2SK3407 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV); 东芝场效应晶体管硅N沟道MOS型（ PIE - MOSV ）
| 型号： | 2SK3407 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regulator Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
= 0.48 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 7.5 S (typ.)
fs
Low leakage current: I
= 100 µA (max) (V
= 450 V)
DSS
DS
= 10 V, I = 1 mA)
Enhancement-mode: V = 2.4~3.4 V (V
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
450
450
±30
10
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
40
DP
Drain power dissipation (Tc = 25°C)
P
40
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
222
mJ
SC-67
2-10R1B
(Note 2)
TOSHIBA
Avalanche current
I
10
4
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 1.9 g (typ.)
T
150
ch
Storage temperature range
T
-55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
3.125
62.5
°C/W
°C/W
th (ch-c)
th (ch-a)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V = 90 V, T = 25°C (initial), L = 3.7 mH, R = 25 W, I = 10 A
DD ch AR
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-12
2SK3407
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
¾
±30
¾
¾
¾
±10
¾
mA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
I = ±10 mA, V = 0 V
G DS
(BR) GSS
I
V
= 450 V, V = 0 V
GS
¾
100
¾
mA
V
DSS
DS
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
GS
450
2.4
¾
¾
(BR) DSS
D
V
V
V
V
= 10 V, I = 1 mA
¾
3.4
0.65
¾
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 5 A
0.48
7.5
1400
240
590
W
S
DS (ON)
D
ïY ï
fs
= 10 V, I = 5 A
3.5
¾
D
C
C
¾
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
¾
¾
DS
rss
C
oss
¾
¾
Rise time
t
¾
¾
¾
35
50
80
¾
¾
¾
r
10 V
I
= 5 A
D
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
on
R
L
= 40 W
Fall time
t
f
~
-
V
200 V
DD
<
Duty 1%, t = 10 ms
w
Turn-off time
t
¾
¾
260
35
¾
off
Total gate charge
Q
¾
g
(gate-source plus gate-drain)
~
-
V
360 V, V
= 10 V, I = 10 A
nC
DD
GS
D
Gate-source charge
Q
Q
¾
¾
19
16
¾
¾
gs
Gate-drain “miller” charge
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
10
40
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 10 A, V
= 10 A, V
= 0 V
¾
-1.7
¾
V
DSF
DR
DR
GS
GS
t
= 0 V,
280
2.7
ns
mC
rr
dI /dt = 100 A/ms
Q
¾
DR
rr
Marking
※ Lot Number
Type
K3407
Month (starting from alphabet A)
※
Year
(last number of the christian era)
2
2002-08-12
2SK3407
I
– V
I – V
D
D
DS
10
DS
10
8
20
16
Common source
Tc = 25°C
Pulse test
15
Common source
Tc = 25°C
Pulse test
15
10
6.75
6
6.5
5.75
5.5
6
12
8
6.25
6
4
5.25
5
5.5
4
2
V
GS
= 4.5 V
V
GS
= 4.5 V
0
0
0
2
4
6
8
10
0
10
20
30
40
50
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
V
– V
GS
I
– V
GS
DS
D
20
16
12
8
10
8
Common source
Common source
Tc = 25°C
Pulse test
V
= 20 V
DS
Pulse test
I
= 10 A
D
6
4
25
5
Tc = -55°C
100
2
4
2.5
0
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
V
(V)
Gate-source voltage
V
D
(V)
GS
GS
R
– I
DS (ON)
ïY ï – I
fs
D
5
1
30
10
Common source
Tc = 25°C
Common source
V
= 20 V
DS
Pulse test
Pulse test
Tc = -55°C
25
100
3
1
V
GS
= 10, 15 V
0.3
0.1
0.1
0.1
0.3
1
3
10
(A)
30
100
1
10
100
Drain current
I
D
Drain current
I
D
(A)
3
2002-08-12
2SK3407
R
– Tc
I
– V
DR DS
DS (ON)
2.0
1.6
1.2
0.8
0.4
0
100
10
Common source
Common source
Tc = 25°C
Pulse test
V
= 10 V
GS
Pulse test
I
= 10 A
D
1
2.5
10
5
3
0.1
0.01
1
V
GS
= 0, -1 V
-0.8
0
-0.2
-0.4
-0.6
-1
(V)
-1.2
-80
-40
0
40
80
120
160
Case temperature Tc
(°C)
Drain-source voltage
V
DS
Capacitance – V
V
– Tc
th
DS
3000
1000
6
5
4
3
2
1
Common source
= 10 V
V
D
DS
C
iss
I
= 1 mA
Pulse test
300
100
C
oss
30
10
Common source
= 0 V
V
GS
f = 1 MHz
Tc = 25°C
C
rss
3
0.1
0.3
1
3
10
30
100
300
0
-80
-40
0
40
80
120
160
Drain-source voltage
V
(V)
DS
Case temperature Tc
(°C)
P
– Tc
Dynamic input/output characteristics
D
50
40
500
20
16
12
8
Common source
I
= 10 A
D
Tc = 25°C
Pulse test
400
300
200
100
0
V
DS
V
DD
= 90 V
30
20
180
360
V
GS
4
10
0
0
0
40
80
120
160
(°C)
200
0
10
20
30
40
(nC)
50
Case temperature Tc
Total gate charge
Q
g
4
2002-08-12
2SK3407
r
th
– t
w
10
5
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.03
0.02
0.01
P
DM
Single pulse
0.01
t
0.005
0.003
T
Duty = t/T
th (ch-c)
R
= 3.125°C/W
0.001
10 m
100 m
1 m
10 m
Pulse width
100 m
1
10
t
w
(S)
400
Safe operating area
E
– T
AS ch
100
10
1
I
max (pulse) *
D
300
200
100
0
I
max
D
100 ms *
(continuous)
1 ms *
DC operation
Tc = 25°C
25
50
75
100
125
(°C)
150
0.1
Channel temperature (initial)
T
ch
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
(V)
DSS
B
VDSS
15 V
0.01
I
1
10
100
1000
AR
-15 V
Drain-source voltage
V
DS
V
V
DS
DD
Test circuit
Wave form
æ
ö
÷
÷
ø
1
2
ç
B
VDSS
VDSS
R
V
= 25 W
DD
G
=
×L×I
×
Ε
AS
ç
2
-
= 90 V, L = 3.7 mH
B
V
DD
è
5
2002-08-12
2SK3407
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-08-12
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