2SC3354S [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 50MA I（C ） | SIP\n
| 型号： | 2SC3354S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
|
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
4.0±0.2
Features
Optimum for high-density mounting.
■
●
●
Allowing supply with the radial taping.
●
High transition frequency fT.
marking
Absolute Maximum Ratings (Ta=25˚C)
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
1.27 1.27
2.54±0.15
3
50
V
mA
mW
˚C
1:Emitter
2:Collector
3:Base
Collector power dissipation
Junction temperature
Storage temperature
PC
300
EIAJ:SC–72
New S Type Package
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
30
3
typ
max
Unit
V
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
IC = 100µA, IE = 0
IE = 10µA, IC = 0
CB = 10V, IE = –2mA
VEBO
hFE
V
V
25
250
VBE
VCB = 10V, IE = –2mA
720
0.8
1
mV
pF
Common base reverse transfer capacitance Crb
VCE = 6V, IC = 0, f = 1MHz
Common emitter reverse transfer capacitance Cre
*
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –15mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 100MHz
1.5
pF
Transition frequency
Power gain
fT
600
1200
17
1600
MHz
dB
PG
*hFE Rank classification
Rank
T
S
fT(MHz)
600 ~ 1300 900 ~ 1600
1
Transistor
2SC3354
PC — Ta
IC — VCE
IC — VBE
500
400
300
200
100
0
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Ta=25˚C
VCE=10V
25˚C
Ta=75˚C
–25˚C
IB=300µA
250µA
200µA
150µA
100µA
50µA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
240
1600
1400
1200
1000
800
600
400
200
0
IC/IB=10
f=100MHz
Ta=25˚C
VCE=10V
30
10
200
160
120
80
VCB=10V
6V
3
1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
0.3
0.1
–25˚C
–25˚C
40
0.03
0.01
0
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
Zrb — IE
Cre — VCE
5
120
100
80
60
40
20
0
2.4
2.0
1.6
1.2
0.8
0.4
0
IC=1mA
f=10.7MHz
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
f=2MHz
Ta=25˚C
4
3
2
1
0
VCE=6V
10V
1
3
10
30
100
– 0.1
– 0.3
–1
–3
–10
0.1
0.3
1
3
10
30
100
(
V
)
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Emitter current IE mA
2
Transistor
2SC3354
PG — IE
NF — IE
30
12
10
8
f=100MHz
Rg=50Ω
Ta=25˚C
VCE=10V
6V
VCE=10V
f=100MHz
Rg=50kΩ
Ta=25˚C
25
20
15
10
5
6
4
2
0
0
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
Emitter current IE mA
Emitter current IE mA
3
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2001 MAR
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