NPTB00004 [TE]
Gallium Nitride 28V, 5W RF Power Transistor;
| 型号： | NPTB00004 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 5W RF Power Transistor |
| 文件： | 总10页 (文件大小：953K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPTB00004
Gallium Nitride 28V, 5W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE,
and other applications from DC to 6GHz
• 100% RF Tested at 2500MHz
• 5W P3dB CW Power
• 15.5dB Power Gain
DC - 6000MHz
5 Watt, 28 Volt
GaN HEMT
• Low cost, surface mount SOIC package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 Export Control
2-Tone Specifications: VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25°C
Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P1dB,PEP
GSS
Peak Envelope Power at 1dB Compression
Small Signal Gain
5.0
14.5
-
7.5
15.5
2.5
60
-
-
-
-
W
dB
W
PIMD3
h
Peak Envelope Power at -35dBc IMD3
Drain Efficiency at 3dB Compression
55
%
RF Performance (CW): VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, TC = 25°C, Measured in Nitronex
Test Fixture
Symbol
P3dB
P1dB
h
Parameter
Typ
5.1
2.9
56
Units
W
Average Output Power at 3dB Compression
Average Output Power at 1dB Compression
Drain Efficiency at 3dB Compression
W
%
OFDM Performance: VDS = 28V, IDQ = 100mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame
data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3500MHz, POUT,AVG
=
24dBm, TC = 25°C. Measured in Load Pull System
Symbol
Parameter
Typ
Units
GP
Power Gain
11.2
dB
h
Drain Efficiency
9
%
%
EVM
Error Vector Magnitude
1.0
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NPTB00004
DC Specifications: TC=25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 2mA)
VBDS
IDLK
100
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
0.5
2
mA
On Characteristics
VT
VGSQ
RON
ID
Gate Threshold Voltage
(VDS = 28V, ID = 2mA)
-2.0
-1.8
-
-1.5
-1.3
2.0
1.3
-1.0
-0.8
2.2
-
V
V
W
A
Gate Quiescent Voltage
(VDS = 28V, ID = 50mA)
On Resistance
(VGS = 2V, ID = 15mA)
Drain Current
1.1
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2V)
Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted
Units
Symbol
Parameter
Max
VDS
VGS
PT
Drain-Source Voltage
100
-10 to 3
7.6
V
V
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
W
qJC
23
°C/W
°C
TSTG
TJ
-65 to 150
200
Operating Junction Temperature
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
1A (>250V)
M1(>50V)
MM
Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of 3 at 260 °C Package Peak Temperature
MSL
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Load-Pull Data, Reference Plane at Device Leads
VDS=28V, TA=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances (VDS = 28V)
Frequency
ZS (W)
ZL (W)
I
(mA)
Optimized Tuning Condtion
DQ
900
1800
2140
2500
3500
900
9.2 + j23.8
5.2 + j0.5
5.0 - j2.6
52.6 + j22.8
24.5 + j18.3
17.1 + j15.0
14.7 + j10.0
11.2 + j4.7
59.5 + j33.7
34.5 + j48.8
25.4 + j36.4
12.2 + j25.8
13.2 + j20.4
6.6 + j10.5
10.7 - j4.9
50
50
CW Power and Efficiency
CW Power and Efficiency
50
CW Power and Efficiency
5.4 - j10.5
5.0 - j21.0
21.9 + j43.4
13.1 + j24.3
5.4 + j17.3
4.0 + j6.8
50
CW Power and Efficiency
50
CW Power and Efficiency
100
100
100
100
100
100
100
100
100
100
W-CDMA, POUT, Efficiency, -45dBc ACPR
W-CDMA, POUT, Efficiency, -45dBc ACPR
W-CDMA, POUT, Efficiency, -45dBc ACPR
LTE, POUT, Efficiency, -45dBc ACPR
OFDM, Maximum POUT, 1.5% EVM
OFDM, Maximum POUT, 1.5% EVM
OFDM, Maximum POUT, 1.5% EVM
OFDM, Maximum POUT, 1.5% EVM
OFDM, Maximum POUT, 1.5% EVM
OFDM, Maximum POUT, 1.5% EVM
1800
2140
2600
2500
3500
5100
5200
5700
5800
5.0 + j16.2
4.1 - j0.6
17.8 - j16.4
21.5 - j29.0
10.2 - j13.2
11.0 - j16.3
11.9 - j4.8
11.3 - j17.0
12.1 - j15.3
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Figure 1 - Impedances for Optimum CW Power, VDS = 28V, IDQ = 50mA
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Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =50mA, TA=25°C unless otherwise noted.
DQ
Figure 3 - Typical CW Performance
Figure 2 - Typical CW Performance
Frequency = 2500MHz
Frequency = 900MHz
Figure 5 - Typical CW Performance
Figure 4 - Typical CW Performance
Frequency = 900 to 3500MHz
Frequency = 3500MHz
Figure 6 - Typical CW Performance
Figure 7 - Typical OFDM Performance
Over Temperature, Frequency = 2500MHz
I
DQ = 100mA, Frequency = 2500MHz
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Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =50mA, TA=25°C unless otherwise noted.
DQ
Figure 8 - Typical OFDM Performance
Figure 9 - Typical W-CDMA Performance
IDQ = 100mA, Frequency = 3500MHz
IDQ = 100mA, Frequency = 900MHz
Figure 11 - Typical W-CDMA Performance
Figure 10 - Typical W-CDMA Performance
IDQ = 100mA, Frequency = 2140MHz
IDQ = 100mA, Frequency = 1800MHz
Figure 12 - Typical LTE Performance
I
DQ = 100mA, Frequency = 2600MHz
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Typical Device Characteristics
VDS=28V, I =50mA, TA=25°C unless otherwise noted.
DQ
Figure 14 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 13 - Power Derating Curve
Figure 15 - Quiescient Gate Voltage (VGSQ
)
Required to Reach IDQ = 50mA as a
Function of Ambient Temperature
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Figure 16 - APP-NPTB00004-25 2500MHz Demonstration Board
Figure 17 - APP-NPTB00004-25 2500MHz Demonstration Board Equivalent Circuit
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Table 2: APP-NPTB00004-25 2500MHz Demonstration Board Bill of Materials
Name
Value
10uF
Tolerance
20%
10%
10%
10%
10%
5%
Vendor
AVX
Vendor Number
TAJA106M016R
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ATC600F330B
C1
C2
1uF
AVX
C3
0.1uF
Murata
AVX
C4
0.01uF
0.001uF
33pF
C5
AVX
C6
ATC
C7
100uF
1uF
20%
10%
10%
10%
10%
5%
Panasonic
AVX
ECE-V1JA101P
C8
C9
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ATC600F330B
0.1uF
Murata
AVX
C10
0.01uF
0.001uF
33pF
C11
AVX
C12
ATC
C13
2.7pF
10pF
+/- 0.1pF
1%
ATC
ATC600F2R7B
C14
ATC
ATC600F100B
C15
0.8pF
3.3pF
200 ohm
0 ohm
0.033 ohm
--
+/-0.1pF
+/-0.1pF
1%
ATC
ATC600F0R8B
C16
ATC
ATC600F3R3B
R1
Panasonic
Panasonic
Panasonic
Alberta Printed Circuits
Rogers
ERJ-2GEJ201X
R3, R5
R4
--
ERJ-2GE0R00X
ERJ-6BWJR033W
NBD-012_Rev1
1%
NBD-012_Rev1
Substrate
--
R04350, t = 30mil er = 3.5
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1
Ordering Information
Part Number
Order Multiple Description
NPTB00004DT
NPTB00004DR
97
Tube; NPTB00004 in D (PSOP2) Package
1500
Tape and Reel; NPTB00004 in D (PSOP2) Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
D Package Dimensions and Pinout
Inches
Min
Millimeters
Dim
Max
0.196
0.157
0.123
0.087
0.244
Min
Max
4.98
3.99
3.12
2.21
6.19
A
A
B
0.189
0.150
0.107
0.071
0.230
4.80
3.81
2.72
1.80
5.84
C
1. NC
C
D
E
8
1
7
6
3
5
4
2. Gate
3. Gate
4. NC
5. NC
D
B
E
9
6. Drain
f
0.050 BSC
1.270 BSC
D/2
7. Drain
F
0.0138
0.055
0.000
0.0075
0.016
0°
0.0192
0.061
0.004
0.0098
0.035
8°
0.35
1.40
0.00
0.19
0.41
0°
0.49
1.55
0.10
0.25
0.89
8°
8. NC
2
9. Source Pad
G
G1
H
L
(Bottom)
A/2
Chamfer
H
G
m
G1
SEATING
PLANE
m
L
SEATING PLANE
F
(8X)
f
(6X)
Mounting Footprints
.150
.055
.105
.100
Solder Paste
.020" X .040"
(8X Typ)
R.016 (4X Typ)
.140 .145 .176
.180
Solder Paste
.080" X .120"
(Typ)
Heat Sink
.030
Pedestal
Solder Mask
.005" Relief
(Typ)
PWB Pad
(8X Typ)
PWB Cutout
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Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
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