MRF454 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF454 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF454/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
•
Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 80 Watts
80 W, 30 MHz
Minimum Gain = 12 dB
Efficiency = 50%
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
25
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
45
4.0
20
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
250
1.43
Watts
W/°C
C
Storage Temperature Range
T
stg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
0.7
°C/W
CASE 211–11, STYLE 1
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 100 mAdc, I = 0)
V
(BR)CEO
18
36
—
—
—
—
—
—
Vdc
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 50 mAdc, V
= 0)
V
C
BE
(BR)CES
(BR)EBO
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
4.0
E
C
ON CHARACTERISTICS
DC Current Gain (I = 5.0 Adc, V
CE
= 5.0 Vdc)
h
40
—
—
—
150
250
—
C
FE
DYNAMIC CHARACTERISTICS
Output Capacitance (V
CB
= 15 Vdc, I = 0, f = 1.0 MHz)
C
pF
E
ob
pe
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
12
50
—
—
—
—
—
—
—
—
—
—
—
dB
%
(V
CC
= 12.5 Vdc, P
= 80 W, f = 30 MHz)
out
Collector Efficiency
(V = 12.5 Vdc, P
η
—
= 80 W, f = 30 MHz)
CC
out
Series Equivalent Input Impedance
(V = 12.5 Vdc, P = 80 W, f = 30 MHz)
Z
.938–j.341
1.16–j.201
Ohms
Ohms
—
in
CC
Series Equivalent Output Impedance
(V = 12.5 Vdc, P = 80 W, f = 30 MHz)
out
Z
out
CC
Parallel Equivalent Input Impedance
(V = 12.5 Vdc, P = 80 W, f = 30 MHz)
out
—
—
1.06 Ω
1817 pF
CC
Parallel Equivalent Output Impedance
(V = 12.5 Vdc, P = 80 W, f = 30 MHz)
out
1.19 Ω
777 pF
—
CC
out
REV 1
Motorola, Inc. 1997
L5
+
C5
C6
C7
C8
12.5 Vdc
–
L3
RF OUTPUT
DUT
C4
C1
L1
RF INPUT
L4
C3
L2
R1
C2
C1, C2, C4 — ARCO 469
C3 — ARCO 466
L1 — 3 Turns, #18 AWG, 5/16″ I.D., 5/16″ Long
L2 — VK200–20/4B, FERROXCUBE
C5 — 1000 pF, UNELCO
C6, C7 — 0.1 µF Disc Ceramic
C8 — 1000 µF/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4″ I.D., Close Wound
L4 — 3 Turns 1/8″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
120
105
90
120
105
90
V
CC
= 13.6 V
P
= 5 V
in
3.5 W
12.5 V
75
75
1.75 W
60
60
45
45
30
30
15
15
f = 30 MHz
f = 30 MHz
0
0
9
10
17
18
0
1
2
3
4
5
6
7
8
8
9
10
11
12
13
14
15
16
P
, INPUT POWER (WATTS)
V
, SUPPLY VOLTAGE (VOLTS)
in
CC
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
MRF454
2
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
INCHES
MIN
MILLIMETERS
M
Q
DIM
A
B
C
D
E
H
J
K
MAX
0.990
0.510
0.275
0.235
0.110
0.178
0.007
–––
MIN
24.39
11.82
5.82
5.49
2.14
3.66
0.08
11.05
MAX
25.14
12.95
6.98
5.96
2.79
4.52
0.17
–––
4
0.960
0.465
0.229
0.216
0.084
0.144
0.003
0.435
R
B
2
3
D
M
Q
R
45 NOM
45 NOM
K
0.115
0.246
0.720
0.130
0.255
0.730
2.93
6.25
3.30
6.47
U
18.29
18.54
J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
C
H
E
SEATING
PLANE
CASE 211–11
ISSUE N
MOTOROLA RF DEVICE DATA
MRF454
3
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF454/D
◊
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