MRF455 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF455 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MRF455/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
•
Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 60 Watts
60 W, 30 MHz
Minimum Gain = 13 dB
Efficiency = 55%
RF POWER
TRANSISTOR
NPN SILICON
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring h
at the
FE
ranges
data sheet conditions and color coding the device to predetermined h
FE
within the normal h limits. A color dot is added to the marking on top of the cap.
FE
Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
18
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
36
CES
EBO
V
4.0
15
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
175
1.0
Watts
W/°C
C
CASE 211–07, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
1.0
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 100 mAdc, I = 0)
V
18
36
—
—
—
—
—
—
Vdc
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, V = 0)
V
(BR)CES
C
BE
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
4.0
(BR)EBO
E
C
ON CHARACTERISTICS
DC Current Gain
(I = 5.0 Adc, V
C CE
h
10
—
—
—
150
250
—
FE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
ob
(V
CB
= 12.5 Vdc, I = 0, f = 1.0 MHz)
E
(continued)
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
13
55
—
—
—
—
—
—
—
—
—
—
—
dB
%
pe
(V
CC
= 12.5 Vdc, P
= 60 W, f = 30 MHz)
out
Collector Efficiency
(V = 12.5 Vdc, P
η
—
= 60 W, f = 30 MHz)
CC
out
Series Equivalent Input Impedance
(V = 12.5 Vdc, P = 60 W, f = 30 MHz)
Z
1.66–j.844
1.73–j.188
2.09/1030
1.75/330
Ohms
Ohms
Ω/pF
Ω/pF
in
CC out
Series Equivalent Output Impedance
(V = 12.5 Vdc, P = 60 W, f = 30 MHz)
Z
out
CC out
Parallel Equivalent Input Impedance
(V = 12.5 Vdc, P = 60 W, f = 30 MHz)
Z
in
CC out
Parallel Equivalent Output Impedance
(V = 12.5 Vdc, P = 60 W, f = 30 MHz)
Z
out
CC out
L5
+
C5
C6
C7
C8
12.5 Vdc
–
L3
RF OUTPUT
DUT
C4
C1
L1
RF INPUT
L4
C3
C2
L2
R1
C1, C2, C4 — ARCO 469
C3 — ARCO 466
L1 — 3 Turns, #18 AWG, 5/16″ I.D., 5/16″ Long
L2 — VK200–20/4B, FERROXCUBE
C5 — 1000 pF, UNELCO
C6, C7 — 0.1 µF Disc Ceramic
C8 — 1000 µF/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4″ I.D., Close Wound
L4 — 3 Turns 1/8″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
80
70
60
50
40
30
20
10
90
V
= 13.6 V
P
= 3.5 V
CC
in
f = 30 MHz
80
70
60
50
40
30
20
10
f = 30 MHz
12.5 V
1.75 W
1 W
0
0
4.5
5
17
18
0.5
1
1.5
2
2.5
3
3.5
4
8
9
10
11
12
13
14
15
16
P
, INPUT POWER (WATTS)
V , SUPPLY VOLTAGE (VOLTS)
CC
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF455
2
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
M
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
Q
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
E
MAX
0.990
0.390
0.281
0.235
0.105
0.108
0.006
0.405
50
MIN
24.39
9.40
5.82
5.47
2.16
3.81
0.11
MAX
25.14
9.90
7.13
5.96
2.66
4.57
0.15
10.28
50
4
0.960
0.370
0.229
0.215
0.085
0.150
0.004
0.395
40
B
R
2
3
H
J
D
K
M
Q
R
S
10.04
40
S
K
0.113
0.245
0.790
0.720
0.130
0.255
0.810
0.730
2.88
6.23
20.07
18.29
3.30
6.47
20.57
18.54
U
STYLE 1:
PIN 1. EMITTER
2. BASE
J
3. EMITTER
4. COLLECTOR
C
H
E
SEATING
PLANE
CASE 211–07
ISSUE N
MOTOROLA RF DEVICE DATA
MRF455
3
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF455/D
◊
©2020 ICPDF网 联系我们和版权申明