TISP4150F3SL [TI]
150V, 6A, SILICON SURGE PROTECTOR, SIP-2;
| 型号： | TISP4150F3SL |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 150V, 6A, SILICON SURGE PROTECTOR, SIP-2 |
| 文件： | 总11页 (文件大小：363K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
D PACKAGE
(TOP VIEW)
Low Voltage Overshoot under Surge
1
2
3
4
8
7
6
5
R
R
R
R
T
T
T
T
V
V
(BO)
DRM
DEVICE
V
V
‘4125F3
‘4150F3
‘4180F3
100
120
145
125
150
180
MDXXAI
Specified ratings require the connection
of pins 1, 2, 3 and 4 for the T terminal.
SL PACKAGE
(TOP VIEW)
●
●
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
1
T
I
TSP
WAVE SHAPE
STANDARD
A
R
2
2/10 µs
8/20 µs
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
175
120
60
MDXXAH
MD4XAA
10/160 µs
10/560 µs
0.5/700 µs
45
device symbol
38
FTZ R12
50
D PACKAGE
SL PACKAGE
10/700 µs
VDE 0433
50
T
T
T
T
T
CCITT IX K17/K20
REA PE-60
50
2
1
4
5
3
1
8
10/1000 µs
35
●
●
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
PART # SUFFIX
D
6
7
2
DR
SL
R
R
R
R
R
SD4XAL
Terminals T and R correspond to the
alternative line designators of A and B
Single-in-line
UL Recognized, E132482
description
These medium voltage symmetrical transient
high crowbar holding current prevents dc latchup
as the current subsides.
voltage suppressor devices are designed to
protect two wire telecommunication applications
against transients caused by lightning strikes
and ac power lines. Offered in three voltage
variants to meet battery and protection
requirements they are guaranteed to suppress
and withstand the listed international lightning
surges in both polarities.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
The small-outline 8-pin assignment has been
carefully chosen for the TISP series to maximise
the inter-pin clearance and creepage distances
which are used by standards (e.g. IEC950) to
establish voltage withstand ratings.
Transients are initially clipped by breakdown
clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The
Copyright © 1997 Texas Instruments Incorporated
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include
testing of all parameters.
Designed and manufactured by Power
Innovations, Bedford, UK. under
private label for Texas Instruments.
1
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
SYMBOL
VALUE
± 100
± 120
± 145
UNIT
‘4125F3
‘4150F3
‘4180F3
Repetitive peak off-state voltage (0°C < T < 70°C)
V
V
J
DRM
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
350
175
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
120
60
I
50
A
TSP
38
50
50
45
35
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz, 1 s
D Package
SL Package
4
6
I
A rms
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
di /dt
250
A/µs
°C
T
Junction temperature
T
-40 to +150
-40 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T <70°C. The surge may be repeated after the TISP returns to its initial
J
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T = 25°C
J
TISP4125F3
TISP4150F3
PARAMETER
TEST CONDITIONS
UNIT
MAX
MIN
TYP
MAX
MIN
TYP
Repetitive peak off-
state current
I
V
= ±V
, 0°C < T < 70°C
±10
±10
µA
V
DRM
D
DRM
J
V
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 W
= 50 W,
±125
±150
(BO)
(BO)
(BO)
SOURCE
Impulse breakover volt- dv/dt = ±1000 V/µs,
R
SOURCE
±143
±168
V
age
di/dt < 20 A/µs
I
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
R
= 300 W
±0.15
±0.6
±3
±0.15
±0.6
±3
A
V
A
SOURCE
V
I = ±5 A,
t
= 100 µs
T
T
W
I
di/dt = +/-30 mA/ms
±0.15
±5
±0.15
±5
H
Linear voltage ramp
dv/dt
kV/µs
Maximum ramp value < 0.85V
(BR)MIN
I
V
= ±50 V
±10
95
±10
95
µA
pF
pF
pF
D
D
V
V
V
= 0,
55
30
15
55
30
15
D
D
D
f = 100 kHz, V = 100 mV
d
C
Off-state capacitance
= -5 V
= -50 V
50
50
off
(see Note 4)
25
25
NOTE 4: Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and R terminals, T = 25°C
J
TISP4180F3
TYP MAX
PARAMETER
TEST CONDITIONS
UNIT
MIN
Repetitive peak off-
state current
I
V
= ±V
, 0°C < T < 70°C
±10
µA
DRM
D
DRM
J
2
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and R terminals, T = 25°C (continued)
J
TISP4180F3
PARAMETER
TEST CONDITIONS
UNIT
V
MIN
TYP
MAX
V
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 W
= 50 W,
±180
(BO)
(BO)
(BO)
SOURCE
Impulse breakover volt- dv/dt = ±1000 V/µs,
R
SOURCE
±198
V
age
di/dt < 20 A/µs
I
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
R
= 300 W
±0.15
±0.6
±3
A
V
A
SOURCE
V
I = ±5 A,
t
= 100 µs
T
T
W
I
di/dt = +/-30 mA/ms
±0.15
±5
H
Linear voltage ramp
dv/dt
kV/µs
Maximum ramp value < 0.85V
(BR)MIN
I
V
= ±50 V
±10
95
µA
pF
pF
pF
D
D
V
V
V
= 0,
55
30
15
D
D
D
f = 100 kHz, V = 100 mV
d
C
Off-state capacitance
= -5 V
= -50 V
50
off
(see Note 5)
25
NOTE 5: Further details on capacitance are given in the Applications Information section.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
P
= 0.8 W, T = 25°C
2
D Package
160
105
tot
A
R
Junction to free air thermal resistance
°C/W
qJA
5 cm , FR4 PCB
SL Package
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
3
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and T terminals
OFF-STATE CURRENT
vs
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC3MAI
TC3MAF
100
10
Normalised to V(BR)
I(BR) = 100 µA and 25°C
Positive Polarity
1.2
1.1
1.0
0.9
1
VD = 50 V
V(BO)
0·1
VD = -50 V
V(BR)
0·01
0·001
V(BR)M
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED BREAKDOWN VOLTAGES
vs
ON-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE VOLTAGE
TC3HAJ
TC3MAL
100
10
1
1.2
1.1
1.0
0.9
V(BO)
V(BR)M
V(BR)
Normalised to V(BR)
I(BR) = 100 µA and 25°C
Negative Polarity
25°C
150°C
-40°C
-25
0
25
50
75
100 125 150
1
2
3
4
5
6
7
8 9 10
TJ - Junction Temperature - °C
VT - On-State Voltage - V
Figure 4.
Figure 5.
4
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and T terminals
HOLDING CURRENT & BREAKOVER CURRENT
NORMALISED BREAKOVER VOLTAGE
vs
vs
JUNCTION TEMPERATURE
RATE OF RISE OF PRINCIPLE CURRENT
TC3MAH
TC3MAB
1.0
0.9
0.8
1.3
1.2
1.1
1.0
0.7
0.6
0.5
0.4
I(BO)
Negative
0.3
0.2
IH
Positive
0.1
-25
0
25
50
75
100 125 150
0·001
0·01
0·1
1
10
100
TJ - Junction Temperature - °C
di/dt - Rate of Rise of Principle Current - A/µs
Figure 6.
Figure 7.
OFF-STATE CAPACITANCE
vs
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
JUNCTION TEMPERATURE
TC3MAE
TC3MAD
100
500
Positive Bias
100
Negative Bias
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
10
10
0·1
-25
0
25
50
75
100 125 150
1
10
50
TJ - Junction Temperature - °C
Terminal Voltage - V
Figure 8.
Figure 9.
5
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and T terminals
SURGE CURRENT
vs
DECAY TIME
TC3MAA
1000
100
10
2
10
100
1000
Decay Time - µs
Figure 10.
THERMAL INFORMATION
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
THERMAL RESPONSE
CURRENT DURATION
TI3MAC
TI4MAA
VGEN = 250 Vrms
100
10
1
RGEN = 10 to 150 W
SL Package
10
D Package
SL Package
D Package
1
0·1
0·0001 0·001 0·01
0·1
1
10
100 1000
1
10
100
1000
t - Power Pulse Duration - s
t - Current Duration - s
Figure 11.
Figure 12.
6
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a TISP are strongly dependent on junction temperature, TJ. Hence a
characteristic value will depend on the junction temperature at the instant of measurement. The values given
in this data sheet were measured on commercial testers, which generally minimise the temperature rise
caused by testing. Application values may be calculated from the parameters’ temperature curves, the power
dissipated and the thermal response curve (Z ).
q
lightning surge
wave shape notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an
exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage
or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave
shape is amplitude, rise time/decay time. A 50A, 5/310 µs wave shape would have a peak current value of
50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP surge current graph comprehends the wave
shapes of commonly used surges.
generators
There are three categories of surge generator type, single wave shape, combination wave shape and circuit
defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage
and short circuit current (e.g. 10/1000 µs open circuit voltage and short circuit current). Combination
generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current
(e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current) Circuit specified generators usually
equate to a combination generator, although typically only the open circuit voltage waveshape is referenced
(e.g. a 10/700 µs open circuit voltage generator typically produces a 5/310 µs short circuit current). If the
combination or circuit defined generators operate into a finite resistance the wave shape produced is
intermediate between the open circuit and short circuit values.
current rating
When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave
shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to
assess the required TISP surge capability. As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge is
changed to a 38 A, 5/310 µs waveshape when driving into a short circuit. Thus the TISP surge current
capability, when directly connected to the generator, will be found for the CCITT IX K17 waveform at 310 µs
on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
STANDARD
OPEN CIRCUIT
VOLTAGE
SHORT CIRCUIT
CURRENT
CCITT IX K17
CCITT IX K20
RLM88
VDE 0433
FTZ R12
1.5 kV, 10/700 µs
1 kV, 10/700 µs
1.5 kV, 0.5/700 µs
2.0 kV, 10/700 µs
2.0 kV, 10/700 µs
38 A, 5/310 µs
25 A, 5/310 µs
38 A, 0.2/310 µs
50 A, 5/200 µs
50 A, 5/310 µs
Any series resistance in the protected equipment will reduce the peak circuit current to less than the
generators’ short circuit value. A 2 kV open circuit voltage, 50 A short circuit current generator has an
effective output impedance of 40 W (2000/50). If the equipment has a series resistance of 25 W then the
surge current requirement of the TISP becomes 31 A (2000/65) and not 50 A.
7
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
APPLICATIONS INFORMATION
protection voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration.
This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate
V(BO) (250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output
resistance is 25 W. If the equipment has an additional series resistance of 20 W, the total series resistance
becomes 45 W. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, TJ , and the bias voltage, comprising
of the dc voltage, VD , and the ac voltage, Vd . All the capacitance values in this data sheet are measured
with an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure
13 When VD >> Vd the capacitance value is independent on the value of Vd . The capacitance is essentially
constant over the range of normal telecommunication frequencies.
NORMALISED CAPACITANCE
vs
RMS AC TEST VOLTAGE
AIXXAA
1.05
1.00
0.95
0.90
0.85
0.80
Normalised to Vd = 100 mV
DC Bias, VD = 0
0.75
0.70
1
10
100
1000
Vd - RMS AC Test Voltage - mV
Figure 13.
8
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
MECHANICAL DATA
D008
plastic small-outline package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
9
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
MECHANICAL DATA
SL002
2-pin plastic single-in-line package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly
10
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or
service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing
orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems
necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those
mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or
environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such
applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be
directed to TI through a local SC sales office.
In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be
provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any
patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
Copyright © 1997, Texas Instruments Incorporated
11
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