MRF16006 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF16006 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF16006/D
The RF Line
NP N S ilic on
M
R
F
1
6
0
0
6
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
•
Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 6 Watts
Minimum Gain = 7.4 dB, @ 6 Watts
Minimum Efficiency = 40% @ 6 Watts
•
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
•
•
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
CASE 395C–01, STYLE 2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
60
Unit
Vdc
Vdc
Adc
V
CES
V
EBO
4.0
Collector–Current
I
C
1.0
Total Device Dissipation @ T = 25°C
P
D
26
Watts
C
Derate above 25°C
0.15
W/°C
Storage Temperature Range
T
–65 to +150
6.8
°C
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2)
R
°C/W
θ
JC
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CES
(BR)CBO
(BR)EBO
(I = 40 mAdc, V = 0)
55
55
4.0
—
—
—
—
—
—
—
C
BE
Collector–Base Breakdown Voltage
(I = 40 mAdc, I = 0)
V
V
C
E
Emitter–Base Breakdown Voltage
(I = 2.5 mAdc, I = 0)
Vdc
—
E
C
Collector Cutoff Current
I
mAdc
CES
(VCE = 28 Vdc, V = 0)
2.5
BE
ON CHARACTERISTICS
DC Current Gain
h
—
pf
FE
(I = 0.2 Adc, V = 5.0 Vdc)
CE
20
11
—
—
80
—
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
G
ob
(V = 28 Vdc, f = 1.0 MHz)
CB
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
dB
%
pe
(V = 28 Vdc, P = 6 Watts, f = 1600/1640 MHz)
CC
7.4
40
—
—
45
—
—
—
out
Collector Efficiency
η
(V = 28 Vdc, P = 6 Watts, f = 1600/1640 MHz)
CC
out
Return Loss
I
RL
dB
(V = 28 Vdc, P = 6 Watts, f = 1600/1640 MHz)
CC
8.0
out
Output Mismatch Stress
(V = 28 Vdc, P = 6 Watts, f = 1600 MHz, Load
ψ
No Degradation in Output Power
CC
out
VSWR = 3:1 all phase angles at frequency of test)
REV 2
2
L
3
1
B
1
28
V
d
c
R
L
2
C
1
C
2
C
3
C 4
L
1
C
5
Board Material – Teflon Glass Laminate Dielectric
Thickness – 0.30″, ε = 2.55″, 2.0 oz. Copper
r
B1
Fair Rite Bead on #24 Wire
C4
47 µF, 50 V, Electrolytic Cap
C1, C5 100 pF, B Case, ATC Chip Cap
L1, L2
L3
R1
3 Turns, #18, 0.133″ ID, 0.15″ Long
9 Turns, #24 Enamel
82 Ω, 1.0 W, Carbon Resistor
C2
C3
0.1 µF, Dipped Mica Cap
0.1 µF, Chip Cap
Figure 1. MRF16006 Test Fixture Schematic
Z
i
n
f
=
1
.
5
G Hz
1
.
7
G
H
z
1
.
6
G Hz
Z
= Ω
1
0
o
1
.
7
G
H
z
1
.
6
f
G
=
H
z
Z
*
O L
1
.
5
G Hz
V
C C
=
2
8
V dc,
o ut
=
P
6
W
f
Z
in
Z
OL
*
MHz
1500
1600
1700
Ohms
Ohms
Z
*
=
C
o
n
j
u
g
a
t
e
o
f
t
h
e
o
p
t
i
m
u
m
l
o
a
d
i
m
p
e
d
a
n
c
e
i
n
t
o
w
fr eq u e n cy.
h
i
c
h
t
h
e
d e vic e
O L
6.28 + j 8.53
7.04 + j 9.00
9.55 + j 12.86
1.22 – j 1.37
1.58 – j 0.53
1.71 + j 0.39
o
u
t
p
u
t
o
p
e
r
a
t
e
s
a
t
a
g
i
v
e
n
o
u
t
p
u
t
p
o
w
e
r,
v
o
l
t
a
g
e
a
n
d
Figure 2. Series Equivalent Input/Output Impedance
REV 2
3
1
2
0
8
6
1
f
=
1
.
6
G Hz
1
.6
4
G Hz
V
=
5
2
8
V dc
4
C
C
2
0
0
.
2
5
0
.
4
5
0
.
65
0
.8
5
1
.
0
5
1
.
2
1
.
4
5
P ,
i n
I
N
P
U
T
P
O
WE
R
(WATTS )
Figure 3. Output Power versus Input Power
REV 2
4
PACKAGE DIMENSIONS
–A–
U
Q 2 PL
1
M
M
M
B
0
.5
1
ꢀ
(
0
.
02
0
)
T
A
N O TE S :
1. D I MEN S IO N I N G A ND TO LE R AN C IN G PE R AN S I
Y 14. 5M, 198 2.
2
.
C
O
N
T
R
O
L
L
I
N
G
D
I
M
E
N
S
I
O
N
:
I
N
C
H
.
–B–
INCHES
DIM MIN MAX
MILLIMETERS
MIN
18. 77
6. 10
4. 19
5. 46
1. 40
2. 01
0. 10
5. 33
8. 00
3. 18
MAX
19 .0 5
6.6 0
5.0 3
5.7 2
1.7 8
2.3 1
0.1 5
6.1 0
8.3 8
3.4 2
3
A
B
C
D
E
H
J
0. 739
0. 240
0. 165
0. 215
0. 055
0. 079
0. 004
0. 210
0. 315
0. 125
0. 750
0. 260
0. 198
0. 225
0. 070
0. 091
0. 006
0. 240
0. 330
0. 135
K
2
K
N
Q
U
S TY LE 2:
P IN 1. E MIT T ER
D
N
2. C O LLE C TO R
3. B AS E
0. 560 ꢀB SC
14. 23 ꢀB SC
E
J
C
H
SEATING
PLANE
–T–
CASE 395C–01
ISSUE A
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 2
5
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