GT8G131_06 [TOSHIBA]
Strobe Flash Applications; 频闪闪光灯应用
| 型号： | GT8G131_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Strobe Flash Applications |
| 文件： | 总6页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT8G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
Strobe Flash Applications
Unit: mm
•
Supplied in Compact and Thin Package Requires Only a Small
Mounting Area
•
•
•
•
4th generation (trench gate structure) IGBT
Enhancement-mode
4-V gate drive voltage: V
= 4.0 V (min) (@I = 150 A)
C
GE
Peak collector current: I = 150 A (max)
C
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
Collector-emitter voltage
V
CES
V
GES
V
GES
400
±6
DC
Pulse
DC
Gate-emitter voltage
Collector current
V
A
±8
I
8
C
1 ms
I
150
1.1
CP
JEDEC
JEITA
―
―
Collector power dissipation (Note 1)
Junction temperature
P
W
°C
°C
C
T
j
150
−55~150
TOSHIBA
2-6J1C
Storage temperature range
T
stg
Weight: 0.080 g (typ.)
2
Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Equivalent Circuit
8
7
6
5
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/μs.
1
2006-11-02
GT8G131
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±6 V, V = 0
CE
⎯
⎯
⎯
⎯
±10
10
μA
μA
V
GES
GE
CE
Collector cut-off current
I
= 400 V, V
= 0
GE
CES
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
V
I
I
= 1 mA, V = 5 V
CE
0.6
⎯
⎯
1.5
7.0
⎯
GE (OFF)
C
C
V
= 150 A, V
= 4 V
3.0
3800
V
CE (sat)
GE
C
V
= 10 V, V
= 0, f = 1 MHz
⎯
pF
ies
CE
4 V
GE
Rise time
t
⎯
⎯
⎯
1.5
1.7
1.9
⎯
⎯
⎯
r
0
51 Ω
Turn-on time
Switching time
t
on
μs
<
V
: t 100 ns
IN
r
f
Fall time
t
f
<
t
100 ns
300 V
<
Duty cycle 1%
Turn-off time
t
⎯
⎯
2.4
⎯
off
Thermal resistance
(Note 2)
R
th (j-a)
⎯
⎯
114
°C/W
2
Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Marking
Type
GT8G131
※
Lot No.
● on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continues up to 52 or 53)
Year of manufacture (One low-order digits of calendar year)
2
2006-11-02
GT8G131
I
– V
I – V
C CE
C
CE
200
160
200
160
4.5 V
= 5 V
4.0 V
4.0 V
4.5 V
Common emitter
Common emitter
V
GE
Tc = −40°C
Tc = 25°C
3.5 V
3.5 V
V
= 5 V
GE
3.0 V
120
80
120
80
3.0 V
2.5 V
2.5 V
40
0
40
0
0
1
2
3
4
5
5
5
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I
– V
C CE
C
CE
200
160
200
160
4.5 V
4.0 V
Common emitter
Common emitter
4.5 V
4.0 V
3.5 V
Tc = 70°C
Tc = 125°C
3.5 V
3.0 V
V
= 5 V
V
= 5 V
GE
GE
120
80
120
80
3.0 V
2.5 V
2.5 V
40
0
40
0
0
1
2
3
4
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
CE
Collector-emitter voltage
V
(V)
CE
I
– V
V
– Tc
CE (sat)
C
GE
200
160
5
4
Common emitter
= 5 V
Common emitter
V = 4 V
GE
25°C
70°C
V
CE
I
= 150 A
C
−40°C
120
80
3
2
120 A
Tc = 125°C
90 A
60 A
40
0
1
0
0
1
2
3
4
−80
−40
0
40
80
120
160
Gate-emitter voltage
V
GE
(V)
Case temperature Tc (°C)
3
2006-11-02
GT8G131
V
– V
V
– V
CE GE
CE
GE
5
4
5
4
Common emitter
Common emitter
Tc = −40°C
Tc = 25°C
I
= 150 A
C
I
= 150 A
C
3
2
3
2
120 A
90 A
120 A
90 A
60 A
60 A
1
0
1
0
0
1
2
3
4
5
0
1
2
3
4
5
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
V
– V
V
– V
CE GE
CE
GE
5
4
5
4
Common emitter
Common emitter
Tc = 70°C
Tc = 125°C
I
= 150 A
C
I
= 150 A
C
120 A
90 A
3
2
3
2
120 A
90 A
60 A
60 A
1
0
1
0
0
1
2
3
4
5
0
1
2
3
4
5
Gate-emitter voltage
V
(V)
GE
Gate-emitter voltage
V
(V)
GE
V
– Tc
C – V
CE
GE (OFF)
2.0
1.6
5000
3000
Common emitter
= 5 V
C
ies
V
GE
= 1 mA
I
C
1000
300
1.2
0.8
C
oes
100
C
res
Common emitter
= 0 V
0.4
0
V
30
10
GE
f = 1 MHz
Tc = 25°C
−80
−40
0
40
80
120
160
1
3
10
30
100
300
(V)
1000
Case temperature Tc (°C)
Collector-emitter voltage V
CE
4
2006-11-02
GT8G131
Switching Time – R
V
, V
CE GE
– Q
G
G
20
10
500
400
10
8
Common emitter
Common emitter
V
= 300 V
= 2.0 Ω
CE
V
V
= 300 V
= 4 V
CE
GE
R
L
Tc = 25°C
I
= 150 A
C
Tc = 25°C
300
200
6
4
5
3
t
V
GE
off
t
t
r
f
2
100
0
t
on
V
CE
1
10
0
80
30
50
100
300
0
20
40
60
Gate resistance
R
G
(Ω)
Gate charge
Q
G
(nC)
Switching Time – I
Maximum Operating Area
C
10
800
600
400
200
0
t
off
3
1
t
f
t
on
t
r
Common emitter
V
= 350 V
CM
V
V
= 300 V
= 4 V
CE
GE
0.3
0.1
<
Tc 70°C
V
= 4 V
GE
R
G
= 51 Ω
<
<
Tc = 25°C
20 Ω
R
G
200 Ω
0
50
100
150
200
0
40
80
120
160
(A)
200
Peak collector current
I
CP
Collector current
I
C
(A)
Minimum Gate Drive Area
200
160
Tc = 25°C
120
80
70°C
40
0
0
2
4
6
8
Gate-emitter voltage
V
(V)
GE
5
2006-11-02
GT8G131
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-02
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