NPT35015 [TE]
Gallium Nitride 28V, 18W RF Power Transistor;
| 型号： | NPT35015 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 18W RF Power Transistor |
| 文件： | 总10页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT35015
Gallium Nitride 28V, 18W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, Pulsed, WiMAX, and other ap-
plications from 3300 - 3800 MHz
• 18W P3dB CW Power
• 25W P3dB peak envelope power
• 1.7W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average, 10.3dB @ 0.01%
probability on CCDF, 10.5dB gain, 18%
drain efficiency
3300 – 3800 MHz
18 Watt, 28 Volt
GaN HEMT
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, Tone spacing = 1MHz, TC = 25°C.
Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB,PEP
P1dB,PEP
GSS
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Small Signal Gain
14
-
18
10
11
48
-
-
-
-
W
W
10
43
dB
%
h
Peak Drain Efficiency at POUT = P3dB
RF Specifications (CW): VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, TC = 25°C, Measured in Load Pull System
Symbol
Parameter
Typ
Units
P3dB
Average Output Power at 3dB Gain Compression
Pulsed Output Power at 3dB Gain Compression
Pulsed Output Power at 1dB Gain Compression
18
20
15
W
W
W
P3dB,Pulsed
P1dB,Pulsed
Typical OFDM Performance: VDS = 28V, IDQ = 200mA, POUT,AVG = 1.7W, single carrier OFDM waveform 64-QAM
3/4, 8 burst, 20ms frame, 15ms frame data, 3.5MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 3300 to 3800MHz. TC=25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol
Parameter
Typ
Units
GP
h
Power Gain
10.5
18
dB
%
Drain Efficiency
Error Vector Magnitude
Input Return Loss
EVM
IRL
2.0
10
%
dB
NPT35015
Page 1
NDS-005 Rev 5, April 2013
NPT35015
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA)
VBDS
100
-
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
IDLK
4
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 8mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.45
-1.3
-1.0
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 200mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 60mA)
0.50
Drain Current
ID
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2V)
-
5.0
-
A
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
PT
Drain-Source Voltage
100
-10 to 3
28
V
V
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
W
qJC
6.25
°C/W
°C
TSTG
TJ
-65 to 150
200
Operating Junction Temperature
°C
HBM
MM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
1A (>250V)
M1 (>50V)
NPT35015
Page 2
NDS-005 Rev 5, April 2013
NPT35015
Table 1: Optimum Source and Load Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA
Frequency
Drain Efficiency
(%)
Z (W)
Z (W)
P (W)
OUT
Gain (dB)
S
L
(MHz)
33001
34001
35001
36001
37001
38001
5.4 - j10.3
5.0 - j10.7
4.4 - j11.2
4.0 - j12.5
3.5 - j13.4
3.5 - j14.6
2.9 - j2.5
2.9 - j2.6
2.8 - j2.7
2.8 - j3.3
3.0 - j3.8
3.2 - j4.2
1.7
10.9
11.0
10.9
10.9
10.8
10.7
19
22
21
20
20
20
1.8
1.7
1.7
1.8
1.8
Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Figure 1 - Optimal Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA
NPT35015
Page 3
NDS-005 Rev 5, April 2013
NPT35015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =200mA, TA=25°C unless otherwise noted.
DQ
Figure 2 - CW, pulsed CW, and PEP,
Figure 3 - CW Power Sweep,
3500MHz, Constant Impedance States
3500MHz
Figure 4 - Typical OFDM Performance
Figure 5 - Typical OFDM Performance
POUT = 1.5W
at 3500MHz versus IDQ
NPT35015
Page 4
NDS-005 Rev 5, April 2013
NPT35015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =200mA, TA=25°C unless otherwise noted.
DQ
Figure 6 - Typical IMD3 Performance,
3500MHz
Typical Device Characteristics
VDS=28V, I =200mA, TA=25°C unless otherwise noted.
DQ
Figure 8 - MTTF of NRF1 Devices
Figure 7 - Power Derating Curve
NPT35015
Page 5
NDS-005 Rev 5, April 2013
NPT35015
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
VVDS
VGS
VGS
VDS
+
R2
0.33
C15
150uF
C1
0.1uF
C2
0.01uF
C3
1000pF
C10
5.6pF
C9
5.6pF
C16
270uF
R1
10
+
40mils
600mils
C8
1.0uF
C7
0.01uF
C6
1000pF
C5
100pF
C4
5.6pF
35mils
C11
5.6pF
520mils
RFIN
RFOUT
RFOUT
RFIN
595mils
240mils
68mils
240mils
C14
5.6pF
68mils
40mils
80mils
340mils
90mils
430mils
490mils
175mils
C3
0.6pF
NPT35015
C12
0.3pF
Figure 9 - AD-006 Demonstration Board and Schematic
Table 2: AD-006 Demonstration Board Bill of Materials
Name
C1
Value
0.1uF
Tolerance
10%
Vendor
Kemet
Vendor Number
C1206C104K1RACTU
12061C103KAT2A
C2, C7
C3, C6
C5
0.01uF
1000pF
100pF
1.0uF
10%
AVX
10%
Kemet
C0805C102K1RACTU
C0805C101K1RACTU
ECJ-5YB2A105M
10%
Kemet
C8
10%
Panasonic
C4, C9, C10,
C11, C14
5.6pF
+/- 0.1pF
ATC
ATC600F5R6B
C12
C13
0.3pF
0.6pF
+/- 0.1pF
+/- 0.1pF
20%
20%
1%
ATC
ATC
ATC600F0R3B
ATC600F0R6B
C15
150uF
270uF
10 ohm
0.33 ohm
--
Nichicon
United Chemi-Con
Panasonic
Panasonic
--
UPW1C151MED
ELXY630ELL271MK25S
ERJ-2RKF10R0X
ERJ-6RQFR33V
NPT35015D
C16
R1
R2
1%
PA1
--
Substrate
Rogers
R04350, t = 30mil er = 3.5
NPT35015
Page 6
NDS-005 Rev 5, April 2013
NPT35015
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
50
45
40
35
30
25
20
15
10
5
5
4
3
2
1
0
50
45
40
35
30
25
20
15
10
5
5
4
3
2
1
0
Gain (dB)
Gain (dB)
Efficiency (%)
EVM (%)
Efficiency (%)
EVM (%)
0
0
15
20
25
30
35
40
15
20
25
30
35
40
Pout (dBm)
Pout (dBm)
Figure 10 - Gain, Efficiency, EVM at 3400MHz
Figure 11 - Gain, Efficiency, EVM at 3500MHz
50
5
4
3
2
1
0
45
Gain (dB)
Efficiency (%)
40
EVM (%)
35
30
25
20
15
10
5
0
15
20
25
30
35
40
Pout (dBm)
Figure 12 - Gain, Efficiency, EVM at 3600MHz
NPT35015
Page 7
NDS-005 Rev 5, April 2013
NPT35015
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
-14
1
-24
-34
-44
-54
-64
-74
-84
-94
3489.50 Mhz
1.75 MHz/div
3510.50 MHz
Figure 14 - Typical S and S21
11
Figure 13 - ETSI Mask Compliance in Nitronex
Demonstration Board at 3500MHz and POUT = 1.5W
NPT35015
Page 8
NDS-005 Rev 5, April 2013
NPT35015
Ordering Information
Part Number
Order Multiple Description
NPT35015DT
NPT35015DR
97
Tube; NPT35015 in D (PSOP2) Package
1500
Tape and Reel; NPT35015 in D (PSOP2) Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 15 - D Package Dimensions and Pinout
Inches
Min
Millimeters
A
Dim
Max
0.196
0.157
0.123
0.870
0.244
Min
Max
4.98
3.99
3.12
22.1
6.19
A
B
0.189
0.150
0.107
0.071
0.230
4.80
3.81
2.72
1.80
5.84
C
1. Gate
C
D
E
8
1
7
6
3
5
4
2. Gate
3. Gate
4. Gate
5. Drain
D
B
E
9
6. Drain
f
0.050 BSC
1.270 BSC
D/2
7. Drain
8. Drain
F
0.0138
0.055
0.000
0.075
0.016
0°
0.0192
0.061
0.004
0.098
0.035
8°
0.35
1.40
0.00
1.91
0.41
0°
0.49
1.55
0.10
2.50
0.89
8°
2
9. Source Pad
G
G1
H
L
(Bottom)
A/2
Chamfer
H
G
m
G1
SEATING
PLANE
m
L
SEATING PLANE
F
(8X)
f
(6X)
Figure 16 - Mounting Footprint
.150
.055
.105
.100
Solder Paste
.020" X .040"
(8X Typ)
R.016 (4X Typ)
.140 .145 .176
.180
Solder Paste
.080" X .120"
(Typ)
Heat Sink
Pedestal
.030
Solder Mask
.005" Relief
(Typ)
PWB Pad
(8X Typ)
PWB Cutout
NPT35015
Page 9
NDS-005 Rev 5, April 2013
NPT35015
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
customer products and applications, customers should provide adequate design and operating safeguards.
Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right,
copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in
which Nitronex products or services are used.
Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the
information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the
contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements.
Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical
implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex,
LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its
officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent
regarding the design or manufacture of said products.
Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC.
All other product or service names are the property of their respective owners.
©Nitronex, LLC 2012. All rights reserved.
NPT35015
Page 10
NDS-005 Rev 5, April 2013
相关型号：
©2020 ICPDF网 联系我们和版权申明