SSM6P28TU [TOSHIBA]
High-Speed Switching Applications; 高速开关应用
| 型号： | SSM6P28TU |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications |
| 文件： | 总5页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6P28TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6P28TU
High-Speed Switching Applications
Power Management Switch Applications
Unit: mm
•
•
•
1.8V drive
2.1±0.1
1.7±0.1
P-ch 2-in-1
Low ON-resistance:
R
on
R
on
R
on
= 460 mΩ (max) (@V
= 306 mΩ (max) (@V
= 234 mΩ (max) (@V
= −1.8 V)
= −2.5 V)
= −4.0 V)
GS
GS
GS
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 Common)
4
3
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
−20
± 8
V
V
DS
Gate-source voltage
V
GSS
DC
I
−0.8
D
Drain current
A
Pulse
I
−1.6
DP
D (Note 1)
1.Source1
2.Gate1
4.Source2
5.Gate2
Drain power dissipation
Channel temperature
P
500
mW
°C
T
150
ch
3.Drain2
6.Drain1
Storage temperature range
T
−55 to 150
°C
stg
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
UFM
JEDEC
―
―
JEITA
TOSHIBA
2-2T1B
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Weight: 7 mg (typ.)
Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= − 1 mA, V
= − 1 mA, V
= 0
− 20
− 12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
Drain-source breakdown voltage
= + 8 V
GS
Drain cutoff current
I
V
V
V
V
= − 20 V, V
= 0
= 0
⎯
− 10
± 1
− 1.0
⎯
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 8 V, V
⎯
⎯
GSS
DS
V
= − 3 V, I = − 1 mA
− 0.3
1.5
⎯
⎯
th
D
⏐Y ⏐
= − 3 V, I = − 0.6 A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
2.5
175
230
300
250
45
S
fs
D
I
I
I
= − 0.6 A, V
= − 4.0 V
= − 2.5 V
= − 1.8 V
234
306
460
⎯
D
D
D
GS
GS
GS
Drain-source ON-resistance
R
mΩ
= − 0.4 A, V
= − 0.1 A, V
⎯
DS (ON)
⎯
Input capacitance
C
V
V
V
= − 10 V, V
= − 10 V, V
= − 10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output capacitance
C
⎯
⎯
oss
Reverse transfer capacitance
C
⎯
35
⎯
rss
on
Turn-on time
Switching time
t
t
⎯
12
⎯
V
V
= − 10 V, I = − 0.25 A,
DD
GS
D
ns
V
= 0 to − 2.5 V, R = 4.7 Ω
Turn-off time
18
G
⎯
⎯
⎯
off
Drain-source forward voltage
Note 2: Pulse test
V
I
= 0.8 A, V = 0 V
GS
(Note 2)
0.85
1.2
DSF
D
1
2007-11-01
SSM6P28TU
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
0 V
OUT
10 %
0
IN
90 %
− 2.5 V
10 μs
R
−2.5 V
L
V
DD
V
OUT
DS (ON)
90 %
10 %
V
= - 10 V
= 4.7 Ω
DD
R
G
<
D.U. 1 %
V
DD
t
t
f
r
V
: t , t < 5 ns
IN
r
f
Common Source
t
t
off
on
Ta = 25 °C
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
3
Q1
JJ1
Q2
1
2
3
1
2
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = − 1 mA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th,
voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM6P28TU
ID - VGS
ID - VDS
- 4.0
10
1
-5
-4
-3
-2
-1
-0
- 10
- 2.5
Ta = 85 °C
0.1
0.01
0.001
0.0001
- 1.8
- 1.5
25 °C
- 25 °C
Common Source
VDS = - 3 V
Common Source
Ta = 25 °C
VGS = - 1.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
1
2
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
RDS(ON) - VGS
RDS(ON) - Ta
400
350
300
250
200
150
100
50
300
250
200
150
100
50
Common Source
Ta = 25 °C
Common Source
- 0.8 A
- 1.8 V, - 0.1 A
- 0.4 A
ID = - 0.1 A
- 2.5 V, - 0.4 A
VGS = - 4 V, ID = - 0.8 A
0
0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source Voltage VGS (V)
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient Temperature Ta(
)
℃
RDS(ON) - ID
Vth - Ta
400
350
300
250
200
150
100
50
-1
Common Source
ID = - 1 mA
-0.8
-0.6
-0.4
-0.2
-0
VDS = - 3 V
- 1.8 V
- 2.5 V
VGS = - 4 V
Common Source
Ta = 25 °C
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
-0
-1
-2
-3
-4
-5
Ambient Temperature Ta(°C)
Drain Current ID (A)
3
2007-11-01
SSM6P28TU
|Yfs| - ID
IDR - VDS
10.0
-10
-1
Common Source
VGS = 0 V
Ta = 25 °C
25 °C
- 25 °C
25 °C
Ta = 85 °C
- 25 °C
1.0
-0.1
Ta = 85 °C
-0.01
-0.001
Common Source
VDS = - 3 V
Ta = 25 °C
0.1
-0.01
-0.1
-1
-10
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage VDS (V)
Drain Current ID (A)
t - I
D
C - VDS
1000
100
10
1000
100
10
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
toff
tf
Ciss
ton
tr
Common Source
Coss
Crss
VGS = 0 V
f = 1 MHz
Ta = 25 °C
1
0.1
1
10
100
-0.01
-0.1
-1
-10
Drain Current I (A)
D
Drain-Source Voltage V
(V)
DS
Rth - tw
c
PD - Ta
1000
800
600
400
200
0
1000
a : Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on a ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b
a
b
a
100
10
1
Single pulse
a : Mounted on an ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on a FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c : M ounted on a FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
0.001
0.01
0.1
1
10
100
1000
0
20 40 60 80 100 120 140 160
Ambient Temperature Ta (°C)
Pulse Width tw (S)
4
2007-11-01
SSM6P28TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
相关型号：
SSM6P28TU(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,800MA I(D),SOT-363VAR
TOSHIBA
SSM6P35FE(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363VAR
TOSHIBA
SSM6P35FE(TPL3,F)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363VAR
TOSHIBA
SSM6P35FU
TRANSISTOR 100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, US6, 2-2J1C, 6 PIN, FET General Purpose Small Signal
TOSHIBA
SSM6P36FE(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
TOSHIBA
©2020 ICPDF网 联系我们和版权申明