2SD2642 [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | 2SD2642 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2642
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA)
·Complement to Type 2SB1687
APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Votage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
110
110
V
5
V
Collector Current-Continuous
Base Current-Continuous
6
1
A
IB
A
Collector Power Dissipation
@TC=25℃
PC
30
W
℃
℃
Junction Temperature
Storage Temperature
150
TJ
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2642
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 30mA ; IB= 0
110
V
IC= 5A; IB= 5mA
IC= 5A; IB= 5mA
VCB= 110V; IE= 0
VEB= 5V; IC= 0
2.5
3.0
V
VCE
(sat)
V
VBE
(sat)
ICBO
100
100
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
DC Current Gain
IC= 5A; VCE= 4V
5000
Output Capacitance
55
60
pF
IE= 0; VCB= 10V; ftest= 1MHz
IE= -0.5A ; VCE= 12V
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-on Time
0.8
6.2
1.1
μs
μs
μs
ton
tstg
tf
VCC= 30V, RL= 6Ω,
IC= 5A; IB1= -IB2= 5mA,
Storage Time
Fall Time
hFE Classifications
O
P
Y
5000-12000
6500-20000 15000-30000
2
isc Website：www.iscsemi.cn
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