GT8G121(SM) [TOSHIBA]
TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-252AA;
| 型号： | GT8G121(SM) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-252AA 栅 双极性晶体管 |
| 文件： | 总5页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT8G121
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G121
Unit: mm
STROBE FLASH APPLICATIONS
ꢀ 4th Generation (Trench Gate Structure)
ꢀ Enhancement−Mode
ꢀ Low Saturation Voltage
: V
= 7 V (Max.) (@I = 150 A)
C
CE (sat)
ꢀ 4 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
V
V
V
400
±6
V
V
CES
GES
GES
DC
Pulse
DC
Gate−Emitter Voltage
±8
V
I
8
A
C
Collector Current
1 ms
I
150
1.1
A
CP
Ta = 25°C
Tc = 25°C
P
W
W
°C
°C
C
C
Collector Power
Dissipation
P
20
JEDEC
JEITA
TOSHIBA
―
―
Junction Temperature
T
150
−55~150
j
Storage Temperature Range
T
stg
(A) 2−7B5C (B) 2−7B6C
Weight: 0.36 g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
TEST CONDITION
= 6 V, V = 0
MIN
TYP.
MAX
UNIT
I
I
V
V
―
―
―
―
10
10
1.5
7
µA
µA
V
GES
GE
CE
CE
Collector Cut−off Current
= 400 V, V
= 0
GE
CES
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
V
I
I
= 1 mA, V = 5 V
0.8
―
―
GE (OFF)
C
C
CE
V
= 150 A, V
= 4 V (Pulsed)
GE
3.5
V
CE (sat)
V
= 10 V, V
= 0,
GE
CE
Input Capacitance
C
―
3800
―
pF
µs
ies
f = 1 MHz
Rise Time
t
―
―
―
―
―
2.3
2.5
1.7
2.1
―
―
―
―
―
r
Turn−on Time
Switching Time
t
t
on
Fall Time
t
f
Turn−off Time
off
Thermal Resistance
R
―
6.25 °C / W
th (j−c)
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / µs.
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GT8G121
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GT8G121
3
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GT8G121
4
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GT8G121
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
5
2002-02-06
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