SSM6P16FE [TOSHIBA]

High Speed Switching Applications; 高速开关应用
SSM6P16FE
型号: SSM6P16FE
厂家: TOSHIBA    TOSHIBA
描述:

High Speed Switching Applications
高速开关应用

晶体 开关 小信号场效应晶体管 光电二极管
文件: 总5页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM6P16FE  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM6P16FE  
High Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
Small package  
Low on-resistance : R = 8 Ω (max) (@V  
= −4 V)  
GS  
on  
: R = 12 Ω (max) (@V  
= −2.5 V)  
= −1.5 V)  
on  
GS  
GS  
: R = 45 Ω (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
Unit  
V
V
DS  
Gate-Source voltage  
V
D
±10  
V
GSS  
DC  
I
100  
200  
150  
D
Drain current  
mA  
Pulse  
I
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
mW  
°C  
1: Source1  
T
150  
ch  
2: Gate1  
3: Drain2  
4: Source2  
5: Gate2  
6: Drain1  
Storage temperature range  
T
55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2N1D  
Note 1: Total rating, mounted on FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)  
0.3 mm  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
D T  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is  
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  
SSM6P16FE  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
MIN.  
TYP.  
MAX.  
UNIT  
I
V
= ±10 V, V  
= 0  
= 0  
= 0  
20  
±1  
μA  
V
GSS  
GS  
I = −0.1 mA, V  
D
DS  
GS  
GS  
Drain-Source breakdown voltage  
Drain cut-off current  
V
(BR) DSS  
I
V
V
V
= −20 V, V  
1  
1.1  
μA  
V
DSS  
DS  
DS  
DS  
Gate threshold voltage  
V
= −3 V, I = −0.1 mA  
0.6  
25  
th  
D
Forward transfer admittance  
Y ⎪  
fs  
= −3 V, I = −10 mA  
mS  
D
I
I
I
= −10 mA, V  
= −4 V  
6
8
D
D
D
GS  
GS  
Drain-Source on-resistance  
R
Ω
= −10 mA, V  
= −1 mA, V  
= −2.5 V  
8
12  
45  
DS (ON)  
= −1.5 V  
18  
11  
3.7  
10  
130  
190  
GS  
Input capacitance  
C
C
pF  
pF  
pF  
iss  
V
= −3 V, V  
= 0, f = 1 MHz  
GS  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
oss  
on  
C
t
Turn-on time  
Turn-off time  
V
V
= −3 V, I = − 10 mA,  
DD  
GS  
D
Switching time  
ns  
= 0 ~ 2.5 V  
t
off  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
(c) V  
IN  
0 V  
OUT  
10%  
0
IN  
90%  
2.5V  
10 μs  
R
L
2.5 V  
V
DD  
V
OUT  
DS (ON)  
90%  
V
= −3 V  
DD  
<
Duty 1%  
=
10%  
V
: t , t < 5 ns  
= 50 Ω)  
V
IN  
r
f
DD  
t
t
f
r
(Z  
out  
Common Source  
t
t
off  
on  
Ta = 25°C  
Precaution  
V
th  
can be expressed as the voltage between the gate and source when the low operating current value is I =  
D
100 μA for this product. For normal switching operation, V  
requires a higher voltage than V and V  
th GS (off)  
GS (on)  
requires a lower voltage than V . (The relationship can be established as follows: V  
th  
< V < V  
)
GS (off)  
th  
GS (on).  
Be sure to take this into consideration when using the device.  
2
2007-11-01  
SSM6P16FE  
I
– V  
I
D
– V  
GS  
D
DS  
-250  
-200  
-150  
-100  
-50  
-1000  
-100  
-10  
Common Source  
Common Source  
Ta = 25°C  
V
= -3 V  
DS  
-10  
-4  
-3  
-2.7  
Ta = 100°C  
-2.5  
-2.3  
25°C  
25°C  
-1  
-2.1  
-1.9  
-1.7  
-0.1  
V
= -1.5 V  
GS  
0
0
-0.01  
-0.5  
-1  
-1.5  
-2  
0
-1  
-2  
-3  
-4  
Drain - Source voltage  
V
(V)  
Gate- Source voltage  
V
(V)  
DS  
GS  
R
– V  
GS  
DS (ON)  
R
– I  
D
DS (ON)  
20  
1.8  
1.6  
Common Source  
= -1 mA  
I
D
25  
20  
15  
10  
5
V
= -1.5 V  
GS  
1.4  
1.2  
10  
8
Ta=100℃  
25℃  
-2.5 V  
-4 V  
6
.4  
2
-25℃  
0
-1  
0
0
-2  
-4  
-6  
-10  
-8  
-10  
-100  
-1000  
Drain - current  
I
(mA)  
Gate - Source voltage  
V
(V)  
D
GS  
R
Ta  
V
Ta  
th  
DS (ON)  
40  
35  
30  
25  
20  
15  
10  
5
-2  
Common Source  
Common Source  
-1.8  
-1.6  
I
= -0.1 mA  
D
V
= -3 V  
DS  
-1.4  
-1.2  
-1  
V
=−1.5 V, ID=-1mA  
GS  
-0.8  
-0.6  
-0.4  
-0.2  
0
-2.5 V, -10mA  
-4V, -10mA  
0
25  
0
25  
50  
75  
100  
125  
150  
25  
0
25  
50  
75  
100  
125  
150  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
3
2007-11-01  
SSM6P16FE  
Y – I  
fs  
I
– V  
DR DS  
D
1000  
-250  
-200  
-150  
-100  
-50  
Common Source  
= 0 V  
Common Source  
=−3 V  
Ta = 25°C  
500  
300  
V
GS  
V
DS  
Ta = 25°C  
D
100  
I
DR  
G
50  
30  
S
10  
5
3
1
-1  
0
0
-10  
-100  
-1000  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
Drain current  
I
(mA)  
Drain - Source  
V
(V)  
D
DS  
t – I  
D
c – V  
DS  
200  
100  
10000  
Common Source  
= 0 V  
f = 1 MHz  
Ta = 25°C  
Common Source  
V
GS  
5000  
3000  
V
V
= -3 V  
= 0~-2.5 V  
DD  
GS  
Ta = 25°C  
t
off  
1000  
t
f
500  
300  
t
on  
10  
100  
C
iss  
t
r
50  
30  
C
oss  
C
rss  
1
-0.1  
10  
-0.1  
-1  
-10  
-100  
-1  
-10  
-100  
Drain - Source voltage VDS (V)  
Drain current I  
(mA)  
D
P
Ta  
D
250  
200  
150  
100  
50  
Mounted on FR4 board  
(25.4mmX25.4mmX1.6t  
CU Pad:0.6mm2X3  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient temperature Ta (°C)  
4
2007-11-01  
SSM6P16FE  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
5
2007-11-01  

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