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2SC3346 [TOSHIBA]

SILICON NPN EPITAXIAL TYPE(PCT PROCESS); NPN硅外延式( PCT程序)
2SC3346
型号: 2SC3346
厂家: TOSHIBA    TOSHIBA
描述:

SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
NPN硅外延式( PCT程序)

晶体 晶体管 功率双极晶体管 PC
文件: 总3页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2SC3346O

Transistor

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ISC

2SC3346Y

Transistor

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ISC

2SC3352

Silicon NPN Power Transistors

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ISC

2SC3352

Silicon NPN Power Transistors

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SAVANTIC

2SC3352A

TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 1.5A I(C) | SOT-186

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ETC

2SC3353

Silicon NPN Power Transistor

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ISC

2SC3353A

TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | SOT-186

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ETC

2SC3354

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

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PANASONIC

2SC3354S

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP

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ETC

2SC3354T

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP

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ETC

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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NEC

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER

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UTC

2SC3355

isc Silicon NPN RF Transistor

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ISC

2SC3355

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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RENESAS

2SC3355

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92

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CDIL

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ETC

2SC3355-K

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN

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NEC

2SC3355-K-A

暂无描述

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NEC

2SC3355-K-A

暂无描述

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RENESAS

2SC3355-T

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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RENESAS