SSM6P25TU [TOSHIBA]
High Speed Switching Applications; 高速开关应用
| 型号： | SSM6P25TU |
| 厂家： | 
TOSHIBA |
| 描述： | High Speed Switching Applications |
| 文件： | 总6页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6P25TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P25TU
High Speed Switching Applications
Unit: mm
•
•
Optimum for high-density mounting in small packages
2.1±0.1
1.7±0.1
Low on-resistance:
R
on
on
= 260mΩ (max) (@V
= 430mΩ (max) (@V
= -4 V)
GS
GS
R
= -2.5 V)
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
4
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-20
± 12
-0.5
-1.5
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
1.Source1 4.Source2
Pulse
I
DP
2.Gate1
3.Drain2
5.Gate2
6.Drain1
P
D
Drain power dissipation
Channel temperature
500
mW
(Note 1)
T
ch
150
°C
°C
Storage temperature range
T
stg
−55~150
UF6
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM6P25TU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current
Symbol
Test Condition
= ± 12V, V = 0
Min
Typ.
Max
Unit
I
V
⎯
-20
-8
⎯
⎯
±1
⎯
μA
GSS
GS
DS
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
V
= +12 V
= 0
⎯
⎯
Drain cut-off current
I
V
V
V
= -20 V, V
⎯
⎯
-1
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
Forward transfer admittance
V
= -3 V, I = -0.1 mA
-0.5
0.65
⎯
⎯
-1.1
⎯
th
D
⏐Y ⏐
= -3 V, I = -0.25 A
(Note2)
(Note2)
(Note2)
1.3
210
310
218
42
S
fs
D
I
I
= -0.25 A, V
= -4 V
260
430
⎯
D
D
GS
GS
Drain-Source on-resistance
R
mΩ
DS (ON)
= -0.25 A, V
= -2.5 V
⎯
Input capacitance
C
V
V
V
V
V
= -10 V, V
= -10 V, V
= -10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
⎯
C
t
⎯
52
⎯
Turn-on time
Switching time
= -10 V, I = -0.25 A,
⎯
16
⎯
D
ns
= 0~-2.5 V, R = 4.7 Ω
⎯
⎯
Turn-off time
t
15
G
off
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
(b) V
IN
0 V
OUT
10%
0
IN
90%
−2.5V
10 μs
R
−2.5 V
L
V
DD
(c) V
V
OUT
DS (ON)
90%
V
= -10 V
= 4.7 Ω
DD
R
G
10%
<
D.U. 1%
V
DD
t
t
f
r
V
: t , t < 5 ns
IN
r
f
Common Source
t
t
off
on
Ta = 25°C
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I =-100 μA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V requires a lower
GS (off)
GS (on)
th
voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration when using the device.
2
2007-11-01
SSM6P25TU
ID - VDS
-3.0
ID - VGS
-10000
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
-5.0
1000
-
-2.0
100
-
-4.0
10
-
Ta=100°C
-1.8
-
1
25°
-25°C
VGS=-1.6
-
0.1
Common Source
VDS=-3V
Common Source
Ta=25°C
-
-
0.01
0
-0.2
-0.4
-0.6
-0.8
-1
0
-1
-2
-3
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
RDS(ON) - VGS
RDS(ON) - ID
500
400
300
200
100
0
500
400
300
200
100
Common Source
ID=-250mA
-2.5V
Ta=100°C
VGS=-4V
25°C
-25°C
Common Source
Ta=25°C
0
0
-200 -400 -600 -800 -1000 -1200 -1400 -1600
Drain current ID (mA)
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
RDS(ON) - Ta
Vth - Ta
500
400
300
200
100
0
-1
Common Source
ID=-250mA
-0.8
-0.6
-0.4
-0.2
0
-2.5V
VGS=-4V
Common Source
ID=-0.1mA
VDS=-3V
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2007-11-01
SSM6P25TU
|Yfs| - ID
IDR - VDS
Common Source
VGS=0V
Ta=25°C
10
1600
1400
1200
1000
800
600
400
200
0
25°C
-25°C
1
Ta=100°C
Common Source
VDS=-3V
Ta=25°C
0
-10
-100
-1000
-10000
0.0
0.2
0.4
0.6
0.8
1.0
Drain-Source voltage VDS (V)
Drain current ID (mA)
C - VDS
t - ID
1000
100
10
1000
100
10
Common Source
VDD=-10V
VGS=0~-2.5V
Ta=25°C
toff
tf
Ciss
ton
tr
Coss
Crss
Common Source
VGS=0V
f=1MHz
Ta=25°C
1
-0
-1
-10
-100
-10
-100
-1000
-10000
Drain current ID (mA)
Drain-Source voltage VDS (V)
PD* - Ta
1000
800
600
400
200
0
mounted FR4 board
t=10s
DC
(25.4mm*25.4mm*1.6t
2
Cu Pad :645mm )
0
20
40
60
80 100 120 140 160
Ambient temperature Ta(
)
℃
*:Total Rating
4
2007-11-01
SSM6P25TU
r
th
– t
w
1000
100
10
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
5
2007-11-01
SSM6P25TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
相关型号：
SSM6P25TU(5LOMII,F
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET
TOSHIBA
SSM6P25TU(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,500MA I(D),SOT-363VAR
TOSHIBA
SSM6P25TU(TE85L,F)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,500MA I(D),SOT-363VAR
TOSHIBA
SSM6P25TU,LF(T
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET
TOSHIBA
SSM6P28TU(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,800MA I(D),SOT-363VAR
TOSHIBA
SSM6P35FE(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363VAR
TOSHIBA
©2020 ICPDF网 联系我们和版权申明