2SD2639D [ETC]

TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-220AB ; 晶体管| BJT | NPN | 140V V( BR ) CEO | 12A I(C ) | TO- 220AB\n
2SD2639D
型号: 2SD2639D
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-220AB
晶体管| BJT | NPN | 140V V( BR ) CEO | 12A I(C ) | TO- 220AB\n

晶体 晶体管
文件: 总4页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENN6960  
2SB1683 : PNP Epitaxial Planar Silicon Transistor  
2SD2639 : NPN Triple Diffused Planar Silicon Transistor  
2SB1683 / 2SD2639  
140V / 12A, AF 60W Output Applications  
Features  
Package Dimensions  
Wide ASO because of on-chip ballast resistance.  
unit : mm  
Good dependence of f on current and good HF  
2010C  
T
characteristic.  
[2SB1683 / 2SD2639]  
10.2  
4.5  
3.6  
5.1  
1.3  
1.2  
0.8  
0.4  
1 : Base  
2 : Collector  
3 : Emitter  
1
2
3
Specifications  
( ) : 2SB1683  
2.55  
2.55  
SANYO : TO-220  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
CBO  
V
CEO  
V
EBO  
(--)160  
(--)140  
(--)6  
V
V
V
I
(--)12  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
(--)15  
A
CP  
P
Tc=25°C  
80  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--40 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=(--)80V, I =0  
Unit  
min  
max  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
(--)0.1  
(--)0.1  
mA  
mA  
CBO  
CB  
EB  
E
I
V
=(--)4V, I =0  
C
EBO  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62501 TS IM TA-3139, 3140 No.6960-1/4  
2SB1683 / 2SD2639  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
60*  
max  
200*  
h
FE  
h
FE  
1
2
V
V
V
V
V
=(--)5V, I =(--)1A  
C
=(--)5V, I =(--)6A  
CE  
CE  
CE  
CB  
CE  
DC Current Gain  
20  
C
Gain-Bandwidth Product  
f
=(--)5V, I =(--)1A  
C
=(--)10V, f=1MHz  
15  
MHz  
pF  
V
T
Output Capacitance  
Cob  
(300)210  
Base-to-Emitter Saturation Voltage  
Collector-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
V
=(--)5V, I =(--)1A  
1.5  
2.5  
BE  
(sat)  
C
V
I
I
I
I
I
=(--)5A, I =(--)0.5A  
(1.1)0.6  
V
CE  
C
C
C
C
B
V
=(--)5mA, I =0  
(--)160  
(--)140  
(--)140  
(--)6  
V
(BR)CBO  
E
=(--)5mA, R =∞  
V
BE  
Collector-to-Emitter Breakdown Voltage  
V
(BR)CEO  
(BR)EBO  
=(--)50mA, R =∞  
BE  
V
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
=(--)5mA, I =0  
V
E
C
t
See specified test circuit.  
See specified test circuit.  
See specified test circuit.  
(0.25)0.26  
(0.53)0.68  
(1.61)6.88  
µs  
µs  
µs  
on  
Fall Time  
t
f
t
stg  
Storage Time  
* : The 2SB1683 / 2SD2639 are classified by 1A h  
as follows :  
FE  
Rank  
D
E
h
60 to 120 100 to 200  
FE  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.1%  
Input  
I
B2  
Output  
R
1Ω  
B
R
20Ω  
L
V
200Ω  
R
51Ω  
+
+
V
=20V  
CC  
1µF  
1µF  
10I = --10I =I =1A  
B1 B2  
C
V
=--2V  
BE  
(For PNP, the polarity is reversed)  
I
-- V  
I
-- V  
C CE  
C
CE  
--10  
--8  
10  
8
200mA  
2SD2639  
2SB1683  
--6  
--4  
6
--80mA  
40mA  
4
--40mA  
--20mA  
20mA  
--2  
0
2
I =0  
B
0
0
--10  
--20  
--30  
--40  
0
10  
20  
30  
40  
Collector-to-Emitter Voltage, V  
-- V  
Collector-to-Emitter Voltage, V  
-- V IT03153  
IT03152  
CE  
CE  
I
-- V  
I
-- V  
BE  
C
BE  
C
--7  
7
2SD2639  
2SB1683  
= --5V  
V
=5V  
V
CE  
CE  
--6  
--5  
--4  
6
5
4
--3  
--2  
3
2
--1  
0
1
0
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--1.4  
--1.6  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Base-to-Emitter Voltage, V  
-- V  
IT03154  
Base-to-Emitter Voltage, V  
-- V  
BE  
IT03155  
BE  
No.6960-2/4  
2SB1683 / 2SD2639  
f
-- I  
f
-- I  
T C  
T
C
5
5
2SD2639  
2SB1683  
V
=5V  
V
= --5V  
CE  
CE  
3
2
3
2
10  
10  
7
5
7
5
3
2
3
2
1.0  
--0.1  
1.0  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--1.0  
--10  
1.0  
10  
IT03156  
IT03157  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
h
FE  
-- I  
h -- I  
FE C  
C
1000  
1000  
2SD2639  
2SB1683  
7
5
7
V
=5V  
V
= --5V  
CE  
CE  
5
3
2
3
2
100  
100  
7
5
7
5
3
2
3
2
10  
10  
0.1  
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
--0.1  
--1.0  
--10  
10  
1.0  
IT03158  
IT03159  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
Cob -- V  
Cob -- V  
CB  
CB  
2
2
2SB1683  
f=1MHz  
2SD2639  
f=1MHz  
1000  
1000  
7
5
7
5
3
2
3
2
100  
100  
7
5
7
5
3
3
2
2
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--1.0  
--10  
--100  
1.0  
10  
100  
IT03161  
Collector-to-Base Voltage, V  
-- V  
IT03160  
Collector-to-Base Voltage, V  
-- V  
CB  
CB  
V
(sat) -- I  
V
(sat) -- I  
C
CE  
C
CE  
3
2
3
2
2SB1683  
/ I =10  
2SD2639  
I / I =10  
C
I
C
B
B
10  
10  
7
5
3
7
5
3
2
2
1.0  
1.0  
7
7
5
3
5
3
2
2
0.1  
0.1  
7
7
5
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.1  
--1.0  
--10  
IT03162  
0.1  
1.0  
10  
IT03163  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
No.6960-3/4  
2SB1683 / 2SD2639  
V
(sat) -- I  
V
(sat) -- I  
BE C  
BE  
C
5
5
2SD1683  
2SD2639  
I / I =10  
C
3
2
3
I
/ I =10  
C
B
B
2
--10  
10  
7
5
7
5
3
2
3
2
--1.0  
1.0  
7
7
5
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.1  
--1.0  
--10  
IT03164  
0.1  
1.0  
10  
IT03165  
Collector Current, I -- A  
C
Collector Current, I -- A  
P
-- TcC  
Forward Bias A S O  
C
120  
100  
80  
60  
40  
20  
0
3
2
2SB1683 / 2SD2639  
2SB1683 / 2SD2639  
I
=15A  
CP  
10  
I =12A  
C
7
5
3
2
1.0  
7
5
3
2
Tc=25°C  
Single pulse  
For PNP, minus sign is omitted  
0.1  
1.0  
2
3
5
7
2
3
5
7
2
3
0
20  
40  
60  
80  
100  
120  
140  
160  
10  
100  
IT03166  
Case Temperature, Tc -- °C  
IT03168  
Collector-to-Emitter Voltage, V  
-- V  
CE  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of June, 2001. Specifications and information herein are subject  
to change without notice.  
PS No.6960-4/4  

相关型号:

2SD2639E

TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-220AB
ETC

2SD2641

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
SANKEN

2SD2641

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN
ALLEGRO

2SD2641O

暂无描述
SANKEN

2SD2641O

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN
ALLEGRO

2SD2641P

暂无描述
SANKEN

2SD2641P

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN
ALLEGRO

2SD2641Y

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN
ALLEGRO

2SD2641Y

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN
SANKEN

2SD2642

Silicon NPN Darlington Power Transistor
ISC

2SD2642

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
SANKEN

2SD2642O

Transistor
ISC