MA4X160A [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA4X160A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA4X160A
Silicon epitaxial planar type
Unit : mm
2.8 −+ 00..32
For switching circuits
0.65 0.15
1.5 −+ 00..2055
0.65 0.15
I Features
0.5 R
4
3
1
2
•
Two isolated elements contained in one package, allowing high-
density mounting
•
Centrosymmetrical wiring, allowing to free from the taping
direction
•
•
Short reverse recovery time trr
Small terminal capacitance, Ct
0.1 to 0.3
0.4 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VR
Rating
80
Unit
V
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Reverse voltage (DC)
Repetitive peak reverse voltage
VRRM
IF(AV)
IF(AV)
IFRM
IFRM
IFSM
IFSM
Tj
80
V
Reverse voltage
(DC)
Single
Double
Single
Double
Single
Double
100
mA
Mini Type Package (4-pin)
75
mA/Unit
mA
Marking Symbol: M1E
Internal Connection
225
Repetitive peak
forward current
170
mA/Unit
mA
500
Non-repetitive peak
forward surge current
*
375
mA/Unit
°C
4
3
1
2
Junction temperature
Storage temperature
150
Tstg
−55 to +150
°C
Note)
* : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
Conditions
Min
80
Typ
0.95
0.9
Max
0.1
Unit
µA
V
VR = 75 V
VF
IF = 100 mA
1.2
VR
IR = 100 µA
V
Ct
VR = 0 V, f = 1 MHz
2
3
pF
ns
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 · IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
1
MA4X160A
Switching Diodes
VF Ta
IF VF
IR VR
2
3
10
10
1.2
1.0
0.8
0.6
0.4
0.2
0
2
10
10
IF = 100 mA
Ta = 125°C
1
10
1
75°C
10 mA
3 mA
1 mA
Ta = 125°C
75°C
−1
10
25°C
25°C
−2
−3
0.1 mA
−1
− 20°C
10
10
10
−2
10
0
20
40
60
80
100 120
0
0.2
0.4
0.6
0.8
1.0
1.2
−40
0
40
80
120 160
(
)
(
)
Reverse voltage VR
V
(
)
Forward voltage VF
V
Ambient temperature Ta °C
IF Ta
Ct VR
IF(surge) tW
2
10
1 000
10
f = 1 MHz
Ta = 25°C
Ta = 25°C
IF(surge)
300
100
5
tW
Non repetitive
10
3
2
VR = 80 V
40 V
30
10
1
1
−1
10
3
1
0.5
0.3
0.2
−2
−3
10
10
0.3
0.1
0.1
0
10
20
30
40
50
60
0.03 0.1 0.3
)
Pulse width tW ms
1
3
10
30
−40
0
40
80
120 160
(
)
Reverse voltage VR
V
(
)
(
Ambient temperature Ta °C
2
相关型号：
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Rectifier Diode, 2 Element, 0.1A, 250V V(RRM), Silicon, ROHS COMPLIANT, MINI4-G3, 4 PIN
PANASONIC
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