GT8G133 [TOSHIBA]
Strobe Flash Applications; 频闪闪光灯应用
| 型号： | GT8G133 |
| 厂家： | 
TOSHIBA |
| 描述： | Strobe Flash Applications |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT8G133
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G133
Strobe Flash Applications
Unit: mm
•
•
•
•
Compact and Thin (TSSOP-8) package
Enhancement-mode
4-V gate drive voltage: V
= 4.0 V (min) (@I = 150 A)
C
GE
Peak collector current: I = 150 A (max)
C
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
Collector-emitter voltage
V
CES
V
GES
V
GES
400
± 6
± 8
DC
Gate-emitter voltage
V
Pulse
Pulse
Collector current
I
150
A
CP
(Note 1)
Collector power
dissipation（t＝10 s）
(Note 2a)
(Note 2b)
P
P
(1)
1.1
0.6
W
W
C
C
1.2.3 EMITTER
GATE
5.6.7.8 COLLECTOR
(2)
4
Junction temperature
T
j
150
°C
°C
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
―
―
JEITA
TOSHIBA
2-3R1G
Weight: 0.035 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Circuit Configuration
8
7
6
5
Thermal Characteristics
Characteristics
Symbol
Rating
114
Unit
°C/W
°C/W
Thermal resistance , junction to
R
R
(1)
th (j-a)
th (j-a)
ambient
(t = 10 s)
(Note2a)
Thermal resistance , junction to
(2)
208
ambient
(t = 10 s)
(Note 3)
(Note2b)
Marking
Part No. (or abbreviation code)
1
2
3
4
8G133
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
GT8G133
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
I
= ± 6 V, V
= 0
= 0
⎯
⎯
⎯
⎯
± 10
10
μA
μA
V
GES
GE
CE
CE
I
= 400 V, V
Collector cut-off current
CES
GE
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
V
= 1 mA, V = 5 V
CE
0.7
⎯
1.05
2.9
1.4
⎯
GE (OFF)
C
V
I
= 150 A, V
= 4 V
V
CE (sat)
C
GE
= 10 V, V = 0, f = 1 MHz
GE
C
V
pF
⎯
2500
⎯
ies
CE
Rise time
t
r
⎯
⎯
⎯
⎯
1.6
1.7
1.7
2.0
⎯
⎯
⎯
⎯
4 V
0
51 Ω
t
Turn-on time
Switching time
on
μs
<
V
: t 100 ns
IN
r
Fall time
t
f
<
t
100 ns
≒300V
f
<
Duty cycle 1%
Turn-off time
t
off
Note
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Repetitive rating: pulse width limited by maximum junction temperature.
Note 2a : Device mounted on
a glass-epoxy board (a)
Note 2b : Device mounted on
a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(unit : mm)
25.4 × 25.4 × 0.8
(unit : mm)
for GATE
for COLLECTOR
for EMITTER
for COLLECTOR
for EMITTER
for GATE
Note 3: ○ on lower right of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
※ Pb-Free Finish (Only a coating lead terminal) :
It is marking about an underline to a week of manufacture mark.
2
2006-11-02
GT8G133
Caution on handling
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
Caution in design
You should be design dV/dt value is below 400 V/μs when IGBT turn off.
●definition of dv/dt
The slope of vce from 30v to 90v (attached figure.1)
dv/dt = (90V-30V) / (⊿t)
= 60V / ⊿t
●waveform
●waveform (expansion)
IC
IC
(begin)
VCE
IC
(end)
VCE
90V
30V
0V, 0A
⊿t
dv/dt period
3
2006-11-02
GT8G133
I
– V
I
– V
CE
C
CE
C
200
160
120
80
200
160
120
80
4.0
3.5
3.0
4.0
3.5
3.0
V
= 5.0 V
V
= 5.0 V
GE
GE
2.5
2.5
40
40
Common emitter
Common emitter
Tc = 25°C
Tc = −10°C
0
0
0
1
2
3
4
5
5
5
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C CE
C
CE
200
160
120
80
200
160
120
80
V
= 5.0 V
GE
4.0
3.5
V
= 5.0 V
GE
4.0
3.5
3.0
2.5
3.0
2.5
40
40
Common emitter
Common emitter
Tc = 125°C
Tc = 70°C
0
0
0
0
1
2
3
4
1
2
3
4
5
Collector-emitter voltage
V
(V)
CE
Collector-emitter voltage
V
(V)
CE
I
– V
I – V
C GE
C
CE
200
160
120
80
160
120
80
Common emitter
Tc = −10°C
Tc = −10°C
Common emitter
V
= 4 V
GE
V
= 5 V
CE
125
25
70
25
125
70
40
40
0
0
0
0
1
2
3
4
1
2
3
4
5
Collector-emitter voltage
V
(V)
CE
Gate-emitter voltage
V
GE
(V)
4
2006-11-02
GT8G133
V
– T
V
– T
GE(OFF) C
CE (sat)
C
4
3
2
1
1.6
1.2
0.8
0.4
0
I
= 150 A
Common emitter
= 5 V
C
V
CE
= 1 mA
I
C
120
90
60
Common emitter
V
= 4 V
GE
0
−50
0
50
100
150
−50
0
50
100
150
Case temperature Tc (°C)
Case temperature Tc (°C)
V
, V – Q
CE GE G
C – V
CE
10000
600
500
400
300
200
100
0
6
5
4
3
2
1
C
ies
V
GE
1000
100
10
Common emitter
= 0 V
V
GE
f = 1 MHz
Tc = 25°C
Common emitter
= 300 V
C
oes
V
CC
= 2.0 Ω
C
res
R
L
V
CE
Tc = 25°C
0
50
0
10
20
30
40
1
10
100
1000
Collector-emitter voltage
V
(V)
Gate charge
Q
G
(nC)
CE
Switching Time – I
Switching Time – R
G
C
10
10
Common emitter
V
V
= 300 V
= 4 V
CE
GE
t
off
I
= 150 A
C
Tc = 25°C
t
f
t
on
1
3
t
f
t
on
Common emitter
t
off
V
V
= 300 V
= 4 V
CC
GE
t
r
R
= 51 Ω
G
t
r
Tc = 25°C
0.1
0
1
1
50
100
150
200
10
100
1000
Collector current
I
C
(A)
Gate resistance
R
G
(Ω)
5
2006-11-02
GT8G133
Minimum Gate Drive Area
Maximum Operating Area
200
160
800
600
400
200
0
Tc = 25°C
120
80
70
V
= 350 V
CM
<
Tc 70°C
40
0
V
= 4.0 V
GE
<
<
300 Ω
10 Ω
R
G
0
2
4
6
8
0
40
80
120
160
(A)
200
Gate-emitter voltage
V
(V)
GE
Peak collector current
I
CP
6
2006-11-02
GT8G133
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-02
相关型号：
GT8N101
TRANSISTOR 8 A, 1000 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
TOSHIBA
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