2SK3845(F) [TOSHIBA]
2SK3845(F);
| 型号： | 2SK3845(F) |
| 厂家： | 
TOSHIBA |
| 描述： | 2SK3845(F) 晶体 转换器 稳压器 开关 晶体管 功率场效应晶体管 脉冲 电机 驱动 |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3845
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching Regulator, DC-DC Converter Applications and
Motor Drive Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 4.7 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 88 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 60 V)
DSS
DS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
60
60
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±20
70
GSS
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
280
125
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
JEDEC
JEITA
―
―
E
328
mJ
(Note 2)
Avalanche current
I
70
12.5
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
2-16C1B
T
150
ch
Weight: 4.6 g (typ.)
Storage temperature range
T
stg
−55 to150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
1.0
50
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: = 25 V, T = 25°C (initial), L = 91 μH, R = 25 Ω, I = 70 A
1
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-17
2SK3845
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= 0 V
⎯
⎯
60
35
2.0
⎯
44
⎯
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
GSS
GS
DS
DS
= 60V, V = 0 V
GS
Drain cut-OFF current
I
DSS
V
V
I
I
= 10mA, V
= 10mA, V
= 0 V
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
V
= −20 V
⎯
⎯
Gate threshold voltage
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
5.8
⎯
V
mΩ
S
th
DS
GS
DS
D
Drain-source ON resistance
R
= 10 V, I = 35 A
4.7
88
DS (ON)
D
⎪Y ⎪
fs
= 10 V, I = 35 A
Forward transfer admittance
Input capacitance
D
C
C
12400
700
1100
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
⎯
DS
rss
C
oss
⎯
Output capacitance
Rise time
10 V
GS
I = 35 A
D
t
⎯
⎯
⎯
⎯
⎯
17
44
⎯
⎯
⎯
⎯
⎯
r
V
V
OUT
0 V
Turn-ON time
Switching time
t
on
R
L
= 0.86 Ω
ns
Fall time
t
f
35
V
≒30 V
DD
<
Turn-OFF time
t
200
196
Duty 1%, t = 10 μs
off
w
Total gate charge
(gate-source plus gate-drain)
Q
g
∼
V
48 V, V
= 10 V, I = 70 A
GS D
nC
DD
Q
Gate-source charge
⎯
⎯
148
48
⎯
⎯
gs
Q
gd
Gate-drain (“miller”) charge
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
77
70
280
−1.5
⎯
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 70 A, V
= 70 A, V
= 0 V
V
DSF
DR
DR
GS
t
= 0 V,
ns
nC
rr
GS
dI /dt = 50 A/μs
Q
⎯
DR
rr
Marking
TOSHIBA
K3845
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
2SK3845
I
– V
I – V
D DS
D
DS
6
100
80
60
40
20
0
200
160
120
80
6
Common source
Tc = 25°C
Pulse test
10
Common source
Tc = 25°C
Pulse test
10
5
5.2
8
4.5
4.3
5
8
4.8
4.5
V
= 4 V
GS
4.3
40
V
= 4 V
GS
0
0
0.2
0.4
0.6
0.8
1.0
0
0
1
1
2
3
4
5
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
160
120
1.0
0.8
0.6
0.4
0.2
0
Common source
Tc = 25°C
Pulse test
Common source
= 20 V
V
DS
Pulse test
100
Tc = −55°C
80
40
25
70
35
I
= 18 A
D
0
0
2
4
6
8
4
8
12
16
20
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
R
− I
D
⎪Y ⎪ − I
fs
DS (ON)
D
100
10
1
1000
100
10
Common source
Tc = 25°C
Pulse test
Common source
= 20 V
V
DS
Pulse test
Tc = −55°C
25
100
V
= 10, 15 V
GS
1
1
1000
10
100
1000
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2006-11-17
2SK3845
R
− Tc
I
− V
DS
DS (ON)
DR
10
8
1000
100
10
Common source
= 10 V
V
GS
Pulse test
I
= 70 A
D
10
5
3
35
18
6
4
1
V
= 0 V
GS
2
Common source
Tc = 25°C
Pulse test
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
Capacitance – V
DS
100000
10000
1000
V
− Tc
th
5
4
3
2
Common source
= 10 V
V
DS
= 1 mA
I
D
Pulse test
C
iss
C
oss
Common source
1
0
V
= 0 V
GS
C
rss
f = 1 MHz
Tc = 25°C
100
0.1
1
10
100
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
Dynamic input/output characteristics
P
− Tc
D
25
50
150
V
DS
20
15
40
30
120
90
V
= 12 V
DD
24V
10
5
60
30
20
10
0
Common source
V
GS
48V
I
= 70 A
D
Tc = 25°C
Pulse test
0
320
0
80
240
0
40
80
120
160
0
160
Case temperature Tc (°C)
Total gate charge
Q
g
(nC)
4
2006-11-17
2SK3845
r
th
− t
w
10
1
Duty = 0.5
0.2
P
0.1
DM
Single Pulse
0.1
0.01
0.05
t
T
0.02
Duty = t/T
0.01
R
= 1.0°C/W
th (ch-c)
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
– T
AS
ch
1000
500
400
300
200
100
0
500
300
I
max (pulsed) *
D
100 μs *
1 ms *
I
max (continuous)
D
100
30
DC operation
Tc = 25°C
10
5
3
25
50
75
100
125
150
1
Channel temperature (initial) Tch (°C)
*: Single nonrepetitive pulse
Tc = 25°C
0.5
0.3
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
0.1
0.1
B
VDSS
1
10
100
15 V
0 V
Drain-source voltage
V
DS
(V)
I
AR
V
DD
V
DS
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS
2
R
V
= 25 Ω
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 25 V, L = 91 μH
B
VDSS
DD
5
2006-11-17
2SK3845
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-17
相关型号：
2SK3846
Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications
TOSHIBA
2SK3847
Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications
TOSHIBA
2SK3847(2-10S1B)
TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3847(2-10S2B)
TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power
TOSHIBA
2SK385
TRANSISTOR 10 A, 400 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明