2SC3355(NE85632) [ETC]
Discrete ; 分离\n
| 型号： | 2SC3355(NE85632) |
| 厂家： | 
ETC |
| 描述： | Discrete
|
| 文件： | 总8页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
It has lange dynamic range and good current characteristic.
FEATURES
•
Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
High Power Gain
•
0.5
(0.02)
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
1.27
(0.05)
2.54
(0.1)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
20
12
V
V
3.0
V
1
2
3
100
mA
mW
C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
600
Tj
150
1. Base
2. Emitter
EIAJ : SC-43B
JEDEC: TO-92
3. Collector IEC
Tstg
65 to +150
C
: PA33
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
MIN.
TYP.
MAX.
UNIT
A
TEST CONDITIONS
VCB = 10 V, IE = 0
ICBO
1.0
1.0
300
IEBO
A
VEB = 1.0 V, IC = 0
hFE
50
120
6.5
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
fT
GHz
pF
VCE = 10 V, IC = 20 mA
Cob
0.65
9.5
1.0
3.0
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
2
S21e
dB
NF
NF
1.1
dB
Noise Figure
1.8
dB
hFE Classification
Class
Marking
hFE
K
K
50 to 300
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
1985
2SC3355
TYPICAL CHARACTERISTICS (TA = 25 C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
1
heat sink
f = 1.0 MHz
19
1000
With heat sink
500
Free air
0.5
0.3
0
50
100
150
TA
-Ambient Temperature-°C
0
0.5
V
1
2
5
10
20 30
CB-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
200
100
50
15
10
VCE = 10 V
V
CE = 10 V
f = 1.0 GHz
5
0
20
10
0.5
1
5
10
50
0.5
1
5
10
50 70
I
C-Collector Current-mA
I
C-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
10
G
max
5.0
20
3.0
2.0
2
|S21e
|
1.0
10
0.5
0.3
0.2
V
CE = 10 V
= 20 mA
VCE = 10 V
IC
0.1
0
0
0.5 10
5.0 10
30
0.1
0.2
0.4 0.6 0.8 10
2
I
C-Collector Current-mA
f-Frequency-GHz
2
2SC3355
NOISE FIGURE vs.
COLLECTOR CURRENT
INTERMODULATIOn DISTORTION vs.
COLLECTOR CURRENT
7
6
5
4
3
2
V
CE = 10 V
f = 1.0 GHz
−80
IM3
−70
−60
−50
−40
−30
IM2
1
0
V
CE = 10 V
0.5
1
5
10
50 70
µ
at
V
R
0
+ 100 dB V/50 Ω
= R = 50 Ω
I
C-Collector Current-mA
g
e
IM
IM
2
3
f = 90 + 100 MHz
f = 2 × 200 − 190 MHz
20
30
40
50
60
70
I
C-Collector Current-mA
S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50
f (MHz)
200
S11
S11
80.3
77.0
57.9
81.8
82.2
80.7
80.2
80.1
80.0
79.9
S21
13.652
7.217
4.936
3.761
3.094
2.728
2.321
2.183
1.892
1.814
S21
103.4
85.1
74.0
62.3
58.3
52.9
44.9
36.4
30.2
21.4
S12
S12
S22
S22
0.173
0.054
0.013
0.028
0.062
0.091
0.121
0.148
0.171
0.207
0.041
0.066
0.113
0.144
0.183
0.215
0.240
0.288
0.305
0.344
73.8
71.2
69.3
67.0
64.7
61.7
58.7
50.7
46.8
39.1
0.453
0.427
0.428
0.414
0.392
0.377
0.359
0.354
0.345
0.344
21.8
26.0
30.8
37.2
43.2
51.4
58.3
67.2
80.0
90.4
400
600
800
1000
1200
1400
1600
1800
2000
VCE = 10 V, IC = 40 mA, ZO = 50
f (MHz)
200
S11
S11
60.1
42.9
25.1
65.7
75.1
75.6
74.1
75.8
77.2
78.0
S21
13.76
7.338
4.996
3.801
3.134
2.759
2.351
2.203
1.910
1.825
S21
105.4
82.9
72.7
61.9
57.6
52.4
44.4
36.0
29.9
21.3
S12
S12
73.3
66.7
69.4
67.8
63.4
62.1
55.7
49.6
46.0
39.4
S22
S22
17.5
22.8
28.7
35.7
41.8
49.8
56.3
66.6
78.8
89.6
0.011
0.028
0.027
0.043
0.074
0.098
0.120
0.146
0.171
0.205
0.040
0.069
0.114
0.144
0.183
0.221
0.247
0.291
0.299
0.344
0.421
0.416
0.414
0.406
0.386
0.373
0.356
0.347
0.342
0.335
400
600
800
1000
1200
1400
1600
1800
2000
3
2SC3355
S-PARAMETER
CONDITION
VCE = 10 V
S11e, S22e-FREQUENCY
0.15
0.10
0.40
90
80
600
1.4
120
0.2
2.0
T
N
40
E
0.05
P
M
CO
E
30
)
A
E
+JX
R
4.0
––––
(
E
V
Z
I
1.0
T
I
20
S
11e
2.0 GHz
IC = 40 mA
I
C
= 20 mA
50
REACTANCE COMPONENT
R
I = 40 mA
C
––––
0.2
(
)
ZO
0.2 GHz
0.4
0.2 GHz
0.1
0.6
0.8
I
C
= 20 mA
0.2
T
N
1.0
O
P
2.0 GHz
S
22e
O M
C
3 . 0
R
E
I V
0 . 0 5
G
0 . 4 5
N E
0.6
0.7
9 − 0
S21e-FREQUENCY
CONDITION
90°
V
CE = 10 V
= 40 mA
S12e-FREQUENCY
CONDITION
V
CE = 10 V
= 40 mA
IC
IC
90°
120°
120°
60°
60°
0.2 GHz
150°
30°
150°
30°
S
12e
S
21e
2.0 GHz
2.0 GHz
0.2 GHz
180°
0° 180°
0°
4
8
12
16 20
0.1
0.2 0.3
0.4 0.5
−150°
−30°
−150°
−30°
−60°
−60°
−120°
−120°
−90°
−90°
4
2SC3355
[MEMO]
5
2SC3355
[MEMO]
6
2SC3355
[MEMO]
7
2SC3355
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document.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
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of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
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Anti-radioactive design is not implemented in this product.
M4 96. 5
相关型号：
2SC3355-K
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
NEC
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