NPT25100 [TE]
Gallium Nitride 28V, 125W RF Power Transistor;
| 型号： | NPT25100 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 125W RF Power Transistor |
| 文件： | 总13页 (文件大小：1064K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT25100
Gallium Nitride 28V, 125W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE
and other applications from 2100 – 2700MHz
• 125W P3dB Peak envelope power
• 90W P3dB CW power
• 10W linear power @ 2.0% EVM for single carrier
OFDM, 10.3dB peak/avg, 10MHz channel band-
width, 16.5dB gain, 26% efficiency
• Characterized for operation up to 32V
• 100% RF tested
2100 – 2700 MHz
125 Watt, 28 Volt
GaN HEMT
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to ECCN 3A982.a.1 export control
RF Specifications (CW): VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
GSS
h
Average Output Power at 3dB Gain Compression
Small Signal Gain
80
14
55
90
16.5
62
-
-
-
W
dB
%
Drain Efficiency at 3dB Gain Compression
Typical 2-Tone Performance: VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25°C
Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol
Parameter
Typ
Units
P3dB,PEP
P1dB,PEP
PIMD3
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Peak Envelope Power at -35dBm IMD3
125
90
W
W
W
80
Typical OFDM Performance: VDS = 28V, IDQ = 600mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2500 to 2700MHz. POUT,AVG = 10W, TC=25°C.
Symbol
Parameter
Typ
Units
GP
h
Power Gain
16.5
26
dB
%
Drain Efficiency
Error Vector Magnitude
EVM
2.0
%
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NDS-001 Rev 6, April 2013
NPT25100
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA)
VBDS
IDLK
100
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
9
18
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 36mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.13
-1.3
-1.0
0.14
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 270mA)
Drain Current
ID,MAX
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
-
21.0
-
A
Thermal Resistance Specification
Symbol
Parameter
Min
Typ
Max
Units
Thermal Resistance (Junction-to-Case),
TJ = 145 °C
qJC
-
1.75
-
°C/W
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
180
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
100
TSTG
TJ
-65 to 150
200
°C
°C
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
HBM
MM
2 (>2000V)
M2 (>100V)
NPT25100
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NPT25100
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance,
VDS = 28V, IDQ = 600mA
Frequency (MHz)
ZS (W)
ZL (W)
2140
2300
2400
2500
2600
2700
12.1 - j20.0
10.0 - j3.0
9.5 - j3.0
9.0 - j3.0
8.5 - j3.0
8.0 - j3.0
2.6 - j2.6
2.5 - j2.3
2.5 - j2.5
2.5 - j2.7
2.5 - j3.1
2.5 - j3.3
Z
is the source impedance
presented to the device.
S
Z is the load impedance
L
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 600mA
NPT25100
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NPT25100
Figure 2 - Typical CW Performance in Load-Pull
System, VDS = 28V, IDQ = 600mA,
Figure 3 - Typical CW Performance in Load-Pull
System, VDS = 28V & 32V, IDQ = 600mA,
Frequency = 2300 to 2700MHz
Frequency = 2500MHz, Impedances Held Constant
Figure 4 - Typical CW Performance
in Load Pull System,
Figure 5 - Typical CW and PEP Performance in
Load-Pull System, VDS = 28V, IDQ = 600mA,
Frequency = 2500MHz, Tone Spacing = 1MHz
VDS = 28V, IDQ = 600mA
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NPT25100
Figure 6 - Typical IMD3 Performance in
Load-Pull System, VDS = 28V, IDQ = 600mA,
Frequency = 2500MHz, Tone Spacing = 1MHz
Figure 7 - Typical CW, PEP, and Pulsed Performance
in Load-Pull System, Pulse Width = 10ms,
Duty Cycle = 1%, VDS = 28V, IDQ = 600mA,
Frequency = 2500MHz, Tone Spacing = 1MHz
Figure 8 - Typical Pulsed CW Performance in
Load-Pull System, 1% Duty Cycle, VDS = 28V,
IDQ = 600mA, Frequency = 2500MHz
Figure 9 - Typical OFDM Performance in
Load-Pull System, VDS = 28V & 32V,
IDQ = 600mA, Frequency = 2500MHz
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NPT25100
Figure 10 - Typical OFDM Performance in
Load-Pull System, POUT,AVG = 10W,
VDS = 28V, IDQ = 600mA
Figure 11 - Typical LTE (Long Term Evolution, 20MHz
channel), Nitronex Test Fixture, VDS = 28V,
IDQ = 600mA, Frequency = 2600MHz
Figure 12 - OFDM Performance in Nitronex
Test Fixture as a Function of IDQ, VDS = 28V,
IDQ = 500 to 1000mA, Frequency = 2500MHz
Figure 13 - Typical W-CDMA Performance in
Load-Pull System, VDS = 28V, IDQ = 600mA,
Frequency = 2110 to 2170MHz
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NDS-001 Rev 6, April 2013
NPT25100
Figure 14 - OFDM performance in Nitronex Test
Fixture as a Function of IDQ, VDS = 28V,
IDQ = 500mA to 1000mA, Frequency = 2500MHz
Figure 15 - OFDM performance in Nitronex
Test Fixture as a Function of Case Temperature,
VDS = 28V, IDQ = 600mA, Frequency = 2500MHz
Figure 17 - Quiescient Gate Voltage (VGSQ) Required
to Reach IDQ as a Function of Case Temperature,
Measured in Nitronex Test Fixture at VDS = 28V
Figure 16 - S-parameters Measured in Nitronex
Test Fixture, VDS = 28V, IDQ = 600mA
NPT25100
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NPT25100
Figure 18 - Power Derating Curve
Figure 19 - MTTF of NRF1 Devices as a
Function of Junction Temperature
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NDS-001 Rev 6, April 2013
NPT25100
C9
C10
V
GS
V
DS
R2
C5
C4
C8
C7
C6
C3
R1
RF
IN
RF
OUT
C2
C1
C14
C13
NITRONEX
CORPORATION
NBD-019_Rev2
PA1
Figure 20 - APP-NPT25100-25 2500MHz Demonstration Board
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NDS-001 Rev 6, April 2013
NPT25100
VDS
VDS
+
C12
12pF
0805
C10
270uF
R2
VGS
0.33
VGS
0805
C3
C4
C5
C11
12pF
0805
C9
1uF
0.1uF
1206
0.01uF
1206
+
1812
150uF
C8
C7
C6
1uF
1812
0.01uF
1206
0.1uF
1206
R1
10
0805
200mils
65mils
300mils
65mils
RFOUT
PA1
168mils
65mils
NPT25100
C2
RFIN
C1
D
G
RFOUT
TL5
580mils
TL6
TL7
RFIN
TL1
207mils
610mils
TL2
S
1.0pF
0805
3.3pF
0805
410mils
C15
.8pF
0805
C16
1.0pF
0805
C13
C14
0.9pF
0805
1.8pF
0805
Figure 21 - APP-NPT25100-25 2500MHz Demonstration Board Equivalent Circuit
Table 2: APP-NPT25100-25 2500MHz Demonstration Board Bill of Materials
Name
Value
3.3pF
1.2pF
1uF
Tolerance
+/- 0.1pF
+/- 0.1pF
20%
Vendor
ATC
Vendor Number
ATC600F3R3B
C1
C2
ATC
ATC100B1R2BT
C3
Panasonic
Kemet
ECJ-5YB2A105M
C1206C104K1RACTU
12061C103KAT2A
ECJ-5YB2A105M
C1206C104K1RACTU
12061C103KAT2A
UPW1C151MED
C4
0.1uF
10%
C5
0.01uF
1uF
10%
AVX
C6
10%
Panasonic
Kemet
C7
0.1uF
10%
C8
0.01uF
150uF
270uF
33pF
10%
AVX
C9
20%
Nichicon
United Chmi-Con
ATC
C10
20%
ELXY630ELL271MK25S
ATC600F330B
C11
5%
C12
33pF
5%
ATC
ATC600F330B
C13
0.9pF
1.8pF
Do Not Place
0.8pF
--
+/- 0.1pF
+/- 0.1pF
ATC
ATC600F0R9B
C14
ATC
ATC600F1R8B
C15
C16
PA1
+/- 0.1pF
ATC
--
ATC600F0R8B
NPT25100B
--
1%
1%
--
R1
10 ohm
0.033 ohm
--
Panasonic
Panasonic
Alberta Printed Circuits
Rogers
ERJ-6ENF10R0V
ERJ-6RQFR33V
NBD-019_Rev2
R2
NBD-019_Rev2
Substrate
R04350, t = 30mil er = 3.5
NPT25100
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NDS-001 Rev 6, April 2013
NPT25100
1
Ordering Information
Part Number
Description
NPT25100B
NPT25100P
NPT25100 in AC780B-2 Metal-Ceramic Bolt-Down Package
NPT25100 in AC780P-2 Metal-Ceramic Pill Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 22 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT25100
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NDS-001 Rev 6, April 2013
NPT25100
Figure 23 - AC780P-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT25100
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NDS-001 Rev 6, April 2013
NPT25100
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
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information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
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accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
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NPT25100
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NDS-001 Rev 6, April 2013
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