TISP4160LPR [TI]

160V, 2.5A, SILICON SURGE PROTECTOR, PLASTIC, LP003, TO-92, 3 PIN;
TISP4160LPR
型号: TISP4160LPR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

160V, 2.5A, SILICON SURGE PROTECTOR, PLASTIC, LP003, TO-92, 3 PIN

文件: 总7页 (文件大小:253K)
中文:  中文翻译
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TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
G
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
LP PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
A(T)  
NC  
B(R)  
1
2
3
V
V
(Z)  
(BO)  
DEVICE  
V
V
‘4160LP  
‘4180LP  
120  
145  
160  
180  
MDTRAB  
NC - No internal connection  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
G
G
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
Rated for International Surge Wave Shapes  
A(T)  
NC  
1
I
TSP  
A
2
3
WAVE SHAPE  
STANDARD  
8/20 µs  
ANSI C62.41  
RLM 88  
100  
38  
B(R)  
0.2/310 µs  
MD4XAF  
NC - No internal connection  
VDE 0433  
50  
10/700 µs  
CCITT IX K17  
38  
device symbol  
G
G
Package Options  
PACKAGE  
LP  
PACKING  
Bulk  
PART # SUFFIX  
None  
R
LP with fomed leads  
Tape and Reel  
UL Recognized  
description  
The TISP4xxxLP series is designed specifically  
for telephone equipment protection against  
lightning and transients induced by a.c. power  
lines. These devices consist of a bidirectional  
suppressor element connecting the A and B  
terminals. They will suppress inter-wire voltage  
transients.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation.  
Transients are initially clipped by zener action  
until the voltage rises to the breakover level,  
which causes the device to crowbar. The high  
crowbar holding current prevents d.c. latchup as  
the transient subsides.  
Copyright © 1997 Texas Instruments Limited  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, A Bourns Complany, under  
private label for Texas Instruments.  
1
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)  
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)  
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)  
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)  
5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs)  
Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)  
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A  
Junction temperature  
100  
50  
I
A
TSP  
38  
38  
I
2.5  
A rms  
A/µs  
°C  
TSM  
di /dt  
250  
T
T
150  
J
Operating free - air temperature range  
0 to 70  
-40 to +150  
260  
°C  
Storage temperature range  
T
°C  
stg  
Lead temperature 1.5 mm from case for 10 s  
T
°C  
lead  
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature  
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has  
returned to thermal equilibrium.  
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting  
loaded current waveform is specified.  
.
electrical characteristics, T = 25°C  
J
TISP4160  
TYP  
TISP4180  
TYP  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
MAX  
MIN  
MAX  
Reference zener  
voltage  
V
I = 1mA  
Z
120  
145  
V
Z
Temperaturecoefficient  
of reference voltage  
Breakover voltage  
o
V
0.1  
2.2  
0.1  
2.2  
%/ C  
Z
V
(see Notes 4 and 5)  
(see Note 4)  
160  
0.6  
3
180  
0.6  
3
V
A
(BO)  
I(BO) Breakover current  
0.15  
150  
0.15  
150  
V
Peak on-state voltage  
Holding current  
I = 5 A  
T
(see Notes 4 and 5)  
V
TM  
I
(see Note 4)  
mA  
H
Critical rate of rise of  
off-state voltage  
Off-state leakage  
current  
dv/dt  
(see Note 6)  
5
5
kV/µs  
I
V
V
=
50 V  
10  
10  
µA  
D
D
D
C
Off-state capacitance  
= 0  
f = 1 kHz  
70  
150  
70  
150  
pF  
off  
NOTES: 4. These parameters must be measured using pulse techniques, t = 100 µs, duty cycle 2%.  
w
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm  
(0.125 inch) from the device body.  
6. Linear rate of rise, maximum voltage limited to 80 % V (minimum).  
Z
thermal characteristics  
PARAMETER  
RθJA Junction to free air thermal resistance  
MIN  
TYP  
MAX  
UNIT  
156  
°C/W  
2
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
PARAMETER MEASUREMENT INFORMATION  
Figure 1. VOLTAGE-CURRENT CHARACTERISTICS FOR TERMINALS A AND B  
3
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
MECHANICAL DATA  
LP003 (TO-92)  
3-pin cylindical plastic package  
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic  
compound. The compound will withstand soldering temperature with no deformation, and circuit performance  
characteristics will remain stable when operated in high humidity conditions. Leads require no additional  
cleaning or processing when used in soldered assembly.  
LP003 Falls Within JEDEC  
TO-226AA Dimensions  
LP003 (TO-92)  
5,21  
4,44  
4,19  
3,17  
3,43 MIN.  
2,67  
2,03  
2,67  
2,03  
5,34  
4,32  
Seating Plane  
1,27  
(see Note A)  
12,7 MIN.  
0,56  
0,40  
1
3
1,40  
1,14  
0,41  
0,35  
2
2,67  
2,41  
ALL LINEAR DIMENSIONS IN MILLIMETERS  
NOTE A: Lead dimensions are not controlled in this area.  
MDXXAX  
4
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
MECHANICAL DATA  
LP003 (TO-92)  
3-pin cylindical plastic package  
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic  
compound. The compound will withstand soldering temperature with no deformation, and circuit performance  
characteristics will remain stable when operated in high humidity conditions. Leads require no additional  
cleaning or processing when used in soldered assembly.  
LP003 (TO-92) - Formed Leads Version  
LP003 Falls Within JEDEC  
TO-226AA Dimensions  
5,21  
4,44  
4,19  
3,17  
3,43 MIN.  
2,67  
2,03  
2,67  
2,03  
5,34  
4,32  
4,00 MAX.  
0,56  
0,40  
1
2
3
2,90  
2,40  
0,41  
0,35  
2,90  
2,40  
ALL LINEAR DIMENSIONS IN MILLIMETERS  
MDXXAR  
5
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
MECHANICAL DATA  
LPR  
tape dimensions  
LP Package (TO-92) Tape (Formed Lead Version)  
5,21  
4,44  
4,19  
3,43 MIN.  
3,17  
2,67  
2,03  
2,67  
2,03  
5,34  
4,32  
4,00 MAX.  
0,56  
0,41  
0,35  
0,40  
13,70  
11,70  
0,50  
0,00  
32,00  
2,50 MIN.  
27,68  
17,66  
23,00  
16,50  
15,50  
11,00  
8,50  
9,75  
8,50  
19,00  
5,50  
19,00  
17,50  
2,90  
2,40  
4,30  
ø
3,70  
2,90  
2,40  
6,75  
5,95  
13,00  
12,40  
ALL LINEAR DIMENSIONS IN MILLIMETERS  
MDXXAS  
6
TISP4160LP, TISP4180LP  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
APRIL 1987 - REVISED SEPTEMBER 1997  
IMPORTANT NOTICE  
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or ser-  
vice without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders,  
that the information being relied on is current.  
TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in  
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems neces-  
sary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those man-  
dated by government requirements.  
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or  
environmental damage (“Critical Applications”).  
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE  
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.  
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such  
applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be  
directed to TI through a local SC sales office.  
In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be  
provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents  
or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any  
patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination,  
machine, or process in which such semiconductor products or services might be or are used.  
Copyright © 1997, Texas Instruments Incorporated  
7

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