SSM3K56ACT [TOSHIBA]

SMALL SIGNAL, FET;


型号：	SSM3K56ACT
厂家：	TOSHIBA
描述：	SMALL SIGNAL, FET 开关晶体管
文件：	总8页 (文件大小：208K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSM3K56ACT

MOSFETs Silicon N-Channel MOS

SSM3K56ACT

1. Applications

•

High-Speed Switching

2. Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)

RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)

3. Packaging and Pin Configuration

1.Gate

2.Source

3.Drain

CST3

Start of commercial production

2015-11

2015-11-16

Rev.1.0

SSM3K56ACT

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±8

(Note 1)

(Note 1),(Note 2)

(Note 3)

1400

2800

500

IDP

Channel temperature

Storage temperature

Tch

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%

Note 3: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary according to the

board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

2015-11-16

Rev.1.0

SSM3K56ACT

5. Electrical Characteristics

5.1. Static Characteristics (Unless otherwise specified, Ta = 25)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VGS = ±6 V, VDS = 0 V



0.4



±1

µA

Drain cut-off current

VDS = 10 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = 1 mA, VGS = 0 V



(Note 1) V(BR)DSX ID = 1 mA, VGS = -5 V



(Note 2)

Vth

VDS = 3 V, ID = 1 mA



1.0

235

300

480

840



Drain-source on-resistance

(Note 3) RDS(ON) ID = 800 mA, VGS = 4.5 V

ID = 600 mA, VGS = 2.5 V

186

230

290

360

1.4

mΩ

ID = 200 mA, VGS = 1.8 V

ID = 50 mA, VGS = 1.5 V

Forward transfer admittance

(Note 3)

|Yfs|

VDS = 3 V, ID = 200 mA

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

ton

VDS = 10 V, VGS = 0 V,

f = 1 MHz



Reverse transfer capacitance

Output capacitance

5.5

Switching time (turn-on time)

VDD = 10 V, ID = 200 mA

VGS = 0 to 2.5 V, RG = 50 Ω,

Duty ≤ 1%, Input: tr, tf < 5 ns

Common source, See Chapter 5.3

Switching time (turn-off time)

toff



8.5



5.3. Switching Time Test Circuit

Fig. 5.3.1 Test Circuit of Switching Time

Fig. 5.3.2 Input Waveform/Output Waveform

5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Qgs1

Qgd

VDD = 10 V, VGS = 4.5 V,

ID = 800 mA



1.0

0.12

0.4



Gate-drain charge

2015-11-16

Rev.1.0

SSM3K56ACT

5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25)

Characteristics

Diode forward voltage

Symbol

Test Condition

Min

Typ.

Max

-1.2

Unit

(Note 1)

VDSF

ID = -1.4 A, VGS = 0 V



-0.82

Note 1: Pulse measurement.

6. Marking

Fig. 6.1 Marking

Fig. 6.2 Pin Condition(top view)

2015-11-16

Rev.1.0

SSM3K56ACT

7. Characteristics Curves (Note)

Fig. 7.1 ID - VDS

Fig. 7.2 ID - VGS

Fig. 7.3 RDS(ON) - VGS

Fig. 7.4 RDS(ON) - ID

Fig. 7.5 RDS(ON) - Ta

Fig. 7.6 Vth - Ta

2015-11-16

Rev.1.0

SSM3K56ACT

Fig. 7.7 |Yfs| - ID

Fig. 7.8 IDR - VDS

Fig. 7.9 C - VDS

Fig. 7.10 t - ID

Fig. 7.11 Dynamic Input Characteristics

Fig. 7.12 PD - Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2015-11-16

Rev.1.0

SSM3K56ACT

Package Dimensions

Unit: mm

Weight: 0.75 mg (typ.)

Package Name(s)

Nickname: CST3

2015-11-16

Rev.1.0

SSM3K56ACT

RESTRICTIONS ON PRODUCT USE

•

Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively "Product") without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's

written permission, reproduction is permissible only if reproduction is without alteration/omission.

ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible

for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,

equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,

trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices,

elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR

UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales

representative.

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any

intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,

INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING

WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND

(2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT,

OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR

PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

•

Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,

for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products

(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and

regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration

Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all

applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2015-11-16

Rev.1.0

SSM3K56ACT [TOSHIBA]

相关型号：

SSM3K56ACT,L3F(T

SSM3K56FS

SSM3K56FS(TE85L)

SSM3K56FS,LF(T

SSM3K56MFV

SSM3K56MFV,L3F(T

SSM3K7002BFU

SSM3K7002F

SSM3K7002F(TE85L,F)

SSM3K7002FU

SSM3K7002FU(LMAA,F

SSM3K7002FU(LSAN,F