MA4VAT900-1277T [TE]

HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz; HMIC PIN二极管可变衰减器0.80-1.0 GHz的
MA4VAT900-1277T
型号: MA4VAT900-1277T
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz
HMIC PIN二极管可变衰减器0.80-1.0 GHz的

二极管 衰减器
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HMIC PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT900-1277T  
V2  
Features  
MLP 3mm Package—Circuit Side View  
·
·
·
·
·
·
·
Bandwidth: 0.80 GHz to 1.00 GHz  
<1.0 dB Insertion Loss, Typical  
1.4:1 VSWR, Typical  
24 dB Attenuation, Typical  
40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )  
0-1.8 Volt Control Voltage.  
User can add an External Resistor for higher  
voltage requirements.  
·
RoHs Compliant  
PIN 1  
PIN 16  
Extra Features  
·
·
·
·
Usable Bandwidth: 0.60 GHz to 2.00 GHz  
1.9 dB Insertion Loss, Max  
2:1 VSWR, Max  
PIN Configuration  
20 dB Attenuation, Max  
PIN  
1
Function  
GND  
GND  
GND  
GND  
GND  
RF2  
PIN  
Function  
DC2  
9
Description and Applications  
M/A-COM’s MA4VAT900-1277T is  
MONLITHIC PIN Diode Variable Attenuator which  
utilizes an integrated 90 degree 3dB hybrid with a  
pair of Silicon PIN Diodes to perform the required  
attenuation function as Voltage (Current) is applied.  
10  
11  
12  
13  
14  
15  
16  
GND  
GND  
DC1  
2
a
HMIC  
3
4
5
GND  
GND  
RF1  
6
This device operates from 0 to 2 Volts at 330 uA  
typical control current for maximum attenuation. The  
user can add external biasing resistors to the bias  
ports for higher voltage requirements as required.  
7
GND  
GND  
8
GND  
Center Paddle is RF and D.C. Ground  
Note: RF Input & RF Output Ports are Functionally Symmetrical  
M/A-COM’s MA4VAT900-1277T PIN Diode Variable  
Attenuator is designed for AGC Circuit Applications  
requiring:  
Absolute Maximum Ratings @ +25 °C  
·
·
·
Lower Insertion Loss  
Lower distortion through attenuation  
Larger dynamic range for wide spread spectrum  
applications  
Parameter  
Maximum Ratings  
Operating Temperature  
-40 °C to +85 °C  
Storage Temperature  
Junction Temperature  
RF C.W. Incident Power  
Reversed Current @ -30 V  
Control Current  
-65 °C to +150 °C  
+175 °C  
+33 dBm C.W.  
50nA  
5 mA per Diode  
Notes:  
1. All the above values are at +25 °C, unless otherwise noted.  
2. Exceeding these limits may cause permanent damage.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
HMIC PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT900-1277T  
V2  
Electrical Specifications @ +25 °C  
Parameter  
Frequency Band  
Unit  
Min  
Typ  
Max  
No DC Bias RF Parameter  
Insertion Loss  
0.80 GHz—1.00 GHz  
dB  
dB  
-
1.0  
1.2  
Input Return Loss  
Output Return Loss  
P1dB  
11  
11  
30  
37  
-
14  
-
-
-
-
-
dB  
14  
33  
dBm  
dBm  
V
IIP3  
40  
Control Voltage  
0 V @ 0uA  
DC Bias RF Parameter  
Maximum Attenuation  
0.80 GHz—1.00 GHz  
dB  
dB  
21  
17  
17  
15  
-
24  
-
-
-
-
-
Input Return Loss @ Max Attenuation  
Output Return Loss @ Max Attenuation  
Input IP3  
20  
dB  
20  
18  
dBm  
V
Control Voltage @ Max Attenuation  
1.80 V @ 330 uA  
Typical RF Performance Over Industry Designated RF Frequency Bands  
Band  
Freq  
I. Loss  
Att.  
R. Loss  
IIP3  
Phase  
-Relative-  
(MHz)  
(dB)  
0.9  
(dB)  
24  
(dB)  
13  
(dBm)  
40  
(Degree)  
-15°  
AMPS  
GSM  
RX  
TX  
824-849  
869-894  
0.9  
24  
13  
40  
RX  
TX  
880-915  
925-960  
1.1  
1.1  
21  
21  
11  
11  
40  
40  
-15°  
Notes:  
1. All are typical values only.  
2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer  
to the plots below)  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
HMIC PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT900-1277T  
V2  
Plots of Typical RF Characteristics @ +25 °C  
Typical Insertion Loss & Attenuation Plot  
Typical Attenuation vs Voltage Plot (@900 MHz)  
Typical Attenuation vs Volatge for MA4VAT900-1277  
Typical Insertion Loss & Attenuation for MA4VAT900-1277  
0
-5  
30  
25  
20  
15  
10  
5
-10  
-15  
-20  
-25  
-30  
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0  
0
Frequency (GHz)  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
Voltage Applied (V)  
0V/0uA  
0.76V/49uA  
1.05V/125uA  
1.30V/185uA  
1.50V/240uA  
1.80V/330uA  
Typical IIP3 vs Attenuation Plot  
Typical Return Loss @ All Attenuation Levels Plot  
Typical Return Loss at Attenuation levels for MA4VAT900-1277  
Typical IP3 vs Attenuation for MA4VAT900-1277  
0
-5  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
0
3
6
9
12  
15  
18  
21  
24  
27  
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0  
Attenuation (dB)  
Frequency (GHz)  
800Mhz  
900MHz  
1000MHz  
0V/0uA  
0.76V/49uA  
1.05V125uA  
1.30V185uA  
1.50V/240uA  
1.80V330uA  
Typical Relative Phase Shift Per Attenuation (Voltage) Plot  
Typical Relative phase shift vs Frequency per Voltage (Attenuation)  
for MA4VAT900-1277  
For Reference ONLY:  
0
With 0 W External Bias Resistor, the following are  
Approximate Values:  
-20  
-40  
·
·
·
·
·
·
Insertion Loss  
= 0 V @ 0 uA  
5dB Attenuation  
= 0.76 V @ 49 uA  
-60  
10dB Attenuation = 1.05 V @ 125uA  
15dB Attenuation = 1.30 V @ 185 uA  
20dB Anttenuation = 1.50 V @ 240 uA  
-80  
-100  
-120  
Max Attenuation  
= 1.8 V @ 330 uA  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Frequency (GHz)  
0V  
0.76V  
1.05V  
1.30V  
1.50V  
1.80V  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
HMIC PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT900-1277T  
V2  
Package PIN Designation, External Components, and Equivalent Circuit  
RF in/out  
Cblock  
Cblock =10pF  
Cbias = 10pF  
Rexternal = 0 -Ohms  
Cbias  
Rbias  
INPUT  
Control Current  
Cbias  
GND  
Paddle  
Cblock  
RF out/in  
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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