MRF450A [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF450A |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF450A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF450A is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
PACKAGE STYLE .500" 4L STUD
A
45°
FEATURES INCLUDE:
1
• POUT = 50 W
• PG = 11 dB Min. @ 30MHz & 50W
• Efficiency 50%
3
4
B
ØC
2
D
J
E
SEATING
PLANE
MAXIMUM RATINGS
F
I
7.5 A
40 V
IC
#10-32 UNF
H
G
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
20 V
1.010 / 25.65
.220 / 5.59
.495 / 12.57
.003 / 0.08
.160 / 4.06
1.050 / 26.67
.230 / 5.84
.505 / 12.83
.007 / 0.18
.180 / 4.57
A
B
C
D
E
F
G
H
I
4.0 V
115 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.53 °C/W
.622 / 15.80
.720 / 18.29
.100 / 2.54
.130 / 3.31
.415 / 10.54
.425 / 10.80
TSTG
θJC
.250 / 6.35
.290 / 7.37
J
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 100 mA
IC = 20 mA
IE = 10 mA
40
20
40
4.0
10
V
BVCEO
BVCBO
BVEBO
hFE
V
V
V
V
CE = 5.0 V
CB = 15 V
IC = 1.0 A
---
pF
dB
%
V
f = 1.0 MHz
f = 30 MHz
200
COB
VCC = 13.6
POUT = 50 W
11
50
15
GPE
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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