NPTB00004A_15 [TE]
DC-6 GHz HEMT;
| 型号： | NPTB00004A_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | DC-6 GHz HEMT |
| 文件： | 总10页 (文件大小：2274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPTB00004A
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Broadband operation from DC-6 GHz
28V Operation
Industry Standard Plastic Package
High Drain Efficiency (>55%)
Drop in Replacement for NPTB00004
Applications
Broadband General Purpose
Defense Communications
Land Mobile Radio
DC-6 GHz
5W
GaN HEMT
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
Product Description
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 5W
(37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below
3GHz, the NPTB00004A is a drop in replacement for the NPTB00004.
RF Specifications (CW, 2.5 GHz): VDS = 28V, IDQ = 50mA, TC= 25°C
Symbol
Parameter
Min
Typ
Max
Units
GSS
Small-signal Gain
-
16
-
dB
PSAT
SAT
GP
Saturated Output Power
-
-
37.1
63.7
14.8
57
-
-
-
-
-
dBm
%
Efficiency at Saturated Output Power
Gain at POUT = 4W
12.8
45
-
dB
%
Drain Efficiency at POUT = 4W
Drain Voltage
VDS
28
V
Ruggedness: Output Mismatch, all phase angles
VSWR = 15:1, No Device Damage
NDS-036 Rev. 2, 011414
Page 1
NPTB00004A
DC Specifications: TC = 25°C
Symbol
Off Characteristics
IDLK Drain-Source Leakage Current
Parameter
Min
Typ
Max
Units
-
-
-
-
2
1
mA
mA
(VGS=-8V, VDS=100V)
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
On Characteristics
VT
Gate Threshold Voltage
(VDS=28V, ID=2mA)
-2.5
-1.6
-1.3
1.6
1.4
-0.5
V
V
VGSQ
RON
Gate Quiescent Voltage
(VDS=28V, ID=50mA)
-2.1
-0.3
On Resistance
(VDS=2V, ID=15mA)
-
-
-
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
A
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
Thermal Resistance (Junction-to-Case),
TJ = 180 °C
15
°C/W
RJC
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
4
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
11.6
TSTG
TJ
-65 to 150
200
°C
°C
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
HBM
MSL
Class 1A
MSL-3
NDS-036 Rev. 2, 011414
Page 2
NPTB00004A
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=50mA, TC=25C unless otherwise noted
Optimum Source and Load Impedances:
(CW Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
(MHz)
PSAT (W)
GSS (dB)
Drain Efficiency
@ PSAT (%)
ZS ()
ZL ()
900
6.1 + j15
5.0 - j5.0
5.0 - j10
10 - j60
72 + j36
14 + j17
13 - j12
14 - j34
7.0
6.7
6.7
6.5
23
19
17
11
68
66
62
52
2200
2700
5800
Figure 1: CW Power/Drain Efficiency
Tradeoff Impedances, ZO=50
25
20
15
10
70
60
50
40
30
20
10
0
900MHz
2200MHz
2700MHz
5800MHz
900MHz
2700MHz
5800MHz
2200MHz
5
15
20
25
30
35
40
15
20
25
30
35
40
POUT (dBm)
POUT (dBm)
Figure 3: Efficiency vs. POUT
Figure 2: Gain vs. POUT
NDS-036 Rev. 2, 011414
Page 3
NPTB00004A
2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=50mA, TC=25C, unless otherwise noted)
Figure 4: Component Placement of 2.5 GHz Narrowband Circuit for NPTB00004A
Reference
C1, C6
C2, C7
C3, C8
C4, C9
C5
Value
1µF
Manufacturer
AVX
Part Number
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ECE-V1JA101P
600F330JT
0.1µF
Murata
AVX
0.01µF
1000pF
100µF
AVX
Panasonic
ATC
C10, C11
C12
33pF
2.4pF
ATC
600F2R4JT
C13
2.7pF
ATC
600F2R7JT
C14
3.3pF
ATC
600F3R3JT
C15
1.5pF
ATC
600F1R5JT
R1
200Ω
Panasonic
Panasonic
Rogers
ERJ-2GEJ201X
ERJ-6BWJR033W
Nitronex NBD-068r2
R2
0.033Ω
RO4350, R=3.5, 0.020”
PCB
NDS-036 Rev. 2, 011414
Page 4
NPTB00004A
Typical Performance in 2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=50mA, f=2.5GHz, TC=25C, unless otherwise noted)
Figure 5. Electrical Schematic of 2.5 GHz Narrowband Circuit for NPTB00004A
(For RF Tuning details see Component Placement Diagram Figure 4)
18
17
16
15
14
13
12
11
60
-40oC
50
25oC
85oC
40
30
20
-40oC
25oC
85oC
10
0
15
20
25
30
35
40
15
20
25
30
35
40
POUT (dBm)
POUT (dBm)
Figure 6: Gain vs. POUT
Figure 7: Drain Efficiency vs. POUT
-1.1
-1.2
-1.3
-1.4
-1.5
15
10
5
25mA
50mA
75mA
0
-50
-25
0
25
50
75
100
25
50
75
100
125
150
175
Temperature (oC)
Case Temperature (oC)
Figure 8: Quiescent VGS vs. Temperature
Figure 9: Power De-rating Curve
(TJ = 200°C, TC > 25°C)
NDS-036 Rev. 2, 011414
Page 5
NPTB00004A
Typical Performance in 2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=50mA, f=2.5GHz, TC=25C, unless otherwise noted)
-15
-20
-25
-30
-35
-40
-45
18.0
17.0
16.0
15.0
17mA
25mA
50mA
75mA
100mA
17mA
25mA
50mA
75mA
100mA
14.0
13.0
12.0
0.1
1
10
0.1
1
10
POUT (W-PEP)
POUT (W-PEP)
Figure 10: 2-Tone IMD3 vs. POUT vs. IDQ
Figure 11: 2-Tone Gain vs. POUT vs. IDQ
(1MHz Tone Spacing)
(1MHz Tone Spacing)
-10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-20
-30
-40
-50
-60
0.1
1
10
POUT (W-PEP)
Figure 12: 2-Tone IMD vs. POUT
(1MHz Tone Spacing)
NDS-036 Rev. 2, 011414
Page 6
NPTB00004A
100-800 MHz Broadband Circuit
(CW, VDS=28V, IDQ=50mA, TC=25C, unless otherwise noted)
Figure 13: Component Placement of 100-800 MHz Broadband Circuit for NPTB00004A
Reference
C1, C8
C2, C7
C3, C6, C10
C4, C5,
C9
Value
1µF
Manufacturer
AVX
Part Number
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ECE-V1JA101P
600F241F
0.1µF
Murata
AVX
0.01µF
1000pF
100µF
AVX
Panasonic
ATC
C11, C14
C12
240pF
10pF
ATC
600F100B
C13, C15
F1
1.5pF
ATC
600F1R5JT
Material 73
100nH
Fair-Rite
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Panasonic
Susumu
Stackpole
Panasonic
Rogers
2673000801
L1
0805CS101X
L2
100nH
1812SMS-R10
A02TKLJ
L3, L5
L4
5nH
2.5nH
A01TKLJ
R1
300Ω
ERJ-14YJ301U
RL1220S-R33-F
RHC2512FT470R
ERJ-14YJ100U
Nitronex NBD-113r1
R2
0.33Ω
R3
470Ω
R4
10Ω
PCB
RO4350, R=3.5, 0.020”
NDS-036 Rev. 2, 011414
Page 7
NPTB00004A
Typical Performance in 100-800 MHz Broadband Circuit
(CW, VDS=28V, IDQ=50mA, TC=25C, unless otherwise noted)
Figure 14. Electrical Schematic of 100-800 MHz Broadband Circuit for NPTB0004A
(For RF Tuning details see Component Placement Diagram Figure 13)
25
20
15
10
5
30
25
20
15
10
5
55
50
45
40
35
30
45
40
35
30
25
20
Gain
Drain Eff
PSAT
Gain
Drain Eff
0
100
200
300
400
500
600
700
800
100
200
300
400
500
600
700
800
Frequency (MHz)
Frequency (MHz)
Figure 16: Performance vs. Frequency
Figure 15: Performance vs. Frequency
(POUT = PSAT
(POUT = 36dBm)
)
30
25
20
15
10
16
15
14
13
12
11
50
40
30
20
10
0
0
-10
-20
-30
-40
S21
S11
S22
Gain
Drain Eff
15
20
25
30
POUT (dBm)
35
40
100
200
300
400
500
600
700
800
Frequency (MHz)
Figure 17: Performance vs. POUT
Figure 18: Small Signal s-parameters vs. Frequency
(f = 600MHz)
NDS-036 Rev. 2, 011414
Page 8
NPTB00004A
Figure 19 - SOIC-8NE Plastic Package Dimensions (all dimensions in inches [millimeters])
Pin
Function
2, 3
6, 7
Gate — RF Input
Drain — RF Output
Exposed Pad Source — Ground
1, 4, 5, 8 No Connect*
* All No Connect pins may be left floating or grounded
NDS-036 Rev. 2, 011414
Page 9
NPTB00004A
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NDS-036 Rev. 2, 011414
Page 10
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