2SK3405 [NEC]
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE; 切换N沟道功率MOSFET工业用型号: | 2SK3405 |
厂家: | NEC |
描述: | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
文件: | 总8页 (文件大小:1386K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
PART NUMBER
PACKAGE
2SK3405
2SK3405-ZK
2SK3405-ZJ
TO-220AB
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
FEATURES
• 4.5-V drive available
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
20
V
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
PT1
48
192
A
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
1.5
W
W
°C
°C
PT2
50
Tch
150
Storage Temperature
Tstg
−55 to +150
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published April 2001 NS CP(K)
D14639EJ2V0DS00 (2nd edition)
1999, 2000
©
The mark # shows major revised points.
Printed in Japan
2SK3405
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
Drain Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
MIN.
TYP.
MAX.
10
UNIT
µA
µA
V
Gate Leakage Current
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VGS = 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 24 A
VGS = 10 V, ID = 24 A
VGS = 4.5 V, ID = 24 A
VDS = 10 V
10
Gate Cut-off Voltage
1.5
2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
12.5
S
6.5
9.9
1800
770
400
21
9.0
mΩ
mΩ
pF
pF
pF
ns
14.0
Input Capacitance
VGS = 0 V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
f = 1 MHz
VDD = 10 V , ID = 24 A
VGS(on) = 10 V
13
ns
RG = 10 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
64
ns
25
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG
VDD = 16 V
VGS = 10 V
ID = 48 A
34
nC
nC
nC
V
QGS
QGD
VF(S-D)
trr
6.6
11
IF = 48 A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/µs
1.0
38
ns
Qrr
29
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
GS
R
L
90 %
V
GS
10 %
Wave Form
0
RG
PG.
V
DD
50 Ω
PG.
V
DD
V
DS
90 %
10 %
V
0
GS
V
DS
0
Wave Form
t
r
t
d(on)
td(off)
t
f
τ
t
on
toff
τ = 1µs
Duty Cycle ≤ 1 %
2
Data Sheet D14639EJ2V0DS
2SK3405
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
200
1000
100
Pulsed
DS = 10 V
V
GS =10 V
7.0 V
V
150
100
4.5 V
10
1
T
ch = −50˚C
−25˚C
25˚C
50
0
75˚C
150˚C
Pulsed
0.1
2
4
5
6
0
3
1
DS - Drain to Source Voltage - V
1
2
3
V
GS - Gate to Source Voltage - V
V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
10
3.0
V
DS = 10 V
V
DS = 10 V
Pulsed
I
D
= 1 mA
2.5
2.0
1.5
T
ch = 150˚C
75˚C
25˚C
1
−25˚C
1.0
0.5
0
−50˚C
0.1
0.01
0.1
1
10
100
−50
0
50
100
150
ID - Drain Current - A
T
ch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
30
Pulsed
Pulsed
15
10
5
I
D
= 48 A
24 A
20
10 A
V
GS = 10 V
7.0 V
4.5 V
10
0
0
0.1
1
10
100
1000
5
10
15
20
0
I
D - Drain Current - A
VGS - Gate to Source Voltage - V
3
Data Sheet D14639EJ2V0DS
2SK3405
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
1000
100
Pulsed
16
14
12
10
V
GS = 10 V
V
GS = 4.5 V
4.5 V
0 V
7.0 V
10 V
10
1
8
6
4
0.1
2
0
−50
0.01
0
1.5
1
0.5
0
100
150
50
V
SD
- Source to Drain Voltage - V
T
ch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
100
1000
V
GS = 0 V
f = 1 MHz
t
d(off)
100
10
1
C
iss
t
f
t
d(on)
t
r
C
oss
rss
C
V
DD = 10 V
GS = 10 V
= 10 Ω
V
R
G
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
18
15
12
9
12
1000
100
µ
di/dt = 100 A/ s
GS = 0 V
ID = 48 A
V
V
DD = 16 V
10 V
4 V
8
V
GS
6
4
0
10
1
3
V
DS
0
0
10
20
30
40
0.1
1
10
100
Q
G
- Gate Charge - nC
I
SD - Diode Forward Current - A
4
Data Sheet D14639EJ2V0DS
2SK3405
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
60
50
100
80
60
40
40
30
20
10
0
20
0
0
20
40 60
80
120 140 160
100
20 40
60
80 100 120 140 160
0
T
ch - Channel Temperature - ˚C
T
C
- Case Temperature - ˚C
#
FORWARD BIAS SAFE OPERATING AREA
1000
100
I
D(pulse)
PW
=
10
µ
s
100
Limited
µ
s
300
ms
= 10IDV()DC)
RDS(on)
(@V
GS
µ
s
1
P
3
o
ms
w
er Dissipation Lmited
10
ms
10
DC
TC
= 25˚C
Single Pulse
1
0.1
1
10
100
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 2.5˚C/W
1
0.1
0.01
Single Pulse
100 1000
µ
10
1 m
10 m
100 m
1
10
100
µ
PW - Pulse Width - sec
5
Data Sheet D14639EJ2V0DS
2SK3405
PACKAGE DRAWINGS (Unit: mm)
1)TO-220AB (MP-25)
2)TO-263 (MP-25ZK)
4.8 MAX.
1.3 0.2
10.0±0.2
4.45±0.2
1.3±0.2
10.6 MAX.
10.0
0.4
φ
3.6 0.2
No plating
8.4 TYP.
4
0.025 to
0.25
4
1
2 3
1.3 0.2
0.7±0.15
2.54
0.25
1
2
3
0.75 0.1
0.5 0.2
2.8 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3.Source
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
(10)
Drain
1.3 0.2
4
Body
Diode
Gate
Gate
Protection
Diode
1.4 0.2
0.7 0.2
Source
0.5 0.2
2.54 TYP.
2.54 TYP.
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14639EJ2V0DS
2SK3405
[MEMO]
7
Data Sheet D14639EJ2V0DS
2SK3405
•
The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
相关型号:
2SK3405-AZ
Power Field-Effect Transistor, 48A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
NEC
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