SSM6P25TU [TOSHIBA]

High Speed Switching Applications; 高速开关应用
SSM6P25TU
型号: SSM6P25TU
厂家: TOSHIBA    TOSHIBA
描述:

High Speed Switching Applications
高速开关应用

晶体 开关 小信号场效应晶体管 光电二极管
文件: 总6页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM6P25TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)  
SSM6P25TU  
High Speed Switching Applications  
Unit: mm  
Optimum for high-density mounting in small packages  
2.1±0.1  
1.7±0.1  
Low on-resistance:  
R
on  
on  
= 260m(max) (@V  
= 430m(max) (@V  
= -4 V)  
GS  
GS  
R
= -2.5 V)  
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
4
3
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
-20  
± 12  
-0.5  
-1.5  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
1.Source1 4.Source2  
Pulse  
I
DP  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
P
D
Drain power dissipation  
Channel temperature  
500  
mW  
(Note 1)  
T
ch  
150  
°C  
°C  
Storage temperature range  
T
stg  
55~150  
UF6  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2T1B  
Weight: 7.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board. (total dissipation)  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PH  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  
SSM6P25TU  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ± 12V, V = 0  
Min  
Typ.  
Max  
Unit  
I
V
-20  
-8  
±1  
μA  
GSS  
GS  
DS  
V
V
I
I
= -1 mA, V  
= -1 mA, V  
= 0  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
V
= +12 V  
= 0  
Drain cut-off current  
I
V
V
V
= -20 V, V  
-1  
μA  
V
DSS  
DS  
DS  
DS  
GS  
Gate threshold voltage  
Forward transfer admittance  
V
= -3 V, I = -0.1 mA  
-0.5  
0.65  
-1.1  
th  
D
Y ⏐  
= -3 V, I = -0.25 A  
(Note2)  
(Note2)  
(Note2)  
1.3  
210  
310  
218  
42  
S
fs  
D
I
I
= -0.25 A, V  
= -4 V  
260  
430  
D
D
GS  
GS  
Drain-Source on-resistance  
R
mΩ  
DS (ON)  
= -0.25 A, V  
= -2.5 V  
Input capacitance  
C
V
V
V
V
V
= -10 V, V  
= -10 V, V  
= -10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
pF  
pF  
pF  
iss  
rss  
oss  
on  
DS  
DS  
DS  
DD  
GS  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
C
t
52  
Turn-on time  
Switching time  
= -10 V, I = -0.25 A,  
16  
D
ns  
= 0~-2.5 V, R = 4.7 Ω  
Turn-off time  
t
15  
G
off  
Note2: Pulse test  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
IN  
0 V  
OUT  
10%  
0
IN  
90%  
2.5V  
10 μs  
R
2.5 V  
L
V
DD  
(c) V  
V
OUT  
DS (ON)  
90%  
V
= -10 V  
= 4.7 Ω  
DD  
R
G
10%  
<
D.U. 1%  
V
=
DD  
t
t
f
r
V
: t , t < 5 ns  
IN  
r
f
Common Source  
t
t
off  
on  
Ta = 25°C  
Precaution  
V
th  
can be expressed as the voltage between gate and source when the low operating current value is I =-100 μA for  
D
this product. For normal switching operation, V  
requires a higher voltage than V and V requires a lower  
GS (off)  
GS (on)  
th  
voltage than V  
th.  
(The relationship can be established as follows: V  
< V < V  
)
GS (off)  
th  
GS (on)  
Please take this into consideration when using the device.  
2
2007-11-01  
SSM6P25TU  
ID - VDS  
-3.0  
ID - VGS  
-10000  
-1600  
-1400  
-1200  
-1000  
-800  
-600  
-400  
-200  
0
-5.0  
1000  
-
-2.0  
100  
-
-4.0  
10  
-
Ta=100°C  
-1.8  
-
1
25°  
-25°C  
VGS=-1.6  
-
0.1  
Common Source  
VDS=-3V  
Common Source  
Ta=25°C  
-
-
0.01  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
0
-1  
-2  
-3  
Drain-Source voltage VDS (V)  
Gate-Source voltage VGS (V)  
RDS(ON) - VGS  
RDS(ON) - ID  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
Common Source  
ID=-250mA  
-2.5V  
Ta=100°C  
VGS=-4V  
25°C  
-25°C  
Common Source  
Ta=25°C  
0
0
-200 -400 -600 -800 -1000 -1200 -1400 -1600  
Drain current ID (mA)  
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10  
Gate-Source voltage VGS (V)  
RDS(ON) - Ta  
Vth - Ta  
500  
400  
300  
200  
100  
0
-1  
Common Source  
ID=-250mA  
-0.8  
-0.6  
-0.4  
-0.2  
0
-2.5V  
VGS=-4V  
Common Source  
ID=-0.1mA  
VDS=-3V  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
Ambient temperature Ta (°C)  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
Ambient temperature Ta (°C)  
3
2007-11-01  
SSM6P25TU  
|Yfs| - ID  
IDR - VDS  
Common Source  
VGS=0V  
Ta=25°C  
10  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
25°C  
-25°C  
1
Ta=100°C  
Common Source  
VDS=-3V  
Ta=25°C  
0
-10  
-100  
-1000  
-10000  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
Drain-Source voltage VDS (V)  
Drain current ID (mA)  
C - VDS  
t - ID  
1000  
100  
10  
1000  
100  
10  
Common Source  
VDD=-10V  
VGS=0~-2.5V  
Ta=25°C  
toff  
tf  
Ciss  
ton  
tr  
Coss  
Crss  
Common Source  
VGS=0V  
f=1MHz  
Ta=25°C  
1
-0  
-1  
-10  
-100  
-10  
-100  
-1000  
-10000  
Drain current ID (mA)  
Drain-Source voltage VDS (V)  
PD* - Ta  
1000  
800  
600  
400  
200  
0
mounted FR4 board  
t=10s  
DC  
(25.4mm*25.4mm*1.6t  
2
Cu Pad :645mm )  
0
20  
40  
60  
80 100 120 140 160  
Ambient temperature Ta(  
)
*:Total Rating  
4
2007-11-01  
SSM6P25TU  
r
th  
– t  
w
1000  
100  
10  
Single pulse  
Mounted on FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width  
t
(s)  
w
5
2007-11-01  
SSM6P25TU  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  

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