2SC3355 [ISC]
isc Silicon NPN RF Transistor; ISC的硅NPN晶体管RF
| 型号： | 2SC3355 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN RF Transistor |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP.
@VCE = 10 V, IC = 40 mA, f = 1.0 GHz
·High Power Gain
MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
20
UNIT
V
12
V
3.0
V
Collector Current-Continuous
0.1
A
Collector Power Dissipation
@TC=25℃
PC
0.6
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
ICBO
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
MIN
TYP.
MAX
1.0
UNIT
μA
VCB= 10V; IE= 0
IEBO
VEB= 1V; IC= 0
1.0
μA
hFE
IC= 20mA ; VCE= 10V
50
300
fT
Current-Gain—Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
IC= 20mA ; VCE= 10V
6.5
0.65
9.5
GHz
pF
COB
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 20mA ; VCE= 10V;f= 1.0GHz
IC= 7mA ; VCE= 10V;f= 1.0GHz
IC= 40mA ; VCE= 10V;f= 1.0GHz
1.0
︱S21e︱2
dB
NF
1.1
dB
NF
Noise Figure
1.8
3.0
dB
hFE Classification
Class
Marking
hFE
K
K
50-300
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50Ω
f (MHz)
200
︱S11︱
0.173
0.054
0.013
0.028
0.062
0.091
0.121
0.148
0.171
0.207
∠S11
-80.3
-77.0
-57.9
81.8
82.2
80.7
80.2
80.1
80.0
79.9
︱S21︱
13.652
7.217
4.936
3.761
3.094
2.728
2.321
2.183
1.892
1.814
∠S21
103.4
85.1
74.0
62.3
58.3
52.9
44.9
36.4
30.2
21.4
︱S12︱
0.041
0.066
0.113
0.144
0.183
0.215
0.240
0.288
0.305
0.344
∠S12
73.8
71.2
69.3
67.0
64.7
61.7
58.7
50.7
46.8
39.1
︱S22︱
0.453
0.427
0.428
0.414
0.392
0.377
0.359
0.354
0.345
0.344
∠S22
-21.8
-26.0
-30.8
-37.2
-43.2
-51.4
-58.3
-67.2
-80.0
-90.4
400
600
800
1000
1200
1400
1600
1800
2000
4
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
VCE = 10 V, IC = 40 mA, ZO = 50Ω
f (MHz)
200
︱S11︱
0.011
0.028
0.027
0.043
0.074
0.098
0.120
0.146
0.171
0.205
∠S11
-60.1
-42.9
25.1
65.7
75.1
75.6
74.1
75.8
77.2
78.0
︱S21︱
13.76
7.338
4.996
3.801
3.134
2.759
2.351
2.203
1.910
1.825
∠S21
105.4
82.9
72.7
61.9
57.6
52.4
44.4
36.0
29.9
21.3
︱S12︱
0.040
0.069
0.114
0.144
0.183
0.221
0.247
0.291
0.299
0.344
∠S12
-73.3
66.7
69.4
67.8
63.4
62.1
55.7
49.6
46.0
39.4
︱S22︱
0.421
0.416
0.414
0.406
0.386
0.373
0.356
0.347
0.342
0.335
∠S22
-17.5
-22.8
-28.7
-35.7
-41.8
-49.8
-56.3
-66.6
-78.8
-89.6
400
600
800
1000
1200
1400
1600
1800
2000
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC3355
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 10 V
S
21e-FREQUENCY CONDITION VCE = 10 V
S12e-FREQUENCY
CONDITION VCE = 10 V
IC = 40 mA
IC = 40 mA
6
isc Website：www.iscsemi.cn
相关型号：
2SC3355-K
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
NEC
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