2SD2641O [ALLEGRO]
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN;
| 型号： | 2SD2641O |
| 厂家： | 
ALLEGRO MICROSYSTEMS |
| 描述： | Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Equivalent circuit
C
E
B
Darlington 2 S D2 6 4 1
(70Ω)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
External Dimensions MT-100(TO3P)
Ratings
Ratings
100max
100max
110min
5000min
2.5max
3.0max
60typ
Symbol
VCBO
VCEO
VEBO
IC
Symbol
Conditions
Unit
µA
µA
V
Unit
±0.2
4.8
±0.4
15.6
110
ICBO
VCB=110V
V
±0.1
2.0
9.6
110
IEBO
VEB=5V
V
5
V(BR)CEO
hFE
IC=30mA
V
a
b
±0.1
ø3.2
6
1
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
A
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
60(Tc=25°C)
150
W
°C
°C
2
Tj
MHz
pF
3
55typ
Tstg
COB
–55 to +150
+0.2
-0.1
+0.2
-0.1
1.05
0.65
1.4
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
■Typical Switching Characteristics (Common Emitter)
±0.1
±0.1
5.45
5.45
B
C
E
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
Weight : Approx 6.0g
a. Part No.
30
6
5
10
–5
5
–5
0.8typ
6.2typ
1.1typ
b. Lot No.
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
6
6
4
2
0
3
4
2
0
2
IC=5A
1
IC=3A
IB=0.1mA
0
0
2
4
6
0.1
0.5
1
5
10
50 100
0
1
2
2.5
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
5
50000
50000
125˚C
T y p
10000
5000
10000
25˚C
5000
–30˚C
1000
500
1000
1
500
0.5
100
0.01
100
0.01
1
5
10
50 100
Time t(ms)
500 1000 2000
0.1
0.5
1
5 6
0.1
0.5
1
5 6
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
60
40
20
80
60
20
10
5
Typ
40
1
0.5
20
0
Without Heatsink
Natural Cooling
0.1
Without Heatsink
3.5
0
0.05
–0.02
–0.1
–1
–6
3
5
10
50
100
200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
160
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