TISP4150F3LMR [TI]
150V, 4A, SILICON SURGE PROTECTOR, PLASTIC, LM002, 2 PIN;
| 型号： | TISP4150F3LMR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 150V, 4A, SILICON SURGE PROTECTOR, PLASTIC, LM002, 2 PIN |
| 文件： | 总12页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
LM PACKAGE
(TOP VIEW)
Low Voltage Overshoot under Surge
T(A)
NC
R(B)
1
2
3
V
V
(BO)
DRM
DEVICE
V
V
MD4XAT
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
58
66
72
82
NC - No internal connection on pin 2
100
120
145
180
200
220
240
270
125
150
180
240
260
290
320
380
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
T(A)
1
2
3
NC
R(B)
MD4XAKB
NC - No internal connection on pin 2
●
Rated for International Surge Wave Shapes
device symbol
I
TSP
WAVE SHAPE
STANDARD
A
T
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
FCC Part 68
I3124
60
38
50
45
35
ITU-T K20/21
FCC Part 68
REA PE-60
SD4XAA
R
●
Ordering Information
Terminals T and R correspond to the
alternative line designators of A and B
DEVICE TYPE
PACKAGE TYPE
TISP4xxxF3LM
Straight Lead DO-92 Bulk Pack
TISP4xxxF3LMR
Straight Lead DO-92 Tape and Reeled
TISP4xxxF3LMFR Formed Lead DO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The
Copyright © 1999 Texas Instruments Incorporated
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texas Instruments standard warranty.
Production processing does not necessary include
testing of all parameters.
Designed and manufactured by Power
Innovations, Bedford, UK. under private
label for Texas Instruments.
1
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
description (continued)
TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The TISP4xxxF3LMF
is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings
RATING
SYMBOL
VALUE
± 58
UNIT
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
Repetitive peak off-state voltage (0 °C < T < 70 °C)
V
V
J
DRM
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
175
120
60
50
38
38
50
45
35
80
70
I
A
TSP
I
4
A
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
di /dt
250
A/µs
°C
T
T
-40 to +150
-55 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < T < 70 °C.
J
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
2
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, T = 25 °C (unless otherwise noted)
J
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
V
= ±V
, 0 °C < T < 70 °C
±10
µA
DRM
D
DRM
J
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
SOURCE
V
(BO)
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
= 50 Ω,
SOURCE
V
V
(BO)
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
±0.15
A
V
A
(BO)
SOURCE
V
I
I
= ±5 A, t = 100 µs
W
T
T
T
I
= ±5 A, di/dt = +/-30 mA/ms
±0.15
±5
H
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
±10
108
74
D
D
f = 100 kHz, V = 1 Vrms, V = 0,
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
d
D
74
C
Off-state capacitance
pF
off
f = 100 kHz, V = 1 Vrms, V = -50 V
40
d
D
25
20
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
R
Junction to free air thermal resistance
120
°C/W
θJA
3
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR R AND T TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE T TERMINAL
4
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TC4XAA
TC4XAB
1.00
0.99
0.98
0.97
0.96
0.95
100
10
'4125
THRU
'4180
'4072
AND
'4082
1
VD = 50 V
0·1
VD = -50 V
0·01
0·001
'4240
THRU
'4380
-40
-35
-30
-25
-20
-15
-10
-5
0
-25
0
25
50
75
100 125 150
TAMIN - Minimum Ambient Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED HOLDING CURRENT
vs
NORMALISED V
(BO)
vs
JUNCTION TEMPERATURE
AMBIENT TEMPERATURE
TC4XAC
TC4XAD
1.1
2.0
1.5
'4072
AND
'4125
THRU
'4180
'4082
1.0
0.9
'4240
THRU
'4380
'4240
THRU
'4380
0.8
0.7
1.0
0.6
0.5
'4072
AND
'4082
0.9
0.4
125 150
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
T - Ambient Temperature - °C
A
TJ - Junction Temperature - °C
Figure 4.
Figure 5.
5
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
NORMALISED BREAKOVER VOLTAGE
vs
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPAL CURRENT
RATE OF RISE OF PRINCIPAL CURRENT
TC4XAE
TC4XAF
1.3
1.2
1.1
1.0
1.3
1.2
1.1
1.0
'4072
'4072
POSITIVE POLARITY
NEGATIVE POLARITY
AND
AND
'4082
'4082
'4125
THRU
'4180
'4240
THRU
'4380
'4240
THRU
'4380
'4125
THRU
'4180
0·001
0·01
0·1
1
10
100
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principal Current - A/µs
di/dt - Rate of Rise of Principal Current - A/µs
Figure 6.
Figure 7.
OFF-STATE CAPACITANCE
vs
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TERMINAL VOLTAGE
TC4XAG
TC4XAH
100
90
80
100
90
80
POSITIVE POLARITY
NEGATIVE POLARITY
70
60
70
60
'4072
AND
'4082
'4072
AND
50
40
50
40
'4082
30
20
30
20
'4125
THRU
'4180
'4125
THRU
'4240
THRU
'4380
'4180
'4240
THRU
'4380
10
0·1
10
0·1
1
10
50
1
10
50
Terminal Voltage - V
Terminal Voltage - V
Figure 8.
Figure 9.
6
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4LAAA
10
9
8
VGEN = 600 Vrms, 50/60 Hz
RGEN(t) = 1.4*VGEN / ITSM(t)
7
6
5
4
3
2
1
0·1
1
10
100
1000
t - Current Duration - s
Figure 10.
MECHANICAL DATA
device symbolization code
Devices will be coded as below.
SYMOBLIZATION
DEVICE
CODE
4072F3
4082F3
4125F3
4150F3
4180F3
4240F3
4260F3
4290F3
4320F3
4380F3
TISP4072F3
TISP4082F3
TISP4125F3
TISP4150F3
TISP4180F3
TISP4240F3
TISP4260F3
TISP4290F3
TISP4320F3
TISP4380F3
carrier information
Devices are shipped in one of the carriers below. A reel contains 2 000 devices.
PACKAGE TYPE
CARRIER
ORDER #
Straight Lead DO-92
Bulk Pack
TISP4xxxF3LM
Straight Lead DO-92 Tape and Reeled TISP4xxxF3LMR
Formed Lead DO-92 Tape and Reeled TISP4xxxF3LMFR
7
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
LM002 (DO-92)
2-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
.
LM002 Package (DO-92)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
2,20 MAX.
A
2
2
12,7 MIN.
0,56
0,40
1
3
3
1
VIEW A
0,41
0,35
1,40
1,14
2,67
2,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XARA
8
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
LM002 (DO-92) - Formed Leads Version
2-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LMF002 (DO-92) - Formed Leads Version of LM002
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
2,20 MAX.
4,00 MAX.
A
2
2
0,56
0,40
1
3
3
1
VIEW A
2,90
2,40
0,41
0,35
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XASA
9
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
tape dimensions
LM002 Package (Straight Lead DO-92) Tape
LM002 Tape Dimensions Conform to
the Requirements of EIA-468-B
13,70
11,70
Body Indent Visible
0,50
0,00
32,00
23,00
2,50 MIN.
27,68
17,66
11,00
8,50
9,75
8,50
19,00
5,50
19,00
17,50
3,14
2,14
4,30
3,70
φ
Adhesive Tape on Reverse
Side - Shown Dashed
VIEW A
5,48
4,68
13,00
12,40
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
Direction of Feed
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XAPC
10
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
MECHANICAL DATA
tape dimensions
LMF002 Package (Formed Lead DO-92) Tape
LMF002 Tape Dimensions Conform to
the Requirements of EIA-468-B
13,70
11,70
Body Indent Visible
0,50
0,00
32,00
23,00
2,50 MIN.
27,68
17,66
16,53
15,50
11,00
8,50
9,75
8,50
19,00
5,50
19,00
17,50
5,28
4,88
4,30
3,70
φ
Adhesive Tape on Reverse
Side - Shown Dashed
VIEW A
4,21
3,41
13,00
12,40
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
Direction of Feed
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XAQC
11
TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or ser-
vice without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders,
that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems neces-
sary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those man-
dated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or
environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such
applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be
directed to TI through a local SC sales office.
In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be
provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any
patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
Copyright © 1999, Texas Instruments Incorporated
12
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