2SK3405 [TYSEMI]

4.5-V drive available Low on-state resistance RDS( = 9.0m MAX. (VGS = 10 V, ID = 24 A); 4.5 - V可驱动低通态电阻RDS （ = 9.0米MAX 。（ VGS = 10V ， ID = 24 A）

2SK3405


型号：	2SK3405
厂家：	TY Semiconductor Co., Ltd
描述：	4.5-V drive available Low on-state resistance RDS( = 9.0m MAX. (VGS = 10 V, ID = 24 A) 4.5 - V可驱动低通态电阻RDS （ = 9.0米MAX 。（ VGS = 10V ， ID = 24 A）晶体晶体管开关脉冲驱动局域网
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Product specification

2SK3405

TO-263

Unit: mm

+0.2

4.57

-0.2

Features

+0.1

1.27

-0.1

4.5-V drive available

Low on-state resistance

R^DS(on)1= 9.0m MAX. (V^GS= 10 V, I^D= 24 A)

Low gate charge

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

Q^G= 34 nC TYP. (I^D= 48 A, V^DD= 16V, V^GS= 10 V)

Built-in gate protection diode

Surface mount device available

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

V

20

20

Gate to source voltage

V

A

48

Drain current

I^dp*

A

192

50

Power dissipation

T^C=25

T^A=25

P^D

W

1.5

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

10

Unit

A

V^DS=20V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

VDS=10V,ID=24A

V^GS=10V,I^D=24A

V^GS=4.5V,I^D=24A

10

A

1.5

2.5

V

Forward transfer admittance

12.5

S

R^DS(on)1

R^DS(on)2

C^iss

6.5

9.9

1800

770

400

21

9.0

m

Drain to source on-state resistance

14.0

m

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V^DS=10V,V^GS=0,f=1MHZ

Coss

C^rss

t^on

t^r

13

I^D=24A,V^GS(on)=10V,R^G=10 ,V^DD=10V

Turn-off delay time

Fall time

t^off

64

tf

25

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

34

I^D=48A, V^DD= 16 V, V^GS= 10 V

Q^GS

Q^GD

6.6

11

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