GT8G136 [TOSHIBA]
Silicon N Channel IGBT Strobe Flash Applications; 硅N沟道IGBT频闪闪光灯应用
| 型号： | GT8G136 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel IGBT Strobe Flash Applications |
| 文件： | 总6页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT8G136
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G136
Strobe Flash Applications
•
•
•
Compact and Thin (TSSOP-8) package
Unit: mm
Enhancement-mode
Peak collector current: IC = 150 A (max)
(@VGE=3.0V(min),Ta=70℃(max))/
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
Collector-emitter voltage
V
CES
V
GES
V
GES
400
± 6
± 8
DC
Pulse
Gate-emitter voltage
Collector current
V
A
Pulse
I
150
CP
(1)
(Note 1)
(Note 2a)
(Note 2b)
P
1.1
0.6
W
W
Collector power
dissipation（t＝10 s）
C
P
(2)
C
1,2 EMITTER
Junction temperature
T
150
°C
°C
j
3
4
EMITTER (Gate drive connection)
GATE
Storage temperature range
T
−55~150
stg
5,6,7,8 COLLECTOR
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
―
―
－
JEITA
TOSHIBA
Weight: 0.035 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Circuit Configuration
7 6 5
8
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal resistance , junction to
R
R
(1)
114
208
°C/W
°C/W
th (j-a)
th (j-a)
ambient
(t = 10 s)
(Note2a)
Thermal resistance , junction to
(2)
ambient
(t = 10 s)
(Note 3)
(Note2b)
Marking
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the
Part No. (or abbreviation code)
next page.
3 4
1 2
5
4
3
8G136
6
7
8
2
1
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2007-04-23
GT8G136
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
I
= ± 6 V, V
= 0
= 0
⎯
⎯
⎯
⎯
± 10
10
μA
μA
V
GES
GE
CE
CE
I
= 400 V, V
Collector cut-off current
CES
GE
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
V
= 1 mA, V = 5 V
CE
0.65
⎯
1.0
3.5
2500
1.35
⎯
GE (OFF)
C
V
I
= 150 A, V
= 3 V
V
CE (sat)
C
GE
= 10 V, V = 0, f = 1 MHz
GE
C
V
pF
⎯
⎯
ies
CE
Rise time
t
r
⎯
⎯
⎯
⎯
1.5
1.7
1.6
1.9
⎯
⎯
⎯
⎯
3 V
0
51 Ω
t
Turn-on time
Switching time
on
μs
<
V
: t 100 ns
IN
r
Fall time
t
f
<
t
100 ns
≒300V
f
<
Duty cycle 1%
Turn-off time
t
off
Note
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Repetitive rating: pulse width limited by maximum junction temperature.
Note 2a : Device mounted on
a glass-epoxy board (a)
Note 2b : Device mounted on
a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(unit : mm)
25.4 × 25.4 × 0.8
(unit : mm)
for GATE
for COLLECTOR
for EMITTER
for COLLECTOR
for EMITTER
for GATE
Note 3: ○ on lower right of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
※ Pb-Free Finish (Only a coating lead terminal) :
It is marking about an underline to a week of manufacture mark.
2
2007-04-23
GT8G136
Caution on handling
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
Caution in design
You should be design dV/dt value under Icp=150A is below 400 V/μs when IGBT turn off under Ta=70℃ .
You should be design to don’t flow collector current through terminal number 3 .
●definition of dv/dt
The slope of VCE from 30v to 90v (attached figure.1)
dv/dt = (90V-30V) / (⊿t)
= 60V / ⊿t
●waveform
●waveform (expansion)
IC
VCE
I
C(begin)
IC
(end)
VCE
90V
30V
0V, 0A
⊿t
dv/dt period
●Gate drive connection
5,6,7,8
RG
4
3
RGE
driver
1,2
3
2007-04-23
GT8G136
I
– V
I – V
C CE
C
CE
200
160
120
80
200
160
120
80
3.5
3.5
V
= 4.0 V
GE
V
= 4.0 V
3.0
GE
3.0
2.5
2.5
40
40
Common emitter
Common emitter
Ta = −10°C
Ta = 25°C
0
0
0
0
1
2
3
4
5
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C GE
C
CE
200
160
120
80
160
120
80
V
=4.0 V
GE
3.5
3.0
Ta = −10°C
70
25
2.5
40
40
Common emitter
Common emitter
V
= 5
4
Ta[ = 70°C
CE
0
0
0
0
1
2
3
4
5
1
2
3
5
Collector-emitter voltage
V
(V)
CE
Gate-emitter voltage
V
GE
(V)
V
, V – Q
CE GE
G
C – V
CE
600
500
400
300
200
100
0
6
5
4
3
2
1
0
10000
1000
100
C
ies
V
GE
Common emitter
= 0 V
V
GE
f = 1 MHz
Ta = 25°C
Common emitter
= 300 V
C
oes
V
CC
= 2.0 Ω
R
C
res
L
V
CE
Ta = 25°C
10
1
0
10
20
30
40
50
10
100
1000
Gate charge
Q
G
(nC)
Collector-emitter voltage
V
(V)
CE
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2007-04-23
GT8G136
Switching Time – I
C
Switching Time – R
G
10
10
Common emitter
V
V
= 300 V
= 3 V
CE
GE
I
= 150 A
C
t
off
Ta
t
on
t
f
1
3
t
f
t
on
Common emitter
t
off
V
V
= 300 V
= 3 V
CC
GE
t
r
R
= 51 Ω
G
t
r
Ta = 25°C
0.1
0
1
1
50
100
150
200
10
100
1000
Collector current
I
C
(A)
Gate resistance
R
G
(Ω)
Minimum Gate Drive Area
Maximum Operating Area
800
600
400
200
0
200
160
Ta
70
Ta
120
80
V
= 350 V
CM
<
Ta 70°C
40
0
V
= 3.0 V
GE
<
<
300 Ω
33 Ω
R
G
0
40
80
120
160
(A)
200
0
2
4
6
8
Gate-emitter voltage
V
(V)
GE
Peak collector current
I
CP
5
2007-04-23
GT8G136
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-04-23
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