2SK3404-AZ [NEC]
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3404
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3404 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
PART NUMBER
2SK3404
PACKAGE
TO-220AB
2SK3404-ZK
2SK3404-ZJ
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
FEATURES
• 4.5-V drive available
• Low on-state resistance
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low gate charge
QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
30
V
V
±20
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
PT1
±40
±160
A
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
1.5
W
W
°C
°C
PT2
40
Channel Temperature
Storage Temperature
Tch
150
Tstg
−55 to +150
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2001 NS CP(K)
Printed in Japan
D14638EJ2V0DS00 (2nd edition)
The mark ★ shows major revised points.
1999, 2000
©
2SK3404
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
MIN.
TYP.
MAX.
10
UNIT
Drain Leakage Current
IDSS
µA
µA
Gate Leakage Current
IGSS
±10
2.5
Gate to Source Cut-off Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V
1.5
8.0
V
S
Drain to Source On-state Resistance
11
15
14
21
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
1400
410
180
20
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
VGS = 0 V
f = 1 MHz
VDD = 15 V , ID = 20 A
VGS(on) = 10 V
9
Turn-off Delay Time
Fall Time
td(off)
tf
50
RG = 10 Ω
14
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG
VDD = 24 V
25
QGS
QGD
VF(S-D)
trr
VGS = 10 V
5.0
7.0
1.0
31
ID = 40 A
IF = 40 A, VGS = 0 V
IF = 40 A, VGS = 0 V
di/dt = 100 A/µs
ns
nC
Qrr
28
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
GS
R
L
90%
V
GS
10%
Wave Form
0
RG
PG.
V
DD
50 Ω
PG.
V
DD
V
DS
90%
10%
V
0
GS
V
DS
0
Wave Form
t
r
t
d(on)
td(off)
t
f
τ
t
on
toff
τ = 1µs
Duty Cycle ≤ 1%
2
Data Sheet D14638EJ2V0DS
2SK3404
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
1000
100
Pulsed
DS = 10 V
V
V
GS =10 V
150
100
7.0 V
4.5 V
10
1
T
ch = −50˚C
−25˚C
25˚C
75˚C
50
0
150˚C
Pulsed
3
0.1
2
0
1
4
5
6
1
2
3
V
DS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
3.0
2.5
V
DS = 10 V
= 1 mA
T
ch = 150˚C
75˚C
I
D
25˚C
−25˚C
−50˚C
2.0
1.5
10
1
1.0
0.5
0
VDS = 10 V
Pulsed
0.1
0.1
1
10
100
−50
0
50
100
150
I
D - Drain Current - A
T
ch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
30
20
Pulsed
Pulsed
I
D
= 48 A
24 A
10 A
15
10
V
GS = 4.5 V
10
0
7.0 V
10 V
5
0.1
1
10
100
1000
5
10
15
20
0
I
D - Drain Current - A
VGS - Gate to Source Voltage - V
3
Data Sheet D14638EJ2V0DS
2SK3404
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
30
Pulsed
ID = 20 A
25
VGS = 10 V
4.5 V
V
GS = 4.5 V
20
15
7.0 V
10 V
10
1
0 V
10
0.1
5
0
0.01
0
−50
0
1.5
100
150
50
1
0.5
T
ch - Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
1000
V
GS = 0 V
f = 1 MHz
C
iss
t
f
100
10
1
t
d(off)
C
oss
t
d(on)
C
rss
t
r
100
10
V
DD = 15 V
GS = 10 V
= 10 Ω
V
R
G
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
30
25
20
15
10
5
1000
100
12
µ
di/dt = 100 A/ s
GS = 0 V
I
D
= 40 A
V
V
DD = 24 V
15 V
8
V
GS
6 V
10
1
4
V
DS
0
0
0.1
1
10
100
30
0
10
20
I
SD - Diode Forward Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D14638EJ2V0DS
2SK3404
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
50
40
100
80
60
40
30
20
10
0
20
0
0
20
40 60
80
120 140 160
100
20 40
60
80 100 120 140 160
0
T
ch - Channel Temperature - ˚C
T
C
- Case Temperature - ˚C
★
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
PW = 10
100
10
1
µ
s
Limited
= 10 V)
100
I
D(DC)
GS
RDS(on)
(@V
µ
300
s
P
µ
o
s
1 ms
w
er Dissipation Limite
3 ms
10 m
DC
T
C
= 25˚C
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 3.13˚C/W
0.1
0.01
Single Pulse
100 1000
µ
10
1 m
10 m
100 m
1
10
100
µ
PW - Pulse Width - sec
5
Data Sheet D14638EJ2V0DS
2SK3404
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-263 (MP-25ZK)
★
4.8 MAX.
1.3±0.2
10.0±0.2
10.6 MAX.
10.0 TYP.
4.45±0.2
1.3±0.2
0.4
φ
3.6±0.2
No plating
8.4 TYP.
4
0.025 to
0.25
4
1
2 3
1.3±0.2
0.7±0.15
2.54
0.25
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.8±0.2
1
2
3
2.54 TYP.
1.Gate
2.Drain
2.Drain
3.Source
4.Fin (Drain)
3.Source
4.Fin (Drain)
★
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
10 TYP.
4
Drain
1.3±0.2
Body
Diode
Gate
1
2
3
Gate
Protection
Diode
1.4±0.2
Source
0.7±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14638EJ2V0DS
2SK3404
[MEMO]
7
Data Sheet D14638EJ2V0DS
2SK3404
•
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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•
•
•
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M8E 00. 4
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