SSM3K7002F [TOSHIBA]
High-Speed Switching Applications; 高速开关应用
| 型号： | SSM3K7002F |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3K7002F
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
+0.5
2.5-0.3
•
•
Small package
Low ON-resistance : R = 3.3 Ω (max) (@V
+0.25
1.5-0.15
= 4.5 V)
= 5 V)
on
GS
GS
GS
: R = 3.2 Ω (max) (@V
on
1
: R = 3.0 Ω (max) (@V
= 10 V)
on
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
60
Unit
V
V
DS
Gate-source voltage
V
± 20
V
GSS
DC
I
200
D
Drain current
mA
1.Gate
Pulse
I
800
DP
2.Source
3.Drain
Drain power dissipation (Ta = 25°C)
Channel temperature
P
200
mW
°C
D
ch
stg
S-MINI
T
150
Storage temperature range
T
−55 to 150
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
⎯
Typ
Max
Unit
I
V
= ± 20 V, V = 0
DS
⎯
⎯
± 10
⎯
μA
V
GSS
GS
Drain-source breakdown voltage
Drain cutoff current
V
I
= 0.1 mA, V
= 0
60
⎯
(BR) DSS
D
GS
GS
I
V
V
V
= 60 V, V
= 0
⎯
1
μA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= 10 V, I = 0.25 mA
1.0
170
⎯
⎯
2.5
⎯
th
D
Forward transfer admittance
⎪Y ⎪
fs
= 10 V, I = 200 mA
⎯
mS
D
I
I
I
= 500 mA, V
= 10 V
= 5 V
2.0
2.1
2.2
17
1.4
5.8
2.4
26
3.0
3.2
3.3
⎯
D
D
D
GS
GS
GS
Drain-source ON-resistance
R
Ω
= 100 mA, V
= 100 mA, V
⎯
DS (ON)
= 4.5 V
⎯
Input capacitance
C
C
⎯
pF
pF
pF
iss
V
= 25 V, V
= 0, f = 1 MHz
I = 200 mA ,
D
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
GS
rss
C
oss
td
(on)
td
(off)
⎯
⎯
⎯
⎯
4.0
40
Turn-on delay time
Turn-off delay time
V
V
= 30 V ,
= 0 to 10 V
DD
GS
Switching time
ns
1
2007-11-01
SSM3K7002F
Switching Time Test Circuit
(a) Test circuit
10 V
0 V
90 %
(b) V
(c) V
IN
OUT
IN
10 V
10 %
R
L
0
V
DD
10 %
90 %
OUT
V
DD
10 μs
V
= 30 V
DD
<
Duty 1%
=
V
DS (ON)
t
t
f
r
V
: t , t < 2 ns
IN
r
f
(Z
out
Common Source
= 50 Ω)
td
(on)
td
(off)
Ta = 25 °C
Marking
Equivalent Circuit (top view)
3
3
NC
1
2
1
2
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = 0.25 mA
D
for this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th,
GS (off)
lower voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM3K7002F
ID - VDS
ID - VGS
1000
100
10
1000
900
800
700
600
500
400
300
200
100
0
Common Source
VDS = 10 V
Common Source
Ta = 25 °C
4.5 4.0
5
7
Ta = 100 °C
25 °C
10
3.3
3.0
- 25 °C
1
2.7
2.5
0.1
0.01
VGS = 2.3 V
0
0.5
1
1.5
2
0
1
2
3
4
5
Drain-Source Voltage VDS (V)
Gate-Source Voltage VGS (V)
RDS(ON) - ID
RDS(ON) - VGS
5
4
3
2
1
0
5
4
3
2
1
0
Common Source
ID = 100 mA
Common Source
Ta = 25 °C
Ta = 100 °C
25 °C
5.0 V
VGS = 4.5 V
10 V
- 25 °C
10
100
1000
0
2
4
6
8
10
Drain Current ID (mA)
Gate-Source Voltage VGS (V)
RDS(ON) - Ta
Vth - Ta
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
Common Source
Common Source
ID = 0.25 mA
VDS = 10 V
VGS = 4.5 V , ID = 100 mA
0.8
0.6
0.4
0.2
0
10 V , 500 mA
5.0 V , 100 mA
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
3
2007-11-01
SSM3K7002F
|Yfs| - ID
IDR - VDS
1000
1000
900
800
700
600
500
400
300
200
100
0
Common Source
VGS = 0 V
Common source
VDS = 10 V
Ta = 25 °C
Ta = 25 °C
D
G
IDR
100
S
10
10
100
1000
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Drain Current ID (mA)
Drain-Source Voltage VDS (V)
C - VDS
t - ID
100
10000
1000
100
10
Common Source
Common Source
VDD = 30 V
VGS = 0 V
f = 1 MHz
Ta = 25 °C
VGS = 0 to 10 V
Ta = 25 °C
tf
Ciss
10
Coss
td(off)
td(on)
tr
Crss
1
1
0.1
1
10
100
1
10
100
1000
Drain-Source Voltage VDS (V)
Drain Current ID (mA)
PD - Ta
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta (°C)
4
2007-11-01
SSM3K7002F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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