2SK3843 [TOSHIBA]
Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications; 硅N沟道MOS型开关稳压器， DC / DC转换器和电机驱动应用
| 型号： | 2SK3843 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3843
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
2SK3843
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 2.7 mΩ (typ.)
DS (ON)
: |Y | = 120 S (typ.)
fs
z Low leakage current : I
= 10 μA (max) (V
= 40 V)
DSS
DS
z Enhancement mode : V = 1.5~3.0 V (V
= 10 V, I = 1 mA)
DS D
th
Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Symbol
Rating
Unit
V
40
40
V
V
DSS
Drain–gate voltage (R
Gate–source voltage
= 20 kΩ)
V
GS
DGR
V
±20
75
V
GSS
DC (Note 1)
Pulse (Note 1)
I
A
D
Drain current
I
300
125
A
DP
Drain power dissipation (Tc = 25°C)
P
W
D
JEDEC
JEITA
―
Single-pulse avalanche energy
E
I
542
mJ
AS
SC-97
2-9F1B
(Note 2)
Avalanche current
75
12.5
A
AR
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
−55~150
stg
Thermal Characteristics
4
Characteristic
Symbol
Max
Unit
1
Thermal resistance, channel to case
R
1.0
°C/W
th (ch–c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V = 25 V, T = 25°C (initial), L = 100 µH, I = 75 A, R = 25 Ω
DD
ch
AR
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-09-27
2SK3843
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
Drain cutoff current
I
V
V
= ±16 V, V = 0 V
DS
—
—
40
15
1.5
—
—
60
—
—
—
—
—
±10
10
—
μA
μA
GSS
GS
DS
I
= 40 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
—
(BR) DSS
(BR) DSX
D
D
Drain–source breakdown voltage
Gate threshold voltage
V
V
= −20 V
—
—
V
V
V
V
V
= 10 V, I = 1 mA
—
3.0
8.0
3.5
—
th
DS
GS
GS
DS
D
= 4.5 V, I = 38 A
4.3
D
Drain–source ON resistance
R
mΩ
S
DS (ON)
= 10 V, I = 38 A
2.7
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 38 A
120
11200
800
1350
D
C
C
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
DS
rss
C
—
oss
Rise time
t
—
—
—
12
40
65
—
—
—
r
I
= 38 A
D
10 V
V
GS
V
OUT
0 V
Turn–on time
Switching time
t
on
ns
Fall time
t
f
∼
V
20 V
DD
Turn–off time
t
—
—
260
210
—
—
<
off
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
(gate–source plus gate–drain)
V
≈ 32 V, V
= 10 V, I = 75 A
nC
DD
GS
D
Gate–source charge
Q
—
—
150
60
—
—
gs
Gate–drain (“Miller”) Charge
Q
gd
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
75
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
300
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 75 A, V
= 0 V
—
—
—
—
−1.5
—
V
DSF
DR1 GS
= 75 A, V = 0 V
GS
t
100
120
ns
nC
rr
DR
dI /dt = 30 A/μs
DR
Q
—
rr
Marking
Part No. (or abbreviation code)
Lot No.
K3843
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-09-27
2SK3843
I
– V
I – V
D DS
D
DS
100
80
60
40
20
0
200
160
120
80
5
4.75
4.5
5
4.75
6
10
10
6
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
8
8
4.5
4.25
4
4.25
3.75
4
3.5
3.75
3.5
40
V
= 3.25 V
GS
V
= 3.25 V
GS
4
0
0
0.1
0.2
0.3
0.4
0.5
0
0
1
1
2
3
5
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
200
160
120
80
1.0
0.8
0.6
0.4
0.2
0
Common source
= 10 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
100
Tc = −55°C
25
I
= 75 A
D
40
38
19
0
0
2
4
6
8
10
4
8
12
16
20
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
R
− I
D
DS (ON)
⎪Y ⎪ − I
fs
D
100
10
1
1000
100
10
Common source
Tc = 25°C
Common source
= 10 V
V
DS
Pulse test
Pulse test
Tc = −55°C
100
25
V
= 4.5 V
GS
10
1
1
10
100
1000
10
100
1000
Drain current
I
(A)
Drain current
I
(A)
D
D
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2006-09-27
2SK3843
R
− Tc
I
− V
DR DS
DS (ON)
10
8
1000
100
10
Common source
Pulse test
Common source
Tc = 25°C
Pulse test
10
38
6
5
19
V
= 4.5 V
= 10 V
GS
3
4
1
I
= 75, 38, 19 A
D
V
GS
V
= 0, −1 V
GS
2
0
−80
1
−40
0
40
80
120
160
0
−0.4
−0.8
−1.2
−1.6
−2.0
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
C − V
V
− Tc
th
DS
100000
10000
5
4
3
2
1
0
Common source
= 10 V
V
I
DS
= 1 mA
D
Pulse test
C
iss
1000
100
C
oss
C
rss
Common source
V
= 0 V
GS
f = 1 MHz
Tc = 25°C
0.1
1
10
100
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain−source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
− Tc
D
150
120
90
60
30
0
40
16
Common source
= 75 A
Tc = 25°C
I
D
V
Pulse test
DS
8
30
20
10
12
8
V
= 32 V
DD
16
4
0
V
GS
0
0
0
40
80
120
160
100
200
300
400
500
Case temperature Tc (°C)
Total gate charge
Q
g
(nC)
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2006-09-27
2SK3843
r
th
− t
w
10
1
Duty = 0.5
0.2
0.1
P
DM
Single Pulse
0.1
0.05
t
0.02
T
0.01
Duty = t/T
R
= 1.0°C/W
th (ch-c)
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
– T
AS
ch
1000
100
10
1000
800
600
400
200
0
I
max (Pulse) *
D
1 ms *
10 ms *
I
max (Continuous)
D
DC operation
Tc = 25°C
25
50
75
100
125
ch
150
1
*
Single nonrepetitive pulse
Channel temperature (initial)
T
(°C)
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
B
VDSS
15 V
V
max
DSS
0.1
0.1
I
AR
0 V
1
10
100
V
V
DD
DS
B
Drain−source voltage
V
(V)
DS
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 25 V, L = 100 μH
B
VDSS
DD
5
2006-09-27
2SK3843
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-09-27
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