2SK3842 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications; 硅N沟道MOS型开关稳压器的应用, DC-DC转换器和电机驱动应用型号: | 2SK3842 |
厂家: | TOSHIBA |
描述: | Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications |
文件: | 总6页 (文件大小:217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
=4.6 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 93 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 60 V)
DSS
DS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
60
60
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±20
75
GSS
DC (Note 1)
I
D
<
Drain current
A
Pulse(t 1 ms)
I
300
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
125
322
W
D
AS
AR
Single pulse avalanche energy
JEDEC
JEITA
―
E
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
75
12.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
stg
−55 to150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Circuit Configuration
Thermal Characteristics
Characteristics
Symbol
Max
1.0
Unit
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: = 25 V, T = 25°C (initial), L = 78 μH, R = 25 Ω, I = 75 A
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
4
This transistor is an electrostatic-sensitive device. Please handle with
caution.
1
2
3
1
2006-11-17
2SK3842
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
60
35
2.0
⎯
46
⎯
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
GSS
GS
DS
DS
Drain cut-OFF current
I
= 60 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
V
= −20 V
⎯
⎯
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
5.8
⎯
V
mΩ
S
th
DS
GS
DS
D
R
= 10 V, I = 38 A
4.6
93
DS (ON)
⎪Y ⎪
D
= 10 V, I = 38 A
fs
D
C
C
12400
700
1100
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
DS
rss
C
⎯
oss
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
18
45
⎯
⎯
⎯
⎯
⎯
10 V
I
= 38 A
D
V
GS
V
OUT
0 V
Turn-ON time
t
on
R
L
= 0.79 Ω
Switching time
Fall time
ns
t
f
35
∼
V
30 V
DD
Turn-OFF time
t
200
196
<
off
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
48 V, V
= 10 V, I = 75 A
nC
DD
GS
D
Gate-source charge
Q
⎯
⎯
148
48
⎯
⎯
gs
Gate-drain (“miller”) charge
Q
gd
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1, Note 5)
I
1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
77
75
300
1
A
A
DR
Pulse drain reverse current
(Note 1,Note 5)
I
I
1
DRP
Continuous drain reverse current (Note 1, Note 5)
I
2
DR
A
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1,Note 5)
2
4
A
DRP
V
I
I
1 = 75 A, V
= 0 V
−1.7
⎯
V
DS2F
DR
GS
= 0 V,
GS
t
= 75 A, V
ns
nC
rr
DR
dI /dt = 50 A/μs
DR
Q
⎯
rr
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Marking
Part No. (or abbreviation code)
Lot No.
K3842
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
2SK3842
I
– V
I – V
D DS
D
DS
100
80
60
40
20
0
200
160
120
80
6.5
6.3
Common source
Tc = 25°C
pulse test
6.0
Common source
Tc = 25°C
pulse test
10
8.0
7.0
6.5
10
8.0
7.0
5.8
5.6
6.0
5.4
5.8
5.2
5.0
5.6
5.4
5.2
5.0
40
V
= 4.5 V
GS
V
= 4.5 V
GS
0
0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
V
– V
GS
DS
160
120
1.0
0.8
0.6
0.4
0.2
0
Common source
= 20 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
100
80
40
0
25
I
= 75 A
D
38
19
Tc = −55°C
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ − I
fs
R
− I
D
DS (ON) D
1000
100
10
100
10
1
Common source
= 20 V
Common source
Tc = 25°C
V
DS
Pulse test
Tc = −55°C
Pulse test
25
100
V
= 10 V
GS
1
1
10
100
(A)
1000
10
100
1000
1
Drain current
I
(A)
Drain current I
D
D
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2006-11-17
2SK3842
R
− Tc
I
− V
DS
DS (ON)
DR
10
8
1000
100
10
Common source
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
V
GS
I
= 75 A
D
10
5
3
38
19
6
4
2
1
V
= 0 V
GS
0
1
−80
−40
0
40
80
120
160
100
160
0
0.4
0.8
1.2
1.6
2.0
Case temperature
Tc (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
− Tc
th
DS
5
4
3
2
1
100000
10000
1000
C
iss
C
oss
Common source
= 0 V
Common source
= 10 V
DS
= 1 mA
V
GS
V
I
C
rss
f = 1 MHz
Tc = 25°C
D
Pulse test
100
0.1
0
−80
1
10
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic input/output characteristics
P
− Tc
D
150
120
90
60
30
0
25
20
50
V
DS
40
30
15
10
V
= 12 V
DD
24V
20
10
0
V
Common source
= 75 A
GS
48V
I
D
5
Tc = 25°C
Pulse test
0
80
240
320
0
40
80
120
0
160
Total gate charge
Q
g
(nC)
Case temperature
Tc (°C)
4
2006-11-17
2SK3842
r
th
− t
w
10
1
Duty = 0.5
0.2
0.1
P
DM
Single Pulse
0.1
0.05
t
0.02
T
0.01
Duty = t/T
R
= 1.0°C/W
th (ch-c)
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
– T
AS
ch
1000
500
400
300
200
100
0
500
300
I
max (pulsed) *
100 μs *
D
I
max (continuous)
D
1 ms *
100
30
10
5
3
DC operation
Tc = 25°C
25
50
75
100
125
150
1
Channel temperature (initial) Tch (°C)
*: Single nonrepetitive pulse
Tc = 25°C
0.5
Curves must be derated
linearly with increase in
temperature.
0.3
V
max
DSS
0.1
0.1
B
VDSS
1
10
100
15 V
Drain-source voltage
V
DS
(V)
I
AR
0 V
V
DD
V
DS
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS
2
R
V
= 25 Ω
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 25 V, L = 78 μH
B
VDSS
DD
5
2006-11-17
2SK3842
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-17
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