MRF448 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF448 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF448/D
The RF Line
NP N S ilic on
M
R
F
4
4
8
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
Minimum Gain = 12 dB
Efficiency = 45%
•
•
Intermodulation Distortion @ 250 W (PEP) —
IMD = –30 dB (Max)
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
100
4.0
16
Collector Current — Continuous
Withstand Current — 10 s
I
C
—
20
Total Device Dissipation @ T = 25°C (1)
P
D
290
Watts
C
Derate above 25°C
1.67
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
0.6
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 200 mAdc, I = 0)
V
(BR)CEO
50
—
—
—
—
—
—
—
—
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 100 mAdc, V = 0)
V
100
100
4.0
C
BE
(BR)CES
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 100 mAdc, I = 0)
V
V
Vdc
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
Vdc
E
C
NOTE:
1. P is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
(continued)
D
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 5.0 Adc, V = 10 Vdc)
h
FE
10
30
—
—
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
350
14
450
—
pF
dB
ob
(V = 50 Vdc, I = 0, f = 1.0 MHz)
CB
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
12
PE
(V = 50 Vdc, P = 250 W CW, f = 30 MHz, I = 250 mA)
CQ
CC
out
Collector Efficiency
(V = 50 Vdc, P = 250 W, f = 30 MHz, I = 250 mA)
CC
η
—
—
45
65
—
—
% (PEP)
% (CW)
out
CQ
Intermodulation Distortion (2)
(V = 50 Vdc, P = 250 W (PEP), I = 250 mA, f = 30 MHz)
IMD
—
–33
–30
dB
CE
out
CQ
Electrical Ruggedness
(V = 50 Vdc, P = 250 W CW, f = 30 MHz,
ψ
No Degradation in Output Power
CC
out
VSWR 3:1 at all Phase Angles)
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
L
5
L
6
R
1
+
+
+
-
+
-
B
I
A
S
5
0
V
d
c
C
R
1
C
3
C
4
C
8
C
9
C
1
0
L
3
-
L
2
D
.
U
.
T
.
L
4
R
F
L
1
O
U
T
P
U
T
R F
IN PU T
C
2
C
5
C
7
R
2
C
1
C
6
C1, C2, C5, C7 — 170ā –ā 780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long
L2 — 0.8 µH, Ohmite Z–235 or equivalent
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10 µF, 100 V
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D.
L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long
R1 — 10 Ω, 10 Watt
L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent
R2 — 10 Ω, 1.0 Watt
Figure 1. 30 MHz Test Circuit Schematic
2
4
3
0
0
0
4
0
0
0
f
I
=
3
0
M
0
H
z
f
I
I
=
3
0
,
3
0.
0
0
1
M
H
z
=
2
5
m A
I
M
D
=
-
ā
0
d
B
C Q
=
2
5
0
m
A
C
Q
V
C C
=
5
0
V
0
3
0
M
D
=
d 3
4
0
V
-
ā
5
d
B
2
1
0
0
0
2
0
0
0
0
1
0
0
0
2
0
4
8
1
2
1
6
2
0
0
3
0
4
0
5
0
6 0
P ,
in
I
NP
U
T
P
O
W
E
R
(
W
A
T
T
S
)
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(V O LTS )
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
4 00
3 50
3 00
2 50
2 00
1 50
2
5
f
I
=
3
0
M
0
H
z
=
2
5
mA
C
Q
2
1
1
0
5
V
=
5
0
V
C
C
T
=
°
C
5
0
C
0
5
0
V
=
5
0
V
C
C
I
=
2
5
0
mA
W
C
Q
P
o ut
=
2
5
0
1
0
0
°
C
2
4
7
1
0
1
5
3
0
1
3
5
1
0
3
0
T
5
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
O
U
T
P
U
V
S
W
R
Figure 4. Power Gain versus Frequency
Figure 5. RF SOAR (Class AB)
P
out versus Output VSWR
2 50
2 00
1 50
1 00
5 0
0
-
-
-
-
-
-
ā
5
0
5
0
5
0
V
=
3
0
V
C
C
V
f
=
5
0
V
C
C
=
3
0
,
3
0
.
0
0
1
M
H
z
1
5
V
d
3
d
5
0
5
1
0
1
5
2
0
2
5
7
5
1
2
5
1
7
5
2
2
5
2
7
5
I
C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
( AM PS )
P
ou t
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
P
E
P
)
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
3
2
1
1
0
5
0
0
0
0
0
0
0
C
P
V
=
5
0
V
C
C
I
=
2
5
0
mA
W
C
Q
6
2
8
4
0
4
0
0
P
ou t
=
2
5
0
P
E
P
3
2
1
0
0
0
0
0
R
P
0
0
1
.
5
2
4
7
1
0
1
5
2
0
3 0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 8. Output Resistance and Capacitance
versus Frequency
V
=
5
0
V
mA
C
C
3
0
I
=
1
5
0
C
Q
P
ou t
=
2
5
0
W
P
E
P
1
5
f
Z
i n
O h ms
Z
=
Ω
1
0
7
.
0
o
M
H
z
2
4
7
.
.
.
0
4
3
1
0
0
.
.
.
.
.
50
10
70
80
60
-
j
j
j
j
j
1
1
1
1
0
.
40
80
75
25
75
4
.
0
0
0
-
-
-
-
.
.
.
.
1
3
5
f
=
2
.
0
M
H
z
0
Figure 9. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
A
U
N O TE S :
.
1
D
I
M
.
N
E
5
T
N
M
R
S
,
O
I
O
N
I
N
G
198 2.
A
N
D
T
O
L
E
R
A
N
C
I
N
G
P
E
R
A
N
S
I
Y
1
4
M
2
.
C
O
L
L
I
N
G
D
I
M
E
N
S
I
O
N
:
I N CH .
1
INCHES
MILLIMETERS
MIN MAX
M
Q
DIM MIN
MAX
4
A
B
C
D
E
H
J
0
0
0
0
0
0
0
0
.
.
.
.
.
.
.
.
9
4
2
2
0
1
0
4
6
6
2
1
8
4
0
3
0
5
9
6
4
4
3
5
0
0
0
0
0. 11
0
0
.
.
.
.
9
5
2
2
9
1
7
3
0
0
5
5
0
8
7
-
2
4
. 39
. 82
. 82
. 49
. 14
. 66
. 08
. 05
2
5
2
6
5
2
4
0
.
.
.
.
.
.
.
14
95
98
96
79
52
17
--
1
1
1
R
5
5
2
3
0
B
.
.
1
0
-
7
0
-
2
3
K
M
Q
R
U
1
1
-
D
4
1
4
2
5
ꢀ
ꢀ
ꢀ
N
O
0
0
0
M
4
5
ꢀ
ꢀ
ꢀ
N
O
M
_
_
K
0
.
2
7
1
5
6
0
.
.
.
1
2
7
30
55
30
2
6
8
. 9
. 2
. 2
3
5
9
3.
6.
8.
30
47
54
0
0
.
.
1
1
J
S
T
Y
L
E
1
:
P
I
N
1
B
E
.
E
M
AS E
I
T
T
E
R
C
H
2
3
4
.
.
.
E
SEATING
PLANE
M
I
T
T
E
C
R
C
O
L
L
E
T
O
R
CASE 211–11
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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