIELD
A 0.1-μF bypass capacitor must be
connected between pins 4 and 6.
(See Note 7.)
1
2007-10-01
TLP719
Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
(Note 2)
(Note 3)
I
25
50
mA
mA
A
F
Pulse forward current
I
FP
Peak transient forward current
Reverse voltage
I
1
FPT
V
P
5
V
R
D
Diode power dissipation
Junction temperature
(Note 4)
45
mW
°C
T
125
j
Output current
I
8
mA
mA
V
O
Peak output current
I
16
OP
Output voltage
V
−0.5~20
−0.5~30
100
O
Supply voltage
V
V
CC
Output power dissipation
Junction Temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H.≤ 60 %)
(Note 5)
P
mW
°C
O
T
125
j
T
opr
−55~100
−55~125
260
°C
T
stg
T
sol
°C
°C
(Note 6)
BV
5000
Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Derate 0.45 mA / °C above 70 °C.
Note 2: 50% duty cycle, 1 ms pulse width.
Derate 0.9 mA / °C above 70 °C.
Note 3: Pulse width ≤ 1 μs, 300 pps.
Note 4: Derate 0.8 mW / °C above 70 °C.
Note 5: Derate 1.8 mW / °C above 70 °C.
Note 6: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
Note 7: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the
high-gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
2
2007-10-01
TLP719
Electrical Characteristics (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
I
I
= 16 mA
= 16 mA
1.65
1.85
V
F
F
Forward voltage
Temperature coefficient
ΔV / ΔTa
―
−2
―
mV / °C
F
F
Reverse current
I
V
V
= 5 V
―
―
―
―
45
3
10
―
μA
pF
nA
R
R
F
C
= 0 V , f = 1 MHz
Capacitance between terminals
T
I
I
I
I
= 0 mA ,V
= V = 5.5 V
O
500
OH (1)
OH (2)
F
F
CC
CC
= 0 mA ,V
= 20 V
= 30 V
―
―
―
―
5
HIGH-level output current
V
I
O
μA
= 0 mA ,V
= 30 V
F
CC
I
50
OH
V
= 20 V,Ta = 70 °C
O
HIGH-level supply current
Supply voltage
I
I
I
I
= 0 mA ,V
= 30 V
―
30
20
0.01
―
1
μA
V
CCH
F
CC
V
= 0.01 mA
―
―
CC
CC
Output voltage
V
= 0.5 mA
O
―
V
O
Coupled Electrical Characteristics (Ta = 25 °C)
Characteristic
Current transfer ratio
LOW-level output voltage
Symbol
Test Condition
Min.
20
Typ.
―
Max.
―
Unit
%
I
= 16 mA ,V
= 4.5 V
= 4.5 V
F
CC
CC
I
/ I
F
O
V
V
I
= 0.4 V
O
= 16 mA, V
= 2.4 mA
F
―
―
0.4
V
OL
I
O
Isolation Characteristics (Ta = 25 °C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
Test Condition
Min.
Typ.
0.8
Max.
―
Unit
pF
Ω
C
R
V = 0 V , f = 1 MHz
(Note 6)
(Note 6)
―
S
S
R.H. ≤ 60% ,V = 500 V
12
14
S
1×10
10
―
AC, 1 minute
5000
―
―
―
―
―
V
rms
Isolation voltage
BV
S
AC, 1 second , in oil
DC, 1 minute , in oil
10000
10000
―
Vdc
3
2007-10-01
TLP719
Switching Characteristics (Ta = 25 °C, VCC = 5 V)
Test
Cir-
cuit
Characteristic
Symbol
Test Condition
= 0→ 16 mA
Min.
Typ.
Max.
Unit
I
F
Propagation delay time
Propagation delay time
(H→ L)
(L→ H)
t
t
―
―
―
―
0.8
0.8
μs
μs
pHL
R = 1.9kΩ
L
Fig1
Fig2
I
= 16→ 0 mA
F
pLH
R = 1.9kΩ
L
I
= 0 mA
F
Common mode transient
immunity at logic HIGH output
V
= 400 Vp p
−
CM
10000
―
―
―
―
V / μs
V / μs
H
CM
R = 1.9kΩ
(Note 8)
L
I
= 16 mA
F
Common mode transient
immunity at logic LOW output
V
= 400 Vp p
−
CM
−10000
L
CM
R = 1.9 kΩ
(Note 8)
L
Note 8 : CM is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic
L
LOW state (V < 0.8 V).
O
CM is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic
H
HIGH state (V >2 V).
O
Figure 1. Switching Time Test Circuit
V
= 5 V
CC
IF
→
1
2
3
6
5
4
PULSE INPUT
( PW = 100 μs
R
L
I
F
Duty = 10%)
V
O
tpHL
tpLH
MONITORING NODE
V
O
0.1 μF
5V
SHIELD
IF MONITORING NODE
1.5V
V
OL
Figure 2. Common Mode Noise Immunity Test Circuit.
400 V
90%
VCC=5V
1
6
5
4
IF
→
RL=1.9kΩ
10%
0 V
SW
A
2
3
VCM
VOH
SW:B (IF= 0 mA)
B
tr
tf
VO
0.1μF
CM
H
320 (V)
tr (μs)
SHIELD
CMH =
2 V
0.8 V
CM
320 (V)
tf (μs)
VOL
CML = −
L
−
+
SW:A (IF = 16 mA)
VCM
4
2007-10-01
TLP719
I
– V
ΔV / ΔTa – I
F F
F
F
100
−2.6
−2.4
−2.2
−2.0
−1.8
−1.6
−1.4
Ta = 25°C
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.0
0.3 0.5
1
3
5
10
30
1.2
1.4
1.6
1.8
2.0
0.1
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Ta
I – I
O F
OH(1)
300
100
10
V
V
= 5 V
CC
5
3
= 0.4 V
O
Ta = 25°C
50
30
1
0.5
0.3
10
5
3
0.1
0.05
0.03
1
0.01
0.1
0
40
80
120
160
0.3 0.5
100
300
1
3
5
10
30 50
Ambient temperature Ta (°C)
Forward current
I
(mA)
F
I
/ I – I
F
I / I – Ta
O F
O
F
100
1.2
1.0
0.8
0.6
0.4
0.2
0
V
V
= 5 V
CC
= 0.4 V
O
50
30
Ta = 25°C
10
25°C
Normalized to
= 16 mA
I
F
100°C
5
3
V
V
= 4.5 V
CC
= 0.4 V
O
1
0.3 0.5
1
3
5
10
30 50
-40
20
40
60
80
100
-20
0
Forward current
I
(mA)
Ambient temperature Ta (°C)
F
5
2007-10-01
TLP719
I
O
– V
V – I
O F
O
5
4
3
2
1
0
V
= 5 V
CC
30mA
25mA
10
8
V
= 5V
I
CC
F
Ta = 25°C
R
L
V
o
20mA
15mA
6
Ta = 25°C
4
10mA
R
L
= 2 kΩ
3.9 kΩ
10 kΩ
2
I
= 5mA
F
0
0
3
4
5
6
7
0
12
16
20
24
1
2
4
8
Output voltage
V
(V)
Forward current
I
(mA)
O
F
tpHL , tpLH - Ta
tpHL, tpLH - RL
5
5
I
=16mA
IF=16mA
VCC=5V
F
3
3
VCC=5V
tpLH
Ta=25℃
RL=1.9kΩ
1
1
0.5
0.3
0.5
0.3
tpHL
tpLH
tpHL
0.1
0.1
-40
-20
0
20
40
60
80
100
1
30 50
10
3
5
100
Load resistanceꢀRLꢀ（ｋΩ）
Ambient temperatureꢀTaꢀ（℃）
6
2007-10-01
TLP719
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-10-01
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