2SD2638 [TOSHIBA]
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type; 东芝晶体管NPN硅三重扩散台面型
| 型号： | 2SD2638 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2638
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638
Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.
Unit: mm
·
·
·
High voltage: V
= 1700 V
CBO
Low saturation voltage: V
= 5 V (max)
CE (sat)
High speed: t = 0.8 µs (max)
f
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
1700
750
5
V
V
V
DC
Collector current
Pulse
I
7
C
A
I
14
CP
Base current
I
3.5
A
B
Collector power dissipation
Junction temperature
Storage temperature range
P
50
W
°C
°C
C
JEDEC
JEITA
―
―
T
150
-55~150
j
T
stg
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Equivalent Circuit
2. Collector
3. Emitter
1. Base
50 W (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= 1700 V, I = 0
¾
66
5
¾
¾
1
200
¾
25
7.5
5
mA
mA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 5 V, I = 0
C
EBO
(BR) EBO
Emitter-base breakdown voltage
V
I
= 400 mA, I = 0
¾
E
C
h
FE
h
FE
(1)
(2)
V
V
= 5 V, I = 1 A
8
¾
CE
CE
C
DC current gain
= 5 V, I = 5.5 A
4.5
¾
¾
¾
¾
¾
¾
¾
¾
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
V
I
I
I
= 5.5 A, I = 1.2 A
¾
V
V
CE (sat)
BE (sat)
C
C
F
B
V
= 5.5 A, I = 1.2 A
1.0
1.3
2
1.5
2
B
V
= 7 A
V
F
f
V
V
= 10 V, I = 0.1 A
¾
¾
9
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
125
7
ob
E
Storage time
Switching time
t
stg
I
f
= 5.5 A, I
= 1.1 A,
CP
H
B1 (end)
ms
= 15.75 kHz
Fall time
t
0.4
0.8
f
1
2001-11-27
2SD2638
I
– V
CE
C
10
8
Common emitter
Tc = 25°C
2
1.8
1.6
1.4
1.2
1.0
0.8
6
4
0.6
0.4
0.2
I
= 0.1 A
B
2
0
0
2
4
6
8
10
Collector-emitter voltage
V
(V)
CE
h
FE
– I
C
300
100
Common emitter
= 5 V
V
CE
30
10
Tc = 100°C
25
1
-25
3
1
0.01
0.03
0.1
0.3
3
10
30
Collector current
I
C
(A)
I
– V
F
F
I
– V
BE
C
10
8
10
8
Common emitter
CE
Open base
V
= 5 V
6
4
6
4
Tc = 100°C
-25
2
0
2
0
Tc = 100°C
-25
25
25
1.2
Instantaneous forward voltage
0
0.2
0.4
0.6
0.8
1
1.2
0
0.4
0.8
1.6
2
V
(V)
Base-emitter voltage
V
(V)
F
BE
2
2001-11-27
2SD2638
V
– I
C
V
– I
CE (sat)
CE
B
10
8
10
Common emitter
Tc = -25°C
Common emitter
Tc = -25°C
8
6
5
3
4
6
4
1
0.5
0.3
I
/I = 2
C B
2
0
0.1
3
3.5
4
4.5
5
I
= 5.5 A
C
0.05
0.2
1
3
5
10
30 50 100
0.4
0.8
1.2
1.6
2
2.4
2.4
2.4
0
Collector current
I
C
(A)
Base current
I
(A)
B
V
– I
V
– I
C
CE
B
CE (sat)
8
10
8
10
Common emitter
Common emitter
Tc = 25°C
Tc = 25°C
5
3
6
6
4
1
4
0.5
0.3
3.5
4.5
I
/I = 2
C B
2
0
0.1
3
4
5
I
= 5.5 A
C
0.05
0.2
1
3
5
10
30 50 100
0
0.4
0.8
1.2
1.6
2
Collector current
I
C
(A)
Base current
I
B
(A)
V
– I
B
CE
V
– I
C
CE (sat)
8
10
8
10
Common emitter
Tc = 100°C
Common emitter
Tc = 100°C
5
3
6
6
4
1
4
0.5
0.3
3.5
I
/I = 2
C B
2
0
5
3
4
4.5
I
= 5.5 A
C
0.1
0.05
0
0.4
0.8
Base current
1.2
1.6
(A)
2
0.2
1
3
5
10
30 50 100
Collector current
I
C
(A)
I
B
3
2001-11-27
2SD2638
r
– t
w
th (j-c)
10
1
0.1
0.01
0.001
Tc = 25°C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
10 m
100 m
1 m
10 m
100 m
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
P – Tc
C
100
10
100
80
Infinite heat sink
I
max (pulsed)*
C
100 ms* 10 ms*
1 ms*
60
40
I
max
C
10 ms*
(continuous)
DC operation
Tc = 25°C
1
100 ms*
20
0
0
25
50
75
100
125
150
175
0.1
Case temperature Tc (°C)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
V
CEO
max
0.01
1
10
100
1000
Collector-emitter voltage
V
CE
(V)
4
2001-11-27
2SD2638
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-11-27
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