MA4VAT907-1061T [TE]

High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz; 高IIP3 PIN二极管可变衰减器0.80-1.0 GHz的
MA4VAT907-1061T
型号: MA4VAT907-1061T
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
高IIP3 PIN二极管可变衰减器0.80-1.0 GHz的

二极管 射频 微波 衰减器
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High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT907-1061T  
V3  
Features  
·
·
·
·
·
Bandwidth: 0.80 GHz to 1.0 GHz  
1.0 dB Insertion Loss, Typical  
12 dB Return Loss, Typical  
25 dB Attenuation, Typical  
50 dBm Input IP3, Typical (1MHz Offset,  
@+0dBm Pinc)  
·
·
0 – 3.0 Volts Control Voltage @3.3mA Typical  
RoHs Compliant  
Extra Features  
·
Covers the following Bands:  
·
·
GSM  
AMPS  
SOIC-8 PIN Configuration (Topview)  
·
·
·
·
Usable Bandwidth: 0.60 GHz to 1.20 GHz  
1.5 dB Insertion Loss, Typical  
1.8:1 VSWR, Typical  
PIN  
1
Function  
DC1  
Comments  
18.5 dB Attenuation, Typical  
2
GND  
Description and Applications  
3
GND  
M/A-COM’s MA4VAT907-1061T is a HMIC PIN Diode  
Variable Attenuator which utilizes an integrated 90  
degree 3dB hybrid with a pair of Silicon PIN Diodes  
to perform the required attenuation function as D.C.  
Voltage (Current) is applied.  
4
RFin/out  
RFout/in  
GND  
Symetrical as RF Input/Ouput  
Symetrical as RF Input/Ouput  
5
6
7
GND  
This device operates from 0 to 2.77Volts at 3.0mA  
typical control current for maximum attenuation. The  
user can add external biasing resistors to the bias  
ports for higher voltage requirements as required.  
8
DC2  
Absolute Maximum Ratings  
@ +25 °C  
M/A-COM’s MA4VAT907-1061T PIN Diode Variable  
Attenuator is designed for AGC Circuit Applications  
requiring:  
Parameter  
Maximum Ratings  
Operating Temperature  
-40 °C to +85 °C  
·
·
·
Lower Insertion Loss  
Lower distortion through attenuation  
Larger dynamic range for wide spread spectrum  
applications  
Storage Temperature  
Junction Temperature  
RF C.W. Incident Power  
Reversed Current @ -30 V  
Control Current  
-65 °C to +150 °C  
+175 °C  
+33 dBm C.W.  
50nA  
50 mA per Diode  
Notes:  
1. All the above values are at +25 °C, unless otherwise noted.  
2. Exceeding these limits may cause permanent damage.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT907-1061T  
V3  
Electrical Specifications @ +25 °C  
Parameter  
Frequency Band  
Unit  
Min  
Typ  
Max  
Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)  
Insertion Loss  
Input Return Loss  
Output Return Loss  
P1dB  
0.80 GHz—1.00 GHz  
dB  
dB  
-
1.0  
1.2  
11  
11  
30  
45  
-
12  
-
-
-
-
-
dB  
12  
dBm  
dBm  
V
-
49  
Input IP3  
Control Voltage  
0 V @ OuA  
Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)  
Maximum Attenuation  
Input Return Loss @ Max Attenuation  
Output Return Loss @ Max Attenuation  
Input IP3  
0.80 GHz—1.00 GHz  
dB  
dB  
18.5  
15  
15  
36  
-
24  
-
-
-
-
-
21  
dB  
21  
39  
dBm  
V
Control Voltage @ Max Attenuation  
3.0 V @ 3.35 mA  
Typical RF Performance Over Industry Designated RF Frequency Bands  
Band  
Freq  
I. Loss  
Att.  
R. Loss  
IIP3  
Phase  
-Relative-  
(MHz)  
(dB)  
0.9  
(dB)  
22  
(dB)  
12  
(dBm)  
50  
(Degree)  
AMPS  
GSM  
RX  
TX  
824-849  
869-894  
-15°  
0.9  
22  
12  
50  
RX  
TX  
880-915  
925-960  
1.2  
1.2  
20  
20  
11  
11  
50  
50  
-20°  
Notes:  
1. All are typical values only.  
2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer  
to the plots below)  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT907-1061T  
V3  
Plots of Typical RF Characteristics @ +25 °C  
Typical Insertion Loss & Attenuation Plot  
Typical Attenuation vs Voltage  
MA4VAT907-1061  
Attenuation vs Control Voltage  
MA4VAT907-1061  
Typical Attenuation  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
0.600  
0.700  
0.800  
0.900  
1.000  
1.100  
1.200  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Frequency (GHz)  
Bias Voltage (V)  
0V/0mA  
1V/0.55mA  
1.28V/0.90mA  
1.87V/1.72mA  
2.33V/2.37mA  
2.75V/2.95mA  
3.0V/3.35mA  
800MHz  
900MHz  
1000MHz  
Typical IIP3 vs Attenuation Plot  
Typical Return Loss @ All Attenuation Levels Plot  
MA4VAT907-1061  
Typical Input Return Loss  
MA4VAT907-1061  
Typical IP3 vs Bias Voltage @900MHz  
(1MHz Offset, +10dBm Pin)  
0
-5  
70  
60  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.600  
0.700  
0.800  
0.900  
1.000  
1.100  
1.200  
Bias Voltage (V)  
Frequency (GHz)  
Typical Relative Phase Shift Per Attenuation (Voltage) Plot  
MA4VAT907-1061  
Relaive Phase vs Control Voltage  
For Reference ONLY:  
90  
70  
·
·
·
·
·
·
Insertion Loss  
5dB Attenuation  
= 0.00 V @ 0.00 mA  
= 1.30 V @ 0.95 mA  
50  
10dB Attenuation = 1.94 V @ 1.78 mA  
15dB Attenuation = 2.36 V @ 2.42 mA  
20dB Anttenuation = 2.67 V @ 2.90 mA  
30  
10  
-10  
-30  
-50  
-70  
-90  
Max Attenuation  
= 2.77 V @ 3.00 mA  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Bias Voltage (V)  
800MHz  
900MHz  
1000MHz  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
High IIP3 PIN Diode Variable Attenuator  
0.80-1.0 GHz  
MA4VAT907-1061T  
V3  
Package PIN Designation, External Components, and Equivalent Circuit  
Cbias  
RF IN/OUT  
Lbias  
Cblock  
Control Current  
Rbias  
Cblock  
Lbias  
Cbias  
RF OUT/IN  
External Bias Components  
Rbias= 680 Ohms ( 3.0 V @ 3.5 mA )  
Lbias= 150 nH  
Cbias =100 pF  
Cblock =100 pF  
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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