SSM3K48FU,LF [TOSHIBA]

Small Signal Field-Effect Transistor;
SSM3K48FU,LF
型号: SSM3K48FU,LF
厂家: TOSHIBA    TOSHIBA
描述:

Small Signal Field-Effect Transistor

文件: 总5页 (文件大小:212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM3K48FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
SSM3K48FU  
Load Switching Applications  
Unit: mm  
2.5-V drive  
Low ON-resistance: R  
= 3.2 Ω (max) (@V  
= 5.4 Ω (max) (@V  
= 4.0 V)  
= 2.5 V)  
DS(ON)  
DS(ON)  
GS  
R
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
V
30  
±20  
V
V
DSS  
Gate-Source voltage  
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
400  
DP  
1. Gate  
USM  
2. Source  
3. Drain  
Power dissipation  
P
(Note 1)  
150  
mW  
°C  
D
Channel temperature  
T
ch  
150  
Storage temperature range  
T
55 to 150  
°C  
stg  
JEDEC  
JEITA  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-70  
2-2E1E  
TOSHIBA  
Weight: 6.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm2 × 3)  
0.6 mm  
1.0 mm  
Marking  
Equivalent Circuit (top view)  
3
3
DZ  
1
2
1
2
Start of commercial production  
2010-10  
1
2014-03-01  
SSM3K48FU  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 0.1 mA, V  
= 0.1 mA, V  
= 0 V  
30  
16  
0.8  
33  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
GS  
Drain-Source breakdown voltage  
= -10 V (Note 3)  
= 0 V  
Drain cut-off current  
I
V
V
V
V
= 30 V, V  
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±12 V, V  
= 0 V  
±1  
1.5  
DS  
V
= 3 V, I = 0.1 mA  
th  
D
Y ⎪  
fs  
= 3 V, I = 10 mA  
(Note 2)  
(Note 2)  
mS  
D
I
I
= 10 mA, V  
= 4 V  
2.0  
3.0  
15.1  
7.8  
12.4  
35  
3.2  
5.4  
D
D
GS  
GS  
Drain-Source ON resistance  
R
Ω
DS (ON)  
= 10 mA, V  
= 2.5 V (Note 2)  
Input capacitance  
C
C
iss  
V
= 3 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
oss  
on  
C
t
-1.2  
Turn-on time  
Turn-off time  
V
V
= 5 V, I = 10 mA,  
DD  
GS  
D
Switching time  
ns  
V
= 0 to 5 V, R = 50 Ω  
t
180  
-0.83  
G
off  
Drain-source forward voltage  
Note 2: Pulse test  
V
I
= -100 mA, V  
= 0 V (Note 2)  
GS  
DSF  
D
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the  
drain-source breakdown voltage is lowered in this mode.  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
IN  
5 V  
0 V  
OUT  
90%  
5 V  
0
IN  
10%  
10 μs  
= 5 V  
V
DD  
(c) V  
V
OUT  
DD  
90%  
10%  
V
DD  
R = 50 Ω  
G
Duty 1%  
V
DS (ON)  
t
t
f
r
V
: t , t < 5 ns  
IN  
r
f
Common Source  
t
t
off  
on  
Ta = 25°C  
Precaution  
V
th  
can be expressed as voltage between gate and source when low operating current value is I = 0.1 mA for this  
D
product. For normal switching operation, V  
requires higher voltage than V and V  
requires lower voltage  
GS (on)  
th  
GS (off)  
than V . (Relationship can be established as follows: V  
th  
< V < V  
)
GS (off)  
th  
GS (on)  
Please take this into consideration for using the device.  
Do not use this device under avalanche mode. It may cause the device to break down.  
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
2
2014-03-01  
SSM3K48FU  
I
– V  
I – V  
D GS  
D
DS  
400  
1000  
100  
10 V  
4.0 V  
3.0 V  
2.7 V  
300  
200  
100  
10  
1
2.5 V  
2.3 V  
Ta = 100 °C  
25 °C  
VGS = 2.1 V  
25 °C  
0.1  
Common Source  
Common Source  
Ta = 25 °C  
Pulse test  
V
= 3 V  
DS  
Pulse test  
0
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
1.0  
2.0  
3.0  
4.0  
Drain-source voltage  
V
(V)  
DS  
Gate-source voltage  
V
(V)  
GS  
R
– V  
GS  
DS (ON)  
R
– I  
D
DS (ON)  
2.5 V  
6
5
6
5
I
= 10 mA  
D
2.1 V  
2.3 V  
Common Source  
Pulse test  
2.7 V  
3.0 V  
4
3
4
3
25 °C  
4.0 V  
Ta = 100 °C  
2
1
2
1
VGS = 10 V  
Common Source  
Ta = 25°C  
25 °C  
Pulse test  
0
0
0
0
400  
2
4
6
8
10  
100  
200  
300  
Gate-source voltage  
V
(V)  
GS  
Drain current  
I
(mA)  
D
R
Ta  
V
Ta  
th  
DS (ON)  
2.0  
1.0  
0
6
Common Source  
Pulse test  
Common Source  
= 3 V  
V
DS  
5
4
I
= 0.1 mA  
D
I
= 10 m A / V = 2.5 V  
GS  
D
3
10 m A / 4.0 V  
10 m A / 10 V  
2
1
0
50  
0
50  
100  
150  
50  
0
50  
100  
150  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
3
2014-03-01  
SSM3K48FU  
I
– V  
DS  
DR  
|Y | – I  
fs  
D
1000  
100  
10  
1000  
Common Source  
= 3 V  
Ta = 25°C  
V
DS  
Pulse test  
100  
10  
25 °C  
Common Source  
V
= 0 V  
GS  
Pulse test  
Ta =100 °C  
D
1
I
G
DR  
25 °C  
S
0.1  
1
100  
10  
1000  
0
–0.5  
–1.0  
–1.5  
1
Drain current  
I
(mA)  
Drain-source voltage  
V
(V)  
D
DS  
C – V  
DS  
t – I  
D
1000  
100  
10  
100  
t
off  
t
30  
10  
f
t
on  
C
iss  
C
oss  
t
r
Common Source  
C
rss  
Common Source  
Ta = 25°C  
3
1
V
V
= 5 V  
DD  
GS  
= 0 to 5 V  
f = 1 MHz  
Ta = 25 °C  
= 50Ω  
V
= 0 V  
GS  
R
G
1
0.1  
1
10  
100  
1
10  
100  
1000  
Drain-source voltage  
V
(V)  
DS  
Drain current  
I
(mA)  
D
P
– T  
a
D
250  
200  
150  
100  
50  
Mounted on FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6 mm × 3)  
2
0
0
40  
80  
120  
160  
Ambient temperature Ta (°C)  
4
2014-03-01  
SSM3K48FU  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively "Product") without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR  
APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for  
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,  
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
TOSHIBA sales representative.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the  
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited  
except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
5
2014-03-01  

相关型号:

SSM3K48FU,LF(T

Small Signal Field-Effect Transistor
TOSHIBA

SSM3K56ACT

SMALL SIGNAL, FET
TOSHIBA

SSM3K56ACT,L3F(T

Small Signal Field-Effect Transistor
TOSHIBA

SSM3K56FS

High-Speed Switching
TOSHIBA

SSM3K56FS(TE85L)

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,800MA I(D),SC-75
TOSHIBA

SSM3K56FS,LF(T

Small Signal Field-Effect Transistor
TOSHIBA

SSM3K56MFV

暂无描述
TOSHIBA

SSM3K56MFV,L3F(T

Small Signal Field-Effect Transistor
TOSHIBA

SSM3K7002BFU

High-Speed Switching Applications Analog Switch Applications
TOSHIBA

SSM3K7002F

High-Speed Switching Applications
TOSHIBA

SSM3K7002F(TE85L,F)

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59
TOSHIBA

SSM3K7002FU

High Speed Switching Applications
TOSHIBA