2SK3403_06 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator Applications; 硅N沟道MOS型开关稳压器的应用
| 型号： | 2SK3403_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator Applications |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3403
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3403
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: |Y | = 5.8 S (typ.)
= 0.29 Ω (typ.)
DS (ON)
fs
Low leakage current: I
= 100 μA (max) (V
= 450 V)
DSS
DSS
Enhancement mode: V = 3.0~5.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
450
450
±30
13
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
52
DP
Drain power dissipation (Tc = 25°C)
P
100
W
D
AS
AR
JEDEC
JEITA
―
―
Single pulse avalanche energy
E
350
mJ
(Note 2)
Avalanche current
I
13
10
A
TOSHIBA
2-10S1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 1.5 g (typ.)
T
150
ch
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
1.25
83.3
°C/W
°C/W
th (ch-c)
JEDEC
JEITA
―
―
R
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
TOSHIBA
2-10S2B
Note 2:
V = 90 V, T = 25°C (initial), L = 3.46 mH, R = 25 Ω,
DD ch G
I
= 13 A
Weight: 1.5 g (typ.)
AR
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-06
2SK3403
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
I
= 10 μA, V
= 0 V
(BR) GSS
G
DS
I
V
= 450 V, V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
450
3.0
⎯
⎯
(BR) DSS
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
5.0
0.4
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 6 A
0.29
5.8
1600
17
Ω
S
DS (ON)
⎪Y ⎪
D
= 10 V, I = 6 A
3.0
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
220
⎯
oss
Rise time
t
r
⎯
⎯
⎯
⎯
28
45
10
56
⎯
⎯
⎯
⎯
10 V
I
= 6 A
D
V
GS
0 V
Output
Turn-on time
Switching time
t
on
R
=
L
ns
33.3 Ω
Fall time
t
f
∼
V
200 V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
off
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
34
19
15
⎯
⎯
⎯
g
∼
V
360 V, V
= 10 V, I = 13 A
nC
Q
DD
GS
D
gs
gd
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
13
52
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 13 A, V
= 13 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
300
3.4
ns
μC
rr
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
K3403
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
2SK3403
I
– V
I
– V
DS
D
DS
D
10
8
20
16
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
15
10
8.5
7.5
10
8.25
7.25
8
15
7.0
6
12
8
7.5
4
6.5
7
6.5
V
= 6.0 V
4
2
GS
V
= 6 V
GS
0
0
0
0
2
4
6
8
10
10
20
30
40
50
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
30
20
10
0
10
8
Common source
= 20 V
Pulse test
Common source
Tc = 25°C
Pulse test
V
DS
6
25
I
= 13 A
D
4
Tc = −55°C
100
6
3
2
0
0
3
6
9
12
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
D
(V)
GS
⎪Y ⎪ – I
fs
R
– I
DS (ON)
D
50
10
10
Common source
Tc = 25°C
Common source
V
= 20 V
DS
Pulse test
Pulse test
Tc = −55°C
25
100
1
1
V
= 10 V
GS
15
0.1
0.1
0.1
0.1
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2006-11-06
2SK3403
R
– Tc
I
– V
DS
DS (ON)
DR
1.0
0.8
0.6
0.4
0.2
0
100
10
1
Common source
= 10 V
Common source
Tc = 25°C
V
GS
6
Pulse test
Pulse test
I
= 13 A
D
3
10
3
1
V
= 0, −1 V
GS
V
5
0.1
0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain-source voltage
(V)
DS
Capacitance – V
V
– Tc
th
DS
10000
1000
100
10
6
5
4
3
2
1
Common source
= 10 V
V
DS
= 1 mA
I
D
Pulse test
C
iss
C
oss
Common
source
= 0 V
C
rss
V
GS
f = 1 MHz
Tc = 25°C
0
−80
−40
0
40
80
120
160
1
0.1
Case temperature Tc (°C)
1
10
100
1000
Drain-source voltage
V
DS
(V)
P
– Tc
Dynamic input/output characteristics
D
200
160
500
20
16
12
8
Common source
I
= 13 A
D
Tc = 25°C
Pulse test
400
300
200
100
0
V
V
= 90 V
DD
DS
120
80
180
360
V
GS
4
40
0
0
50
0
40
80
120
160
200
0
10
20
30
40
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
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2006-11-06
2SK3403
r
th
– t
w
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
P
DM
0.1
0.05
t
0.05
0.03
0.02
0.01
T
Single pulse
Duty = t/T
R
= 1.25°C/W
th (ch-c)
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
AS
– T
ch
400
100
I
max (pulse) *
D
50
30
300
200
100
0
I
max
D
(continuous)
100 μs *
10
1 ms *
5
3
DC operation
Tc = 25°C
1
0.5
0.3
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
* Single nonrepetitive pulse
Tc = 25°C
0.1
Curves must be derated linearly
with increase in temperature.
0.05
0.03
V
max
300
DSS
B
VDSS
15 V
3
10
30
100
V
1000
I
AR
−15 V
Drain-source voltage
(V)
DS
V
V
DS
DD
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS
2
R
V
= 25 Ω
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 3.46 mH
B
VDSS
DD
5
2006-11-06
2SK3403
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-06
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