2SD2642 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687); 硅NPN三重扩散平面型晶体管(补键入2SB1687 )
2SD2642
型号: 2SD2642
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
硅NPN三重扩散平面型晶体管(补键入2SB1687 )

晶体 晶体管
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C
E
Equivalent circuit  
B
Darlington 2 S D2 6 4 2  
(70)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)  
Absolute maximum ratings (Ta=25°C) Electrical Characteristics  
Application : Audio, Series Regulator and General Purpose  
External Dimensions FM20(TO220F)  
(Ta=25°C)  
Symbol  
Ratings  
Symbol  
Conditions  
Ratings  
100max  
100max  
110min  
5000min  
2.5max  
3.0max  
60typ  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
ICBO  
VCBO  
VCEO  
VEBO  
IC  
110  
VCB=110V  
2.8  
V
IEBO  
110  
VEB=5V  
V
.
V(BR)CEO  
5
IC=30mA  
V
±0.2  
ø3.3  
hFE  
VCE=4V, IC=5A  
IC=5A, IB=5mA  
IC=5A, IB=5mA  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
6
1
a
b
A
V
V
VCE(sat)  
VBE(sat)  
fT  
IB  
A
PC  
30(Tc=25°C)  
150  
W
°C  
°C  
MHz  
pF  
Tj  
±0.15  
1.35  
COB  
55typ  
Tstg  
±0.15  
1.35  
–55 to +150  
+0.2  
-0.1  
0.85  
2.54  
+0.2  
-0.1  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
Typical Switching Characteristics (Common Emitter)  
0.45  
±0.2  
2.4  
2.54  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Part No.  
b. Lot No.  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
ton  
tstg  
tf  
()  
(A)  
(V)  
(mA)  
(mA)  
(µs)  
(µs)  
(µs)  
B
C E  
30  
6
5
10  
–5  
5
–5  
0.8typ  
6.2typ  
1.1typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
6
4
2
0
6
4
2
0
3
2
IC=5A  
1
IC=3A  
IB=0.1mA  
0
0
2
4
6
0.1  
0.5  
1
5
10  
50 100  
0
1
2
2.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
4
1
50000  
50000  
125˚C  
T y p  
10000  
5000  
10000  
25˚C  
5000  
–30˚C  
1000  
500  
1000  
500  
0.5  
0.3  
100  
0.01  
100  
0.01  
1
5
10  
50 100  
Time t(ms)  
500 1000  
0.1  
0.5  
1
5 6  
0.1  
0.5  
1
5 6  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
30  
20  
10  
30  
80  
60  
Typ  
10  
5
40  
1
0.5  
20  
0
Without Heatsink  
Natural Cooling  
0.1  
Without Heatsink  
2
0
0.05  
–0.02  
–0.1  
–1  
–6  
3
5
10  
50  
100  
200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
161  

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