2SK3842_09 [TOSHIBA]

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications; 开关稳压器的应用, DC-DC转换器和电机驱动应用
2SK3842_09
型号: 2SK3842_09
厂家: TOSHIBA    TOSHIBA
描述:

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
开关稳压器的应用, DC-DC转换器和电机驱动应用

转换器 稳压器 开关 电机 驱动 DC-DC转换器
文件: 总6页 (文件大小:223K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SK3842  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
2SK3842  
Switching Regulator Applications, DC-DC Converter and  
Motor Drive Applications  
Unit: mm  
Low drain-source ON resistance: R  
=4.6 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 93 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
75  
GSS  
DC (Note 1)  
I
D
<
Drain current  
A
Pulse(t 1 ms)  
=
I
300  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
125  
322  
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
mJ  
SC-97  
2-9F1B  
(Note 2)  
TOSHIBA  
Avalanche current  
I
75  
12.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 0.74 g (typ.)  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
55 to150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Circuit Configuration  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.0  
Unit  
Notice:  
Please use the S1 pin for gate  
input signal return. Make  
sure that the main current  
flows into S2 pin.  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150.  
Note 2: = 25 V, T = 25°C (initial), L = 78 μH, R = 25 Ω, I = 75 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
4
This transistor is an electrostatic-sensitive device. Please handle with  
caution.  
1
2
3
1
2009-09-29  
2SK3842  
Electrical Characteristics (Note 4) (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±16 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
V
60  
35  
2.0  
46  
±10  
100  
μA  
μA  
GSS  
GS  
DS  
DS  
Drain cut-OFF current  
I
= 60 V, V  
= 0 V  
DSS  
GS  
GS  
GS  
V
V
I
I
= 10 mA, V  
= 10 mA, V  
= 0 V  
(BR) DSS  
(BR) DSX  
D
D
Drain-source breakdown voltage  
V
= −20 V  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
V
V
V
= 10 V, I = 1 mA  
4.0  
5.8  
V
mΩ  
S
th  
DS  
GS  
DS  
D
R
= 10 V, I = 38 A  
4.6  
93  
DS (ON)  
Y ⎪  
D
= 10 V, I = 38 A  
fs  
D
C
C
12400  
700  
1100  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
r
18  
45  
10 V  
I
= 38 A  
D
V
GS  
V
OUT  
0 V  
Turn-ON time  
t
on  
R
L
= 0.79 Ω  
Switching time  
Fall time  
ns  
t
f
35  
V
30 V  
DD  
Turn-OFF time  
t
200  
196  
<
off  
Duty 1%, t = 10 μs  
=
w
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
48 V, V  
= 10 V, I = 75 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
148  
48  
gs  
Gate-drain (“miller”) charge  
Q
gd  
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.  
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1, Note 5)  
I
1
70  
77  
75  
300  
1
A
A
DR  
Pulse drain reverse current  
(Note 1,Note 5)  
I
I
1
DRP  
Continuous drain reverse current (Note 1, Note 5)  
I
2
DR  
A
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1,Note 5)  
2
4
A
DRP  
V
I
I
1 = 75 A, V  
= 0 V  
1.7  
V
DS2F  
DR  
GS  
= 0 V,  
GS  
t
= 75 A, V  
ns  
nC  
rr  
DR  
dI /dt = 50 A/μs  
DR  
Q
rr  
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.  
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.  
Marking  
Note 4: A line under a Lot No. identifies the indication of product  
Labels.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
Part No. (or abbreviation code)  
K3842  
Please contact your TOSHIBA sales representative for details as to  
environmental matters such as the RoHS compatibility of Product.  
The RoHS is the Directive 2002/95/EC of the European Parliament  
and of the Council of 27 January 2003 on the restriction of the use of  
certain hazardous substances in electrical and electronic equipment.  
Lot No.  
Note 4  
2
2009-09-29  
2SK3842  
I
– V  
I – V  
D DS  
D
DS  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
6.5  
6.3  
Common source  
Tc = 25°C  
pulse test  
6.0  
Common source  
Tc = 25°C  
pulse test  
10  
8.0  
7.0  
6.5  
10  
8.0  
7.0  
5.8  
5.6  
6.0  
5.4  
5.8  
5.2  
5.0  
5.6  
5.4  
5.2  
5.0  
40  
V
= 4.5 V  
GS  
V
= 4.5 V  
GS  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
1
2
3
4
5
Drain-source voltage  
V
DS  
(V)  
Drain-source voltage  
V
DS  
(V)  
I
D
– V  
GS  
V
– V  
GS  
DS  
160  
120  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Common source  
= 20 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
100  
80  
40  
0
25  
I
= 75 A  
D
38  
19  
Tc = −55°C  
0
2
4
6
8
10  
0
4
8
12  
16  
20  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
Y ⎪ − I  
fs  
R
I  
D
DS (ON) D  
1000  
100  
10  
100  
10  
1
Common source  
= 20 V  
Common source  
Tc = 25°C  
V
DS  
Pulse test  
Tc = −55°C  
Pulse test  
25  
100  
V
= 10 V  
GS  
1
1
10  
100  
(A)  
1000  
10  
100  
1000  
1
Drain current  
I
(A)  
Drain current I  
D
D
3
2009-09-29  
2SK3842  
R
Tc  
I
V  
DS  
DS (ON)  
DR  
10  
8
1000  
100  
10  
Common source  
= 10 V  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
V
GS  
I
= 75 A  
D
10  
5
3
38  
19  
6
4
2
1
V
= 0 V  
GS  
0
1
80  
40  
0
40  
80  
120  
160  
100  
160  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Case temperature  
Tc (°C)  
Drain-source voltage  
V
(V)  
DS  
Capacitance – V  
V
Tc  
th  
DS  
5
4
3
2
1
100000  
10000  
1000  
C
iss  
C
oss  
Common source  
= 0 V  
Common source  
= 10 V  
DS  
= 1 mA  
V
GS  
V
I
C
rss  
f = 1 MHz  
Tc = 25°C  
D
Pulse test  
100  
0.1  
0
80  
1
10  
40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
Dynamic input/output characteristics  
P
Tc  
D
150  
120  
90  
60  
30  
0
25  
20  
50  
V
DS  
40  
30  
15  
10  
V
= 12 V  
DD  
24V  
20  
10  
0
V
Common source  
= 75 A  
GS  
48V  
I
D
5
Tc = 25°C  
Pulse test  
0
80  
240  
320  
0
40  
80  
120  
0
160  
Total gate charge  
Q
g
(nC)  
Case temperature  
Tc (°C)  
4
2009-09-29  
2SK3842  
r
th  
t  
w
10  
1
Duty = 0.5  
0.2  
0.1  
P
DM  
Single Pulse  
0.1  
0.05  
t
0.02  
T
0.01  
Duty = t/T  
R
= 1.0°C/W  
th (ch-c)  
0.01  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(S)  
w
Safe operating area  
E
– T  
AS  
ch  
1000  
500  
400  
300  
200  
100  
0
500  
300  
I
max (pulsed) *  
100 μs *  
D
I
max (continuous)  
D
1 ms *  
100  
30  
10  
5
3
DC operation  
Tc = 25°C  
25  
50  
75  
100  
125  
150  
1
Channel temperature (initial) Tch (°C)  
*: Single nonrepetitive pulse  
Tc = 25°C  
0.5  
Curves must be derated  
linearly with increase in  
temperature.  
0.3  
V
max  
DSS  
0.1  
0.1  
B
VDSS  
1
10  
100  
15 V  
Drain-source voltage  
V
DS  
(V)  
I
AR  
0 V  
V
DD  
V
DS  
Test circuit  
Wave form  
1
2
B
VDSS  
2
R
V
= 25 Ω  
G
=
LI ⋅  
Ε
AS  
V
DD  
= 25 V, L = 78 μH  
B
VDSS  
DD  
5
2009-09-29  
2SK3842  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2009-09-29  

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