TISP4150F3LPR [BOURNS]
Silicon Surge Protector, 150V V(BO) Max, 4A, TO-92, PLASTIC, LP003, 3 PIN;
| 型号： | TISP4150F3LPR |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 150V V(BO) Max, 4A, TO-92, PLASTIC, LP003, 3 PIN |
| 文件： | 总10页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1997, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED DECEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
LP PACKAGE
(TOP VIEW)
Low Voltage Overshoot under Surge
T(A)
NC
1
2
3
V
V
(BO)
DRM
R(B)
DEVICE
V
V
NC - No internal connection
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
58
66
72
82
MD4XADA
PACKAGE WITH FORMED
LEADS FOR LPR VERSION
(TOP VIEW)
100
120
145
180
200
220
240
270
125
150
180
240
260
290
320
380
T(A)
NC
1
2
3
R(B)
MD4XAH
NC - No internal connection
●
Rated for International Surge Wave Shapes
device symbol
I
TSP
WAVE SHAPE
STANDARD
A
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
FCC Part 68
I3124
60
38
50
45
35
ITU-T K20/21
FCC Part 68
REA PE-60
●
Ordering Information
DEVICE TYPE
PACKAGE TYPE
TO-92 Bulk Pack
TISP4xxxF3LPR Formed Lead TO-92 Tape and Reeled
TISP4xxxF3LP
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LP range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a TO-92 (LP) cylindrical plastic package. The
difference between the TISP4xxxF3LP and TISP4xxxF3LPR versions is shown in the ordering information.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
The TISP4xxxF3LP is a straight lead TO-92 supplied in bulk pack and the TISP4xxxF3LPR is a formed lead
TO-92 supplied on tape and reeled.
absolute maximum ratings
RATING
SYMBOL
VALUE
± 58
UNIT
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
Repetitive peak off-state voltage (0°C < T < 70°C)
V
V
J
DRM
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
175
120
60
50
38
38
50
45
35
80
70
I
A
TSP
I
4
A
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
di /dt
250
A/µs
°C
T
T
-40 to +150
-40 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0°C < T <70°C.
J
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T = 25°C
J
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
V
= ±V
, 0°C < T < 70°C
±10
µA
DRM
D
DRM
J
‘4072
±72
±82
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±125
±150
±180
±240
±260
±290
±320
±380
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
V
(BO)
SOURCE
P R O D U C T
I N F O R M A T I O N
2
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
electrical characteristics for the T and R terminals, T = 25°C (continued)
J
PARAMETER
TEST CONDITIONS
MIN
TYP
±86
MAX
UNIT
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±96
±143
±168
±198
±267
±287
±317
±347
±407
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
= 50 Ω,
SOURCE
V
V
(BO)
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
±0.15
±0.6
±3
A
V
A
(BO)
SOURCE
V
I = ±5 A, t = 100 µs
T W
T
I
I = ±5 A, di/dt = +/-30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
(BR)MIN
I
V
= ±50 V
±10
108
74
D
D
f = 100 kHz, V = 1 Vrms, V = 0,
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
d
D
74
C
Off-state capacitance
pF
off
f = 100 kHz, V = 1 Vrms, V = -50 V
40
d
D
25
20
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
2
R
Junction to free air thermal resistance
P
= 0.8 W, T = 25°C, 5 cm , FR4 PCB
156
°C/W
θJA
tot
A
P R O D U C T
I N F O R M A T I O N
3
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
P R O D U C T
I N F O R M A T I O N
4
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
NORMALISED BREAKOVER VOLTAGE
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC3MAIA
TC3LAF
1.10
1.05
1.00
0.95
100
10
1
VD = 50 V
0·1
VD = -50 V
0·01
0·001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
HOLDING CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC3LAHA
TC3MAL
0.5
0.4
100
10
1
0.3
0.2
25°C
150°C
-40°C
0.1
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8 9 10
VT - On-State Voltage - V
TJ - Junction Temperature - °C
Figure 4.
Figure 5.
P R O D U C T
I N F O R M A T I O N
5
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4LAAA
10
9
8
VGEN = 600 Vrms, 50/60 Hz
RGEN(t) = 1.4*VGEN / ITSM(t)
7
6
5
4
3
2
1
0·1
1
10
100
1000
t - Current Duration - s
Figure 6.
P R O D U C T
I N F O R M A T I O N
6
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 Falls Within JEDEC
TO-226AA Dimensions
LP003 (TO-92)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
Seating Plane
1,27
(see Note A)
12,7 MIN.
0,56
0,40
1
3
1,40
1,14
0,41
0,35
2
2,67
2,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: Lead dimensions are not controlled in this area.
MDXXAX
P R O D U C T
I N F O R M A T I O N
7
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 (TO-92) - Formed Leads Version
LP003 Falls Within JEDEC
TO-226AA Dimensions
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,40
1
2
3
2,90
2,40
0,41
0,35
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAR
P R O D U C T
I N F O R M A T I O N
8
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
MECHANICAL DATA
tape dimensions
LP Package (TO-92) Tape (Formed Lead Version)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,41
0,35
0,40
13,70
11,70
0,50
0,00
32,00
23,00
2,50 MIN.
27,68
17,66
16,50
15,50
11,00
8,50
9,75
8,50
19,00
5,50
19,00
17,50
2,90
2,40
4,30
3,70
ø
2,90
2,40
6,75
5,95
13,00
12,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAS
P R O D U C T
I N F O R M A T I O N
9
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
10
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